D
S12019 Rev. B-2 1 of 2 1N4148 / 1N4448
Features
1N4148 / 1N4448
FAST SWITCHING DIODE
Fast Switching Speed
General Purpose Rectification
Silicon Epitaxial Planar Construction
Characteristic
Symbol
1N4148
1N4448
Unit
Non-Repetitive Peak Reverse Voltage
V
RM
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
75
V
RMS Reverse Voltage
V
R(RMS)
53
V
Forward Continuous Current (Note 1)
I
FM
300
500
mA
Average Rectified Output Current (Note 1)
I
O
150
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
@ t = 1.0
ms
I
FSM
1.0
2.0
A
Power Dissipation (Note 1)
Derate Above 25
C
P
d
500
1.68
mW
mW/
C
Thermal Resistance, Junction to Ambient Air (Note 1)
R
qJA
300
K/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +175
C
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
Characteristic
Symbol
Min
Max
Unit
Test Condition
Maximum Forward Voltage
1N4148
1N4448
1N4448
V
FM
0.62
1.0
0.72
1.0
V
I
F
= 10mA
I
F
= 5.0mA
I
F
= 100mA
Maximum Peak Reverse Current
I
RM
5.0
50
30
25
mA
mA
mA
nA
V
R
= 75V
V
R
= 70V, T
j
= 150
C
V
R
= 20V, T
j
= 150
C
V
R
= 20V
Capacitance
C
j
4.0
pF
V
R
= 0, f = 1.0MHz
Reverse Recovery Time
t
rr
4.0
ns
I
F
= 10mA to I
R
=1.0mA
V
R
= 6.0V, R
L
= 100
W
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Features
Case: DO-35
Leads: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Type Number
Weight: 0.13 grams (approx.)
Mechanical Data
A
A
B
C
D
DO-35
Dim
Min
Max
A
25.40
B
4.00
C
0.60
D
2.00
All Dimensions in mm
D
S12019 Rev. B-2 2 of 2 1N4148 / 1N4448
1
10
100
1000
10,000
0
100
200
I
,
LEAKAGE
CURRENT
(nA)
R
T , JUNCTION TEMPERATURE ( C)
Fig. 2, Leakage Current vs Junction Temperature
j
V = 20V
R
10
1.0
100
1000
0.1
0.01
0
1
2
I
,
INST
ANT
ANE
O
US
F
O
R
W
ARD
CURRENT
(mA)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Characteristics
F
PDF 
ZIP