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Электронный компонент: BTD5510F3

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CYStech Electronics Corp.

Spec. No. : C658F3
Issued Date : 2005.08.23
Revised Date :
Page No. : 1/5
BTD5510F3
CYStek Product Specification


NPN Epitaxial Planar Transistor
BTD5510F3
Description
The BTD5510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed
switching application.

Features:
High BV
CEO
Low V
CE(SAT)
High current gain
Monolithic construction with built-in base-emitter shunt resistors
Pb-free package
Equivalent Circuit Outline












3
TO-263-3L

BTD5510F3
BBase
CCollector
EEmitter
B
C
E
B C E
CYStech Electronics Corp.

Spec. No. : C658F3
Issued Date : 2005.08.23
Revised Date :
Page No. : 2/5
BTD5510F3
CYStek Product Specification


Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
V
CBO
250
V
Collector-Emitter Voltage
V
CEO
250
V
Emitter-Base Voltage
V
EBO
10
V
Collector Current
I
C
15
A
Pd(T
A
=25)
2
Power Dissipation
Pd(T
C
=25)
60
W
Thermal Resistance, Junction to Ambient
R
JA
62.5
C/W
Thermal Resistance, Junction to Case
R
JC
2.08
C/W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
Note : *1. Single Pulse Pw=100ms
Characteristics
(Ta=25
C)
Symbol Min. Typ. Max. Unit
Test
Conditions
BV
CBO
250 - - V
I
C
=100A, I
E
=0
BV
CEO
250 - - V
I
C
=1mA, I
B
=0
I
CEO
- -
100
A
V
CE
=250V, I
E
=0
I
CBO
- -
100
A
V
CB
=250V, I
E
=0
I
EBO
- - 5
mA
V
EB
=5V, I
C
=0
*V
CE(sat)
1 - - 780 mV
I
C
=200mA, I
B
=300uA
*V
CE(sat)
2
-
-
1.4
V
I
C
=10A, I
B
=250mA
*V
CE(sat)
3
-
-
1.3
V
I
C
=7A, I
B
=50mA
*V
CE(sat)
4
-
-
1.2
V
I
C
=5A, I
B
=20mA
*V
CE(sat)
5
-
-
1.1
V
I
C
=4A, I
B
=5mA
*V
BE(sat)
-
-
2
V
I
C
=8A, I
B
=15mA
*V
BE(on)
-
-
1.8
V
V
CE
=4V, I
C
=8A
*h
FE
1000
- - -
V
CE
=10V, I
C
=5A
*Pulse Test : Pulse Width
380s, Duty Cycle
2%













CYStech Electronics Corp.

Spec. No. : C658F3
Issued Date : 2005.08.23
Revised Date :
Page No. : 3/5
BTD5510F3
CYStek Product Specification


Characteristic Curves
Current Gain vs Collector Current
100
1000
10000
100000
1
10
100
1000
10000
100000
Collector Current---IC(mA)
Current Gain---
HFE
HFE
VCE=4V
VCE=2V
Saturation Voltage vs Collector Current
100
1000
10000
1
10
100
1000
10000
100000
Collector Current ---IC(mA)
Saturation Voltage---(mV)
VCE(SAT)@IC=1000IB
Saturation Voltage vs Collector Current
100
1000
10000
1
10
100
1000
10000
100000
Collector Current ---IC(mA)
Saturation Voltage---(mV)
VCE(SAT)@IC=250IB
Saturation Voltage vs Collector Current
100
1000
10000
1
10
100
1000
10000
100000
Collector Current ---IC(mA)
Saturation Voltage---(mV)
VCE(SAT)@IC=500IB
Saturation Voltage vs Collector Current
100
1000
10000
10
100
1000
10000
100000
Collector Current ---IC(mA)
Saturation Voltage---(mV)
VBE(SAT)@IC=250IB
ON Voltage vs Collector Current
100
1000
10000
10
100
1000
10000
100000
Collector Current ---IC(mA)
ON Voltage --- (mV)
VBE(ON)@VCE=4V


CYStech Electronics Corp.

Spec. No. : C658F3
Issued Date : 2005.08.23
Revised Date :
Page No. : 4/5
BTD5510F3
CYStek Product Specification


Characteristic Curves(Cont.)
Power Derating Curve
0
0.5
1
1.5
2
2.5
0
50
100
150
200
Ambient Temperature ---TA( )
Power Dissipation---PD(W)
Power Derating Curve
0
10
20
30
40
50
60
70
0
50
100
150
200
Case Temperature ---TC( )
Pow
e
r
D
issipa
tion---PD
(W)
CYStech Electronics Corp.

Spec. No. : C658F3
Issued Date : 2005.08.23
Revised Date :
Page No. : 5/5
BTD5510F3
CYStek Product Specification


TO-263 Dimension
*:Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.3800
0.4050 9.65 10.29 I 0.0500
0.0700 1.27 1.78
B 0.3300
0.3700 8.38 9.40 J
- *0.1000 - *2.54
C - 0.0550 - 1.40 K
0.0450
0.0550
1.14 1.40
D 0.5750
0.6250 14.61 15.88 L 0.0200
0.0390 0.51 0.99
E 0.1600
0.1900 4.06 4.83
1
- - 6
8
F 0.0450
0.0550 1.14 1.40
2
- - 6
8
G 0.0900
0.1100 2.29 2.79
3
- - 0
5
H
0.0180
0.0290
0.46
0.74
Notes :
1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
Lead : 42 Alloy ; solder plating
Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0

Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

A
B
C
D
1
2
3
K
L
J
G
H
F
E
2
1
2
3
I
Style : Pin 1.Base 2.Collector 3.Emitter
3-Lead Plastic Surface Mounted Package
CYStek Package Code : F3
Marking :
D5510