CYStech Electronics Corp.
Spec. No. : C269N3
Issued Date : 2003.04.29
Revised Date :
Page No. : 1/4
DTA143TN3
CYStek Product Specification
PNP Digital Transistors (Built-in Resistor)
DTA143TN3
Features
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the
input. They also have the advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making device design easy.
Complements the DTC143TN3
Equivalent Circuit Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-50 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-100
mA
Power Dissipation
Pd
200
mW
Thermal Resistance, Junction to Ambient
R
JA
625
C/W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
DTA143TN3
R1=4.7
k
BBase
CCollector
EEmitter
SOT-23
CYStech Electronics Corp.
Spec. No. : C269N3
Issued Date : 2003.04.29
Revised Date :
Page No. : 2/4
DTA143TN3
CYStek Product Specification
Electrical Characteristics
(Ta=25
C)
Parameter Symbol
Min.
Typ.
Max.
Unit
Test
Conditions
Collector-Base Breakdown Voltage
BV
CBO
-50 -
- V I
C
=-50A
Collector-Emitter Breakdown
Voltage
BV
CEO
-50 -
- V I
C
=-1mA
Emitter-Base Breakdown Voltage
BV
EBO
-5 -
- V
I
E
=-50A
Collector-Base Cutoff Current
I
CBO
- -
-0.5
A
V
CB
=-50V
Emitter-Base Cutoff Current
I
EBO
- -
-0.5
A
V
EB
=-4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
- 0.1
-0.3
V
I
C
=-5mA, I
B
=-0.25mA
DC Current Gain
h
FE
100 - 600 - V
CE
=-5V, I
C
=-1mA
Input Resistance
R
3.29 4.7 6.11 k
-
Transition Frequency
f
T
-
250
-
MHz
V
CE
=-10V, I
C
=-5mA, f=100MHz *
* Transition frequency of the device
CYStech Electronics Corp.
Spec. No. : C269N3
Issued Date : 2003.04.29
Revised Date :
Page No. : 3/4
DTA143TN3
CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
100
1000
0.1
1
10
100
Collector Current---IC(mA)
Current Gain---HFE
VCE=5V
Saturation Voltage vs Collector Current
10
100
1000
0.1
1
10
100
Collector Current---IC(mA)
Saturation Voltage---(mV)
VCE(SAT)@IC=20IB
Power Derating Curve
0
50
100
150
200
250
0
50
100
150
200
Ambient Temperature---TA()
Power Dissipation---PD(mW
)
CYStech Electronics Corp.
Spec. No. : C269N3
Issued Date : 2003.04.29
Revised Date :
Page No. : 4/4
DTA143TN3
CYStek Product Specification
SOT-23 Dimension
*:Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1102
0.1204 2.80 3.04 J 0.0034
0.0070
0.085 0.177
B 0.0472
0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335
0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118
0.0197 0.30 0.50 S 0.0830
0.1083 2.10 2.75
G 0.0669
0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H
0.0005
0.0040
0.013
0.10
Notes :
1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
Lead : 42 Alloy ; solder plating
Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
H
J
K
D
A
L
G
V
C
B
3
2
1
S
Style : Pin 1.Base 2.Emitter 3.Collector
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Marking:
6F
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