D
S21802 Rev. D-3 1 of 2 BS170
BS170
N-CHANNEL ENHANCEMENT MODE TRANSISTOR
High Input Impedance
Fast Switching Speed
CMOS Logic Compatible Input
No Thermal Runaway or Secondary
Breakdown
Case: TO-92, Plastic
Leads: Solderable per MIL-STD-202,
Method 208
Pin Connection: See Diagram
Weight: 0.18 grams (approx.)
Mechanical Data
Features
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
60
V
Drain-Gate Voltage
V
DGS
60
V
Gate-Source-Voltage (pulsed)
V
GS
20
V
Drain Current (continuous)
I
D
300
mA
Power Dissipation @T
C
= 25C (Note 1)
P
d
830
mW
Junction Temperature
T
j
150
C
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
C
Characteristic
Symbol
Value
Unit
Maximum Forward Current (continuous)
I
F
0.50
A
Forward Voltage Drop (typ.) @ V
GS
= 0, I
F
= 0.5A, T
j
= 25C
V
F
0.85
V
Maximum Ratings
@ T
A
= 25C unless otherwise specified
Inverse Diode
@ T
A
= 25C unless otherwise specified
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case.
D
S G D
H
H
BOTTOM
VIEW
E
A
B
C
G
TO-92
Dim
Min
Max
A
4.45
4.70
B
4.46
4.70
C
12.7
--
D
0.41
0.63
E
3.43
3.68
G
2.42
2.67
H
1.14
1.40
All Dimensions in mm
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
V
(BR)DSS
60
90
--
V
I
D
= 100A, V
GS
= 0
Gate Threshold Voltage
V
GS(th)
0.8
1.0
3.0
V
V
GS
= V
DS
, I
D
= 1.0mA
Gate-Body Leakage Current
I
GSS
--
--
10
nA
V
GS
= 15V, V
DS
= 0
Drain-Cutoff Current
I
DSS
--
--
0.5
A
V
DS
= 25V, V
GS
= 0
Drain-Source ON Resistance
r
DS (ON)
--
3.5
5.0
W
V
GS
= 10V, I
D
= 0.2mA
Thermal Resistance, Junction to Ambient Air
R
qJA
--
--
150
K/W
Note 1
Forward Transconductance
g
FS
--
200
--
m
m
V
DS
= 10V, I
D
= 0.2A, f = 1MHz
Input Capacitance
C
iss
--
60
--
pF
V
DS
= 10V, V
GS
= 0, f =1.0MHz
Turn On Time
Turn Off Time
t
on
t
off
--
5.0
15
--
ns
V
GS
= 10V, V
DS
= 10V,
R
D
= 100W
Electrical Characteristics
@ T
A
= 25C unless otherwise specified
D
S21802 Rev. D-3 2 of 2 BS170
0
500
I , DRAIN CURRENT (mA)
Fig. 6 Transconductance vs. Drain Current
D
g
,
FOR
W
ARD
TRANSCONDUCT
ANCE
(m
)
fs
m
0
100
200
300
400
500
200
300
100
400
Pulse test width 80s;
pulse duty factor 1%
V
= 10V
DS
0
100
200
T , AMBIENT TEMPERATURE (C)
Fig. 1. Power Derating Curve
A
P
,
POWER
DISSIP
A
TION
(W)
d
0
0.2
0.4
0.6
0.8
1
(See Note 1)
0
10
V , GATE-SOURCE VOLTAGE (V)
Fig. 5. Transconductance vs Gate-Source Voltage
GS
g
,
FOR
W
ARD
TRANSCONDUCT
ANCE
(mm)
fs
100
200
300
400
500
4
6
2
8
V
= 10V
DS
0
Pulse test width 80s;
pulse duty factor 1%
0
100
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 2. Output Characteristics
DS
I
(ON),
DRAIN
SOURCE
ON
CURRENT
(A)
D
0.1
0.2
0.4
0.6
0.8
1
40
60
20
80
V
= 6V
GS
5V
3V
4V
7V
T = 25C
A
Pulse test width 80s;
pulse duty factor 1%
0
10
V , GATE-SOURCE VOLTAGE (V)
Fig. 4. Drain Current vs Gate-Source Voltage
GS
I
DRAIN
CURRENT
(A)
D,
0
0.2
0.4
0.6
0.8
1.0
4
6
2
8
T = 25C
A
Pulse test width 80s;
pulse duty factor 1%
V
= 10V
DS
0
10
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 3. Saturation Characteristics
DS
I
(ON),
DRAIN
SOURCE
ON-CURRENT
(mA)
D
0
100
200
300
400
500
4
6
2
8
V
= 5V
GS
3.5V
3.0V
T = 25C
A
4.0V
4.5V
Pulse test width 80s;
pulse duty factor 1%
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