CYStech Electronics Corp.
Spec. No. : C254N3
Issued Date : 2002.06.01
Revised Date : 2002.11.02
Page No. : 1/3
DTA114TN3
CYStek Product Specification
General Purpose PNP Digital Transistors (Built-in Resistor)
DTA114TN3
Features
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input. They also have the advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making device design easy
.
Complements the DTC114TN3
Equivalent Circuit
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC (Max)
-100
mA
Power Dissipation
Pd
200
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
DTA114TN3
R1=10
k
BBase
CCollector
EEmitter
SOT-23
CYStech Electronics Corp.
Spec. No. : C254N3
Issued Date : 2002.06.01
Revised Date : 2002.11.02
Page No. : 2/3
DTA114TN3
CYStek Product Specification
Electrical Characteristics
(Ta=25
C)
Parameter Symbol
Min. Typ. Max. Unit
Test
Conditions
Collector-Base Breakdown
Voltage
VCBO -50
-
- V IC=-50uA
Collector-Emitter Breakdown
Voltage
VCEO -50
-
- V IC=-1mA
Emitter-Base Breakdown
Voltage
VEBO -5 -
- V IE=-50uA
Collector-Base Cutoff Current
ICBO
-
-
-0.5
uA
VCB=-50V
Emitter-Base Cutoff Current
IEBO
-
-
-0.5
uA
VEB=-4V
Collector-Emitter Saturation
Voltage
VCE(sat)
- 0.1
-0.3
V IC=-10mA,
IB=-1mA
DC Current Gain
hFE
100
-
600
-
VCE=-5V, IC=-1mA
Input Resistance
R
7
10
13
k
-
Transition Frequency
fT
-
250
-
MHz VCE=-10V, IE=-5mA, f=100MHz*
* Transition frequency of the device
Characteristic Curves
Current Gain vs Collector Current
10
100
1000
0.1
1
10
100
Collector Current---IC(mA)
Current Gain---
HFE
HFE@VCE=5
Saturation Voltage vs Collector Current
10
100
1000
1
10
100
Collector Current---IC(mA)
Sa
tura
tion V
o
lta
ge
---(mV
)
VCE(SAT)@IC=10I
PD - Ta
0
50
100
150
200
250
0
50
100
150
200
Ambient Temperature --- Ta( )
Powe
r Dissipa
tion---PD(mW)
CYStech Electronics Corp.
Spec. No. : C254N3
Issued Date : 2002.06.01
Revised Date : 2002.11.02
Page No. : 3/3
DTA114TN3
CYStek Product Specification
SOT-23 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1102
0.1204 2.80 3.04 J 0.0034
0.0070 0.085 0.177
B 0.0472
0.0630 1.20 1.60 K 0.0128
0.0266 0.32 0.67
C 0.0335
0.0512 0.89 1.30 L 0.0335
0.0453 0.85 1.15
D 0.0118
0.0197 0.30 0.50 S 0.0830
0.1083 2.10 2.75
G 0.0669
0.0910 1.70 2.30 V 0.0098
0.0256 0.25 0.65
H
0.0005
0.0040
0.013
0.10
Notes:
1.Dimension and tolerance based on our Spec. dated Feb. 18,2002.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local CYCtek sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
H
J
K
D
A
L
G
V
C
B
3
2
1
S
Style: Pin 1.Base 2.Emitter 3.Collector
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Marking:
6E
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