CYStech Electronics Corp.
Spec. No. : C848T3-H
Issued Date : 2002.08.18
Revised Date : 2005.09.16
Page No. : 1/4
BTD882T3/S
CYStek Product Specification
Low Vcesat NPN Epitaxial Planar Transistor
BTD882T3/S
Features
Low V
CE
(sat), typically 0.25V at I
C
/ I
B
= 2A / 0.2A
Excellent current gain characteristics
Complementary to BTB772T3/S
Pb-free package is available
Symbol Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limit
Unit
Collector-Base Voltage
V
CBO
40 V
Collector-Emitter Voltage
V
CEO
30 V
Emitter-Base Voltage
V
EBO
5 V
I
C
(DC)
3 A
Collector Current
I
C
(Pulse)
7 *1
A
P
d
(Ta=25)
1
Power Dissipation
P
d
(Tc=25)
10
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
Note : *1. Single Pulse Pw350s,Duty2%.
TO-126
BTD882T3
BBase
CCollector
EEmitter
E C B
CYStech Electronics Corp.
Spec. No. : C848T3-H
Issued Date : 2002.08.18
Revised Date : 2005.09.16
Page No. : 2/4
BTD882T3/S
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min. Typ. Max. Unit
Test
Conditions
BV
CBO
40 - - V
I
C
=50A, I
E
=0
BV
CEO
30 - - V
I
C
=1mA, I
B
=0
BV
EBO
5 - - V
I
E
=50A, I
C
=0
I
CBO
- - 1
A
V
CB
=50V, I
E
=0
I
EBO
- - 1
A
V
EB
=3V, I
C
=0
*V
CE(sat)
- 0.25
0.5 V
I
C
=2A, I
B
=0.2A
*V
BE(sat)
- - 2 V
I
C
=2A, I
B
=0.2A
*h
FE
1 52 - - -
V
CE
=2V, I
C
=20mA
*h
FE
2 100 - 500 -
V
CE
=2V, I
C
=1A
f
T
-
90
-
MHz
V
CE
=5V, I
C
=0.1A, f=100MHz
Cob - 45 - pF
V
CB
=10V, f=1MHz
*Pulse Test : Pulse Width
380s, Duty Cycle
2%
Classification Of h
FE
2
Rank Q
P
E
Range 100~200 160~320
250~500
Ordering Information
Device Package Shipping
BTB882T3
TO-126
500 pcs / bag
BTB882T3S TO-126
(Pb-free)
500 pcs / bag
CYStech Electronics Corp.
Spec. No. : C848T3-H
Issued Date : 2002.08.18
Revised Date : 2005.09.16
Page No. : 3/4
BTD882T3/S
CYStek Product Specification
Characteristic Curves
Current gain vs Collector current
10
100
1000
1
10
100
1000
10000
Collector current---IC(mA)
Current gain---HFE
VCE=5V
VCE=1V
VCE=2V
C-E saturation voltage vs Collector current
1
10
100
1000
1
10
100
1000
10000
Collector current---IC(mA)
C-E saturation voltage---
VCE(SAT)(mV)
IC=40IB
IC=20IB
IC=10IB
B-E saturation votlage vs Collector current
100
1000
10000
1
10
100
1000
10000
Collector current---IC(mA)
B-E saturation voltage---
VBE(SAT)(mV)
IC=10IB
Power derating curves
0
2
4
6
8
10
12
0
50
100
150
200
Temperature---()
Power Dissipation---(W)
Ta=25
Tc=25
CYStech Electronics Corp.
Spec. No. : C848T3-H
Issued Date : 2002.08.18
Revised Date : 2005.09.16
Page No. : 4/4
BTD882T3/S
CYStek Product Specification
TO-126 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
1
-
*3
-
*3
F 0.0280
0.0319 0.71 0.81
2
-
*3
-
*3
G 0.0480
0.0520 1.22 1.32
3
-
*3
-
*3
H 0.1709
0.1890 4.34 4.80
4
-
*3
-
*3
I 0.0950
0.1050 2.41 2.66
A 0.1500
0.1539 3.81 3.91 J 0.0450
0.0550 1.14 1.39
B 0.2752
0.2791 6.99 7.09 K 0.0450
0.0550 1.14 1.39
C 0.5315
0.6102 13.50 15.50 L
- *0.0217 - *0.55
D 0.2854
0.3039 7.52 7.72 M 0.1378
0.1520 3.50 3.86
E
0.0374
0.0413
0.95
1.05
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
A
B
C
F
D
E
H
1 2 3
K
J
I
3
4
L
M
1
2
G
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-126 Plastic Package
CYStek Package Code: T3
Marking:
D882
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