CYStech Electronics Corp.
Spec. No. : C216N3
Issued Date : 2003.10.07
Revised Date :
Page No. : 1/4
BTNA06N3
CYStek Product Specification
General Purpose NPN Epitaxial Planar Transistor
BTNA06N3
Description
The BTNA06N3 is designed for use in general purpose amplification and switching application.
High current , I
C
= 0.5A
Low V
CE(sat)
, V
CE(sat)
= 0.25V(typ.) at I
C
/I
B
= 100mA/10mA
Complementary to BTPA56N3
.
Symbol Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
80
V
Emitter-Base Voltage
V
EBO
4
V
Collector Current
I
C
500
mA
Power Dissipation
Pd
225
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
BTNA06N3
SOT-23
BBase
CCollector
EEmitter
CYStech Electronics Corp.
Spec. No. : C216N3
Issued Date : 2003.10.07
Revised Date :
Page No. : 2/4
BTNA06N3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min.
Typ.
Max.
Unit
Test
Conditions
BV
CBO
80 - - V
I
C
=100A
BV
CEO
80 - - V
I
C
=1mA
BV
EBO
4 - - V
I
E
=100A
I
CBO
- - 100
nA
V
CB
=80V
I
CEO
- - 100
nA
V
CE
=60V
*V
CE(sat)
- - 0.25 V
I
C
=100mA, I
B
=10mA
*V
BE(on)
- - 1.2 V
V
CE
=1V, I
C
=100mA
*h
FE
1
50 - - -
V
CE
=1V, I
C
=10mA
*h
FE
2
50 - - -
V
CE
=1V, I
C
=100mA
f
T
100 - -
MHz
V
CE
=2V, I
C
=10mA, f=100MHz
*Pulse Test: Pulse Width
380
s, Duty Cycle
2%
CYStech Electronics Corp.
Spec. No. : C216N3
Issued Date : 2003.10.07
Revised Date :
Page No. : 3/4
BTNA06N3
CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
10
100
1000
1
10
100
1000
Collector Current---IC(mA)
Current Gain---HFE
VCE = 5V
VCE = 1V
VCE = 2V
Saturation Voltage vs Collector Current
10
100
1000
1
10
100
1000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VCE(SAT) @IC=20IB
VCE(SAT) @IC=10IB
Saturation Voltage vs Collector Current
100
1000
1
10
100
1000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VBE(SAT) @IC=10IB
On Voltage vs Collector Current
100
1000
1
10
100
1000
Collector Current---IC(mA)
On Voltage---(mV)
VBE(ON) @VCE=1V
Power Derating Curve
0
50
100
150
200
250
0
50
100
150
200
Ambient Temperature---TA()
Power Dissipation---PD(mW)
CYStech Electronics Corp.
Spec. No. : C216N3
Issued Date : 2003.10.07
Revised Date :
Page No. : 4/4
BTNA06N3
CYStek Product Specification
SOT-23 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1102
0.1204 2.80 3.04 J 0.0034
0.0070
0.085 0.177
B 0.0472
0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335
0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118
0.0197 0.30 0.50 S 0.0830
0.1083 2.10 2.75
G 0.0669
0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H
0.0005
0.0040
0.013
0.10
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
H
J
K
D
A
L
G
V
C
B
3
2
1
S
Style: Pin 1.Base 2.Emitter 3.Collector
Marking:
TE
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
1G
PDF 
ZIP