ChipFind - документация

Электронный компонент: BTN1053M3

Скачать:  PDF   ZIP
CYStech Electronics Corp.

Spec. No. : C818M3
Issued Date : 2003.04.04
Revised Date :2004.04.12
Page No. : 1/5
BTN1053M3
CYStek Product Specification
NPN Epitaxial Planar Transistor
BTN1053M3
Features
2W power dissipation
Excellent H
FE
Characteristics up to 1A
Low Saturation Voltage
V
CE(sat)
=0.15V(typ)(I
C
=1A,I
B
=50mA).
5A peak pulse current
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol Limits
Unit
Collector-Base Voltage
V
CBO
150 V
Collector-Emitter Voltage
V
CEO
75 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current(DC)
I
C
1.5
Collector Current(Pulsed)(
Note 1)
I
CP
5
A
1
(Note 2)
Power Dissipation@Ta=25
P
D
2
(Note 3)
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C

Note 1: Single pulse, Pw300s, Duty Cycle2%.
2: When the device is mounted on a FR-4 PCB measuring 15 15 0.6mm.
3: When the device is mounted on a ceramic substrate measuring 40 40 0.6mm.
SOT-89
CYStech Electronics Corp.

Spec. No. : C818M3
Issued Date : 2003.04.04
Revised Date :2004.04.12
Page No. : 2/5
BTN1053M3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min.
Typ.
Max.
Unit
Test
Conditions
BV
CBO
150
300
- V
I
C
=100A
BV
CES
150
300
V
I
C
=100A
BV
CEO
75
100
-
V
I
C
=10mA
BV
EBO
5
7.7
-
V
I
E
=100A
I
CBO
-
0.9
10
nA
V
CB
=120V
I
CES
-
0.9
10
nA
V
CE
=120V
I
EBO
-
0.6
10
nA
V
EB
=4V
V
CE(sat)
1 * - - 40 mV
I
C
=200mA, I
B
=20mA
V
CE(sat)
2 *
-
-
200
mV
I
C
=500mA, I
B
=20mA
V
CE(sat)
3 *
-
-
1.2
V
I
C
=1A, I
B
=10mA
V
CE(sat)
4 *
-
-
500
mV
I
C
=2A, I
B
=100mA
V
BE(sat)
*
-
1.1
1.2
V
I
C
=3A, I
B
=100mA
V
BE(on)
*
-
1.1
1.2
V
V
CE
=2V, I
C
=3A
h
FE
1 *
270
-
-
-
V
CE
=2V, I
C
=10mA
h
FE
2 *
300
600
1200
-
V
CE
=2V, I
C
=500mA
h
FE
3 *
120
180-
-
-
V
CE
=2V, I
C
=1A
h
FE
4 *
10
-
-
-
V
CE
=2V, I
C
=4.5A
f
T
-
140
-
MHz
V
CE
=10V, I
C
=50mA, f=100MHz
Cob -
20
-
pF
V
CB
=10V, I
E
=0A, f=1MHz
*Pulse Test: Pulse Width
300s, Duty Cycle
2%















CYStech Electronics Corp.

Spec. No. : C818M3
Issued Date : 2003.04.04
Revised Date :2004.04.12
Page No. : 3/5
BTN1053M3
CYStek Product Specification
Characteristic Curves
Grounded Emitter Output Characteristics
0
200
400
600
800
1000
1200
1400
1600
1800
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Collector Current---IC(mA)
IB=0mA
4mA
6mA
8mA
2mA
10mA
Grounded Emitter Output Characteristics
0
500
1000
1500
2000
2500
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Collector Current---IC(mA)
IB=0mA
5mA
10mA
15mA
20mA
25mA
Grounded Emitter Output Characteristics
0
50
100
150
200
250
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Collector Current---IC(mA)
IB=0uA
100uA
200uA
300uA
400uA
500uA
Grounded Emitter Output Characteristics
0
200
400
600
800
1000
1200
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Collector Current---IC(mA)
IB=0uA
500uA
1mA
1.5mA
2mA
2.5mA
Current Gain vs Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
Current Gain---HFE
VCE=1V
Current Gain vs Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
Current Gain---
HFE
VCE=2V
CYStech Electronics Corp.

Spec. No. : C818M3
Issued Date : 2003.04.04
Revised Date :2004.04.12
Page No. : 4/5
BTN1053M3
CYStek Product Specification
Current Gain vs Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
Current Gain---
HFE
VCE=5V
Saturation Voltage vs Collector Current
1
10
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage-(mV)
VCE(SAT)@IC=10IB
Saturation Voltage vs Collector Current
1
10
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage-(mV)
VCE(SAT)@IC=20IB
Saturation Voltage vs Collector Current
100
1000
10000
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage-(mV)
VBE(SAT)@IC=10IB
Power Derating Curve
0
0.2
0.4
0.6
0.8
1
1.2
0
50
100
150
200
Ambient Temperature---TA()
Power Dissipation---PD(W)
(Note 2 on page 1)



CYStech Electronics Corp.

Spec. No. : C818M3
Issued Date : 2003.04.04
Revised Date :2004.04.12
Page No. : 5/5
BTN1053M3
CYStek Product Specification
SOT-89 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1732
0.1811 4.40 4.60 F 0.0583
0.0598 1.48 1.527
B 0.1594
0.1673 4.05 4.25 G 0.1165 0.1197 2.96 3.04
C 0.0591
0.0663 1.50 1.70 H 0.0551 0.0630 1.40 1.60
D 0.0945
0.1024 2.40 2.60 I 0.0138 0.0161 0.35 0.41
E 0.01417
0.0201 0.36 0.51
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.




78L05
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
E
F
G
C
B
A
I
D
H
3
2
1
Marking:
Style: Pin 1. Base 2. Collector 3. Emitter
CB