Philips Semiconductors
Product specification
Rectifier diodes
BYV72E series
ultrafast, rugged
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high efficiency
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
UNIT
rugged dual rectifier diodes in a
plastic
envelope,
featuring
low
BYV72E-
100
150
200
forward
voltage
drop,
ultra-fast
V
RRM
Repetitive peak reverse
100
150
200
V
recovery times and soft recovery
voltage
characteristic. These devices can
V
F
Forward voltage
0.90
0.90
0.90
V
withstand reverse voltage transients
I
O(AV)
Output current (both
30
30
30
A
and have guaranteed reverse surge
diodes conducting)
and
ESD
capability.
They
are
t
rr
Reverse recovery time
28
28
28
ns
intended for use in switched mode
I
RRM
Repetitive peak reverse
0.2
0.2
0.2
A
power supplies and high frequency
current per diode
circuits
in
general
where
low
conduction and switching losses are
essential.
PINNING - SOT93
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
Anode 1 (a)
2
Cathode (k)
3
Anode 2 (a)
tab
Cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-100
-150
-200
V
RRM
Repetitive peak reverse voltage
-
100
150
200
V
V
RWM
Crest working reverse voltage
-
100
150
200
V
V
R
Continuous reverse voltage
1
-
100
150
200
V
I
O(AV)
Output current (both diodes
square wave
-
30
A
conducting)
2
= 0.5; T
mb
104 C
sinusoidal; a = 1.57;
-
27
A
T
mb
107 C
I
O(RMS)
RMS forward current
-
43
A
I
FRM
Repetitive peak forward current t = 25
s;
= 0.5;
-
30
A
per diode
T
mb
104 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
150
A
current per diode
t = 8.3 ms
-
160
A
sinusoidal; with reapplied
V
RWM(max)
I
2
t
I
2
t for fusing
t = 10 ms
-
112
A
2
s
I
RRM
Repetitive peak reverse current t
p
= 2
s;
= 0.001
-
0.2
A
per diode
I
RSM
Non-repetitive peak reverse
t
p
= 100
s
-
0.2
A
current per diode
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
1 T
mb
144C for thermal stability.
2 Neglecting switching and reverse current losses.
For output currents in excess of 20 A, connection should be made to the exposed metal mounting base.
1
2
3
tab
k
a1
a2
November 1994
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV72E series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
Human body model;
-
8
kV
capacitor voltage
C = 250 pF; R = 1.5 k
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
per diode
-
-
2.4
K/W
mounting base
both diodes conducting
-
-
1.4
K/W
R
th j-a
Thermal resistance junction to
in free air
-
45
-
K/W
ambient
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage (per diode)
I
F
= 15 A; T
j
= 150C
-
0.83
0.90
V
I
F
= 15 A
-
0.95
1.05
V
I
F
= 30 A
-
1.00
1.20
V
I
R
Reverse current (per diode)
V
R
= V
RWM
; T
j
= 100 C
-
0.5
1
mA
V
R
= V
RWM
-
10
100
A
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Q
s
Reverse recovery charge (per
I
F
= 2 A; V
R
30 V; -dI
F
/dt = 20 A/
s
-
6
15
nC
diode)
t
rr1
Reverse recovery time (per
I
F
= 1 A; V
R
30 V;
-
20
28
ns
diode)
-dI
F
/dt = 100 A/
s
t
rr2
Reverse recovery time (per
I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A
-
13
22
ns
diode)
V
fr
Forward recovery voltage (per
I
F
= 1 A; dI
F
/dt = 10 A/
s
-
1
-
V
diode)
November 1994
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV72E series
ultrafast, rugged
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Circuit schematic for t
rr2
Fig.4. Definition of t
rr2
Fig.5. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
D.
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
I = 1A
R
rec
I
= 0.25A
0A
trr2
0.5A
IF
IR
time
time
V
F
V
fr
V
F
I
F
0
5
10
15
20
25
0
5
10
15
20
25
D = 1.0
0.5
0.2
0.1
BYV72
Rs = 0.0130 Ohms
Vo = 0.7050 V
IF(AV) / A
PF / W
D =
t
p
t
p
T
T
t
I
Tmb(max) / C
150
138
126
114
102
90
shunt
Current
to 'scope
D.U.T.
Voltage Pulse Source
R
0
5
10
15
0
5
10
15
20
1.9
2.2
2.8
4
BYV72
IF(AV) / A
PF / W
Tmb(max) / C
150
138
126
114
102
a = 1.57
November 1994
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV72E series
ultrafast, rugged
Fig.7. Maximum t
rr
at T
j
= 25 C; per diode
Fig.8. Maximum I
rrm
at T
j
= 25 C; per diode
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.10. Maximum Q
s
at T
j
= 25 C; per diode
Fig.11. Transient thermal impedance; per diode;
Z
th j-mb
= f(t
p
).
1
10
trr / ns
1
10
100
1000
100
dIF/dt (A/us)
IF=1A
IF=20A
100
10
1.0
1.0
10
100
-dIF/dt (A/us)
Qs / nC
IF=20A
10A
5A
2A
1A
10
1
0.1
0.01
Irrm / A
1
10
100
-dIF/dt (A/us)
IF=1A
IF=20A
0.1
0.01
10 s
0.1
1 ms
10 us
tp / s
Zth (K/W)
10
1
t
p
t
D
P
0
VF / V
50
40
30
20
10
0
0.5
1.5
1.0
Tj = 150 C
Tj = 25 C
IF / A
max
typ
November 1994
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV72E series
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
Fig.12. SOT93; pin 2 connected to mounting base.
Notes
1. Accessories supplied on request: refer to mounting instructions for SOT93 envelope.
2. Epoxy meets UL94 V0 at 1/8".
2 max
12.7
max
2
4.6
max
21
max
0.4
1.6
0.5
min
13.6
min
4.4
5.5
1.15
0.95
11
0.5
M
2.2 max
dimensions within
this zone are
uncontrolled
1
2
3
4.25
4.15
13.6
14
15.2
max
November 1994
5
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV72E series
ultrafast, rugged
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1994
6
Rev 1.100
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