CYStech Electronics Corp.
Spec. No. : C208M3
Issued Date : 2003.08.18
Revised Date :
Page No. : 1/4
BTC3906M3
CYStek Product Specification
General Purpose NPN Epitaxial Planar Transistor
BTC3906M3
Description
The BTC3906M3 is designed for general purpose applications requiring high breakdown voltage.
Features
High collector-emitter breakdown voltage. (BV
CEO
=160V @ I
C
=1mA)
Complement to BTA1514M3
Symbol Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol Limits
Unit
Collector-Base Voltage
V
CBO
180 V
Collector-Emitter Voltage
V
CEO
160 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
I
C
600 mA
0.6 W
1
(Note 1)
W
Power Dissipation
Pd
2
(Note 2)
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
Note
:
1. When mounted on FR-4 PCB with area measuring 10101 mm
2 .
When mounted on ceramic with area measuring 40401 mm
BTC3906M3
SOT-89
BBase
CCollector
EEmitter
B C E
CYStech Electronics Corp.
Spec. No. : C208M3
Issued Date : 2003.08.18
Revised Date :
Page No. : 2/4
BTC3906M3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min.
Typ.
Max.
Unit
Test
Conditions
BV
CBO
180 -
- V I
C
=100A
BV
CEO
160 -
- V
I
C
=1mA
BV
EBO
6 - - V
I
E
=10A
I
CBO
- - 50
nA
V
CB
=120V
I
EBO
- - 50
nA
V
EB
=4V
*V
CE(sat)
1 - 0.1 0.15 V
I
C
=10mA, I
B
=1mA
*V
CE(sat)
2 -
- 0.2. V
I
C
=50mA, I
B
=5mA
*V
BE(sat)
1 -
- 1 V
I
C
=10mA, I
B
=1mA
*V
BE(sat)
2 -
- 1 V
I
C
=50mA, I
B
=5mA
*h
FE
1
25 - - -
V
CE
=5V, I
C
=1mA
*h
FE
2
60 - - -
V
CE
=5V, I
C
=10mA
*h
FE
3
40 - - -
V
CE
=5V, I
C
=50mA
*h
FE
4 52 - 390 -
V
CE
=6V, I
C
=2mA
f
T
100 - -
MHz
V
CE
=20V, I
C
=10mA, f=100MHz
Cob - - 6 pF
V
CB
=20V, I
E
=0A,f=1MHz
*Pulse Test: Pulse Width
380s, Duty Cycle
2%
Classification Of h
FE
4
Rank K P Q R
Range 52~120
82~180
120~270
180~390
CYStech Electronics Corp.
Spec. No. : C208M3
Issued Date : 2003.08.18
Revised Date :
Page No. : 3/4
BTC3906M3
CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
100
1000
0.1
1
10
100
Collector Current--- IC(mA)
Current Gain---
HFE
HFE@VCE=6V
Saturation Voltage vs Collector Current
10
100
1000
0.1
1
10
100
Collector Current ---IC(mA)
Saturation Voltage---(mV)
VCE(SAT)@IC=10IB
Saturation Voltage vs Collector Current
100
1000
0.1
1
10
100
1000
Collector Current ---IC(mA)
Saturation Voltage---(mV)
VBE(SAT)@IC=10IB
Cutoff Frequency vs Collector Current
0.1
1
1
10
100
Collector Current---IC(mA)
Cutoff Frequency---FT(GHZ)
FT@VCE=12V
Power Derating Curves
0
0.5
1
1.5
2
2.5
0
50
100
150
200
Ambient Temperature ---Ta( )
Power Dissipation---PD(mW)
See Note 2 on page 1
See Note 1 on page 1
CYStech Electronics Corp.
Spec. No. : C208M3
Issued Date : 2003.08.18
Revised Date :
Page No. : 4/4
BTC3906M3
CYStek Product Specification
SOT-89 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1732
0.1811 4.40 4.60 F 0.0583
0.0598 1.48 1.527
B 0.1594
0.1673 4.05 4.25 G 0.1165 0.1197 2.96 3.04
C 0.0591
0.0663 1.50 1.70 H 0.0551 0.0630 1.40 1.60
D 0.0945
0.1024 2.40 2.60 I 0.0138 0.0161 0.35 0.41
E 0.01417
0.0201 0.36 0.51
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Marking:
G1
E
F
G
C
B
A
I
D
H
3
2
1
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
Style: Pin 1. Base 2. Collector 3. Emitter
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