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Электронный компонент: E13004TO-220

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POWER TRANSISTOR E13004
ELECTRICAL CHARACTERISTICS
Tc=25
o
C unless otherwise specified
FEATURES
NPN SILICON TRANSISTOR
Tc=25
o
C unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
=1mA , I
E
=0
I
C
=10mA , I
B
=0
I
E
=1mA , I
C
=0
V
CB
=600V , I
E
=0
V
CE
=300V , I
B
=0
V
EB
=9V , I
C
=0
V
CE
=5V , I
C
=1A
I
C
=2A , I
B
=500mA
I
C
=2A , I
B
=500mA
V
CE
=10V , I
C
=500mA
f=1MHz
I
C
=2A , I
B1
=-I
B2
=0.4mA ,
V
CC
=125V
V
600
300
1
1
60
0.6
1.6
0.9
4
100
9
10
4
V
V
mA
A
mA
V
V
MHz
S
S
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
BEsat
f
T
t
f
t
s
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
SWITCHING REGULATOR APPLICATION
High speed switching
Suitable for switching regulator
and motor control
Case : TO-220 molded plastic body
Parameter
Symbol
Value
UNIT
Power dissipation
P
C
W
75
4.0
-55
o
C to +150
o
C
A
A
o
C
I
C
8.0
I
CP
T
J
, T
STG
Collector current (DC)
Collector current (Pulse)
Operating and storage junction temperature range
TO-220
DIM
MIN
MAX
MIN
MAX
MIL L IME TE R S
INC HE S
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
1.15
Z
0.080
2.04
B
Q
H
Z
L
V
G
N
A
K
F
1 2 3
4
D
S E ATING
P L ANE
T
C
S
T
U
R
J
RATINGS AND CHARACTERISTIC CURVES E13004