DMBT2369
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for high speed switching applications.
Pinning
1 = Base
2 = Emitter
3 = Collector
.091(2.30)
.067(1.70)
SOT-23
Dimensions in inches and (millimeters)
.063(1.60)
.055(1.40)
.108(0.65)
.089(0.25)
.045(1.15)
.034(0.85)
.118(3.00)
.110(2.80)
.020(0.50)
.012(0.30)
.0043(0.11)
.0035(0.09)
.004
(0.10)
.051(1.30)
.035(0.90)
.026(0.65)
.010(0.25)
Max
.027(0.67)
.013(0.32)
2
1
3
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CES
40
V
Emitter-Base Voltage
V
EBO
4.5
V
Collector Current
I
C
500
mA
Total Power Dissipation
P
D
225
mW
Junction Temperature
T
J
+150
o
C
Storage Temperature
T
STG
-55 to +150
o
C
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector-Base Breakdown Volatge
BV
CBO
40
-
-
V
I
C
=10
A, I
E
=0
Collector-Emitter Breakdown Voltage
BV
CES
40
-
-
V
I
C
=10
A, I
B
=0
Collector-Emitter Breakdown Voltage
BV
CEO
15
-
-
V
I
C
=10mA, I
B
=0
Emitter-Base Breakdown Volatge
BV
EBO
4.5
-
-
V
I
E
=10
A, I
C
=0
Collector Cutoff Current
I
CBO
-
-
400
nA
V
CB
=20V, I
E
=0
Collector-Emitter Saturation Voltage
(1)
V
CE(sat)
-
-
250
mV
I
C
=10mA, I
B
=1mA
Base-Emitter Saturation Voltage
(1)
V
BE(sat)
700
-
850
mV
I
C
=10mA, I
B
=1mA
DC Current Gain
(1)
h
FE1
40
-
120
-
I
C
=10mA, V
CE
=1V
h
FE2
20
-
-
-
I
C
=100mA, V
CE
=2V
Output Capacitance
C
ob
-
-
4
pF
V
CB
=5V, f=1MHz, I
E
=0
Electrical Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified)
(1)Pulse Test: Pulse Width
380
s, Duty Cycle
2%
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