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Электронный компонент: BTP2907AL3

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CYStech Electronics Corp.

Spec. No. : C317L3-H
Issued Date : 2003.04.15
Revised Date :
Page No. : 1/3
BTP2907AL3
CYStek Product Specification

General Purpose PNP Epitaxial Planar Transistor
BTP2907AL3
Description
The BTP2907AL3 is designed for general purpose amplifier applications. It is housed in the
SOT-223 package which is designed for medium power surface mount applications.
Low V
CE(sat)
High switching speed.
Complementary to BTN2222AL3
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-600
mA
Power Dissipation @TC=25
Pd
5
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
Electrical Characteristics
(Ta=25
C)
Symbol Min.
Typ.
Max.
Unit
Test
Conditions
BVCBO -60 -
-
V IC=-10uA
*BVCEO -60
-
-
V IC=-10mA
BVEBO -5 -
-
V IE=-10uA
ICBO - - -10 nA
VCB=-50V
ICEX - - -50 nA
VCE=-30V,
VBE(OFF)=-0.5V
*VCE(sat) - -0.2 -0.4 V IC=-150mA,
IB=-15mA
*VCE(sat) - -0.5 -1.6 V IC=-500mA,
IB=-50mA
*VBE(sat) -
- -1.3 V IC=-150mA,
IB=-15mA
*VBE(sat) -
- -2.6 V IC=-500mA,
IB=-50mA
*hFE
75 - - -
VCE=-10V,
IC=-100uA
*hFE
100
- - -
VCE=-10V,
IC=-1mA
*hFE
100
- - -
VCE=-10V,
IC=-10mA
*hFE 100 - 300 -
VCE=-10V,
IC=-150mA
*hFE
50 - - -
VCE=-10V,
IC=-500mA
fT
200
-
MHz
VCE=-20V, IC=-50mA, f=100MHz
Cob - - 8 pF
VCB=-10V,
IE=0A,f=1MHz
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
CYStech Electronics Corp.

Spec. No. : C317L3-H
Issued Date : 2003.04.15
Revised Date :
Page No. : 2/3
BTP2907AL3
CYStek Product Specification

Characteristic Curves
Current Gain vs Collector Current
10
100
1000
0.1
1
10
100
1000
Collector Current---IC(mA)
Current Gain---HFE
VCE=10V
Saturation Voltage vs Collector Current
0.01
0.1
1
10
0.1
1
10
100
1000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VCE(sat)@IC=10IB
Saturation Voltage vs Collector Current
0.01
0.1
1
10
0.1
1
10
100
1000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VCE(sat)@IC=20IB
Saturation Voltage vs Collector Current
0.1
1
10
0.1
1
10
100
1000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VBE(sat)@IC=10IB
On Voltage vs Collector Current
0.4
0.6
0.8
1
1.2
0.1
1
10
100
1000
Collector Current---IC(mA)
On Voltage (V)
VBE(on)@VCE=1V
Power Derating Curve
0
1
2
3
4
5
6
0
50
100
150
200
Case Temperature --- TC( )
Power Dissipation---PD(W)
CYStech Electronics Corp.

Spec. No. : C317L3-H
Issued Date : 2003.04.15
Revised Date :
Page No. : 3/3
BTP2907AL3
CYStek Product Specification
SOT-223 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1142
0.1220 2.90 3.10 G 0.0551
0.0709 1.40 1.80
B 0.2638
0.2874 6.70 7.30 H 0.0098
0.0138 0.25 0.35
C 0.1299
0.1457 3.30 3.70 I 0.0008
0.0039 0.02 0.10
D 0.0236
0.0315 0.60 0.80 a1 *13
o
- *13
o
-
E *0.0906 -
*2.30
-
a2 0
o
10
o
0
o
10
o
F
0.2480
0.2638
6.30
6.70
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
3
2
1
F
B
A
C
D
E
G
H
a1
a2
I
Style: Pin 1.Base 2.Collector 3.Emitter
Marking:
3-Lead SOT-223 Plastic
Surface Mounted Package
CYStek Package Code: L3
2907A