CYStech Electronics Corp.
Spec. No. : C210M3-H
Issued Date : 2003.06.12
Revised Date :
Page No. : 1/4
BTNA44M3
CYStek Product Specification
High Voltage NPN Epitaxial Planar Transistor
BTNA44M3
Features
High breakdown voltage. (BV
CEO
= 400V)
Low saturation voltage, typically V
CE
(sat)
= 0.1V at I
C
/I
B
=10mA/1mA.
Complementary to BTPA94M3
Symbol Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limit
Unit
Collector-Base Voltage
V
CBO
400 V
Collector-Emitter Voltage
V
CEO
400 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
I
C
300
mA
Power Dissipation
Pd
600
mW
Thermal Resistance, Junction to Ambient
R
JA
208
C/W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
SOT-89
BTNA44M3
BBase
CCollector
EEmitter
B C E
CYStech Electronics Corp.
Spec. No. : C210M3-H
Issued Date : 2003.06.12
Revised Date :
Page No. : 2/4
BTNA44M3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min. Typ. Max. Unit
Test
Conditions
BV
CBO
400 - - V
I
C
=50A, I
E
=0
BV
CEO
400 - - V
I
C
=1mA, I
B
=0
BV
EBO
6 - - V
I
E
=50A, I
C
=0
I
CBO
- - 10
A
V
CB
=400V, I
E
=0
I
EBO
- - 10
A
V
EB
=6V,I
C
=0
V
CE(sat)
1 - - 0.4 V
I
C
=1mA, I
B
=0.1mA
*V
CE(sat)
2 - 0.1 0.5 V
I
C
=10mA, I
B
=1mA
*V
CE(sat)
3 -
- 0.75 V
I
C
=50mA, I
B
=5mA
*V
BE(sat)
- - 1.5 V
I
C
=10mA, I
B
=1mA
h
FE
1 40 - - -
V
CE
=10V, I
C
=1mA
h
FE
2 52 - 270 -
V
CE
=10V, I
C
=10mA
*h
FE
3
45 - - -
V
CE
=10V, I
C
=50mA
*h
FE
4
40 - - -
V
CE
=10V, I
C
=100mA
f
T
20
- -
MHz
V
CE
=10V, I
C
=10mA, f=100MHz
Cob - - 7
pF
V
CB
=20V, f=1MHz
*Pulse Test : Pulse Width
380s, Duty Cycle
2%
Classification Of h
FE
2
Rank K
P
Q
Range 52~120 82~180 120~270
CYStech Electronics Corp.
Spec. No. : C210M3-H
Issued Date : 2003.06.12
Revised Date :
Page No. : 3/4
BTNA44M3
CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
10
100
1000
0.1
1
10
100
1000
Collector Current ---IC(mA)
Current Gain---
HFE
HFE@VCE=10V
Saturation Voltage vs Collector Current
10
100
1000
10000
0.1
1
10
100
1000
Collector Current ---IC(mA)
Saturation Voltage-(mV)
VCESAT@IC=10IB
Saturation Voltage vs Collector Current
100
1000
10000
0.1
1
10
100
1000
Collector Current--- IC(mA)
Saturation Voltage-(mV)
VBESAT@IC=10IB
Power Derating Curve
0
100
200
300
400
500
600
700
0
50
100
150
200
Ambient Temperature---TA( )
Power Dissipation---PD(mW)
CYStech Electronics Corp.
Spec. No. : C210M3-H
Issued Date : 2003.06.12
Revised Date :
Page No. : 4/4
BTNA44M3
CYStek Product Specification
SOT-89 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1732
0.1811 4.40 4.60 F 0.0583
0.0598 1.48 1.527
B 0.1594
0.1673 4.05 4.25 G 0.1165 0.1197 2.96 3.04
C 0.0591
0.0663 1.50 1.70 H 0.0551 0.0630 1.40 1.60
D 0.0945
0.1024 2.40 2.60 I 0.0138 0.0161 0.35 0.41
E 0.01417
0.0201 0.36 0.51
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Marking:
44
E
F
G
C
B
A
I
D
H
3
2
1
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
Style: Pin 1. Base 2. Collector 3. Emitter
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