MODEL NO.
D AMB5 1 1 1
A m p l i f i e r
F E AT U R E S
1-8 GHz Broad Bandwidth
Typical Gain of 8 dB
+16 dBm P-out @ 1 dB compression
Single Power Supply
Input/Output VSWR Typical 1.5:1
20-Pin Hermetic Package
Available as Die, Part# DAMB4011D
AMPR
D A I C O
I n d u s t r i e s
Rev. ND / Iss. 1
.310
.003
.310
.003
.045
.005
.080
.010
.016
.001
.005
.001
.02 7
.004
.125 Dia.
.003
Thermal
Button
PIN 1
.050 Typ.
.020
.002
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
N/C
OUTPUT
N/C
N/C
N/C
N/C
INPUT
100pF
+12V
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
FREQUENCY (GHz)
Gain vs. Freq. (packaged)
GAIN (dB)
Note:
1. Min / Max Values Listed are Production Tested
2. Frequency Separation of Two Signals is 500 KHz
ELECTRICAL SPECIFICATIONS
T
A
=
25
C, V
DD
= +12V, RF = 4.0 GHz
Parameter
Min
Typ
Max Units
Frequency of Operation
1
8
GHz
Gain
6.8
8
dB
Gain Flatness
0.5
1.0
dB
Noise Figure
5
dB
Output 1 dB Compression
+16
dBm
Input / Output VSWR
1.5:1
2:1
Reverse Isolation
18
23
dB
Output Third-Order Intercept
+28
dBm
DC Power Supply
10
12
15
V
Supply Current
100
120
mA
(1)
(2)
FREQ
S
11
S
21
S
12
S
22
GHz
MAG. ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
0.5
0.031
26
2.398
-169
0.016
82
0.371
-60
1.0
0.054
-66
2.834
159
0.028
56
0.304
-86
2.0
0.052
-140
2.662
115
0.041
35
0.247
-135
3.0
0.033
-114
2.528
80
0.061
18
0.236
-177
4.0
0.077
-102
2.486
47
0.080
-7
0.224
141
5.0
0.141
-122
2.561
14
0.097
-37
0.168
101
6.0
0.195
-145
2.683
-26
0.105
-74
0.060
70
7.0
0.216
-176
2.644
-68
0.104
-115
0.096
160
8.0
0.113
150
2.673
-116
0.112
-163
0.166
110
9.0
0.258
-122
2.473
177
0.135
126
0.070
-97
10.0
0.407
176
1.675
113
0.133
60
0.339
152
10.5
0.069
111
2.282
52
0.180
8
0.206
57
S-Parameters (typical) -I
DD
= 99.1 mA
Note:
1. Test Conditions: V
DD
= +12V, T
A
= 25
C.
2. S-Parameters and other data have been measured with the die
in a microstrip test fixture as shown in the typical bonding diagram.
OUTPUT
INPUT
0
2
4
6
8
10
12
-10
-15
-20
-25
-30
-5
0
FREQUENCY (GHz)
RETURN LOSS (dB)
Input / Output Return Loss vs. Freq. (packaged)
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