DS30380 Rev. 4 - 2
1 of 5
BSS8402DW
www.diodes.com
Diodes Incorporated
BSS8402DW
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD
EFFECT TRANSISTOR
Features
Low On-Resistance: R
DS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair
Also Available in Lead Free Version
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
60
V
Drain-Gate Voltage R
GS
1.0MW
V
DGR
60
V
Gate-Source Voltage
Continuous
Pulsed
V
GSS
20
40
V
Drain Current (Note 1)
Continuous
Continuous @ 100C
Pulsed
I
D
115
73
800
mA
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Case: SOT-363, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Also Available in Lead Free Plating (Matte Tin
Finish). Please see Ordering Information,
Note 4, on Page 5
Terminal Connections: See Diagram
Marking: KNP (See Page 5)
Weight: 0.008 grams (approx.)
Mechanical Data
A
M
J
L
D
B C
H
K
G
F
D
2
S
2
G
2
D
1
G
1
S
1
S
2
D
2
Q
1
Q
2
D
1
S
1
G
2
G
1
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
a
0
8
All Dimensions in mm
TOP VIEW
Maximum Ratings N-CHANNEL - Q
1
, 2N7002 Section
@ T
A
= 25
C unless otherwise specified
Maximum Ratings - Total Device
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Value
Units
Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance, Junction to Ambient
R
qJA
625
C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
C
Maximum Ratings P-CHANNEL - Q
2
, BSS84 Section
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
-50
V
Drain-Gate Voltage R
GS
20KW
V
DGR
-50
V
Gate-Source Voltage
Continuous
V
GSS
20
V
Drain Current (Note 1)
Continuous
I
D
-130
mA
T
C
U
D
O
R
P
W
E
N
SPICE MODELS: BSS8402DW
DS30380 Rev. 4 - 2
2 of 5
BSS8402DW
www.diodes.com
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
BV
DSS
60
70
V
V
GS
= 0V, I
D
= 10
mA
Zero Gate Voltage Drain Current
@ T
C
= 25C
@ T
C
= 125C
I
DSS
1.0
500
A
V
DS
= 60V, V
GS
= 0V
Gate-Body Leakage
I
GSS
10
nA
V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(th)
1.0
2.5
V
V
DS
= V
GS
, I
D
=-250
mA
Static Drain-Source On-Resistance
@ T
j
= 25C
@ T
j
= 125C
R
DS (ON)
3.2
4.4
7.5
13.5
W
V
GS
= 5.0V, I
D
= 0.05A
V
GS
= 10V, I
D
= 0.5A
On-State Drain Current
I
D(ON)
0.5
1.0
A
V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance
g
FS
80
mS
V
DS
=10V, I
D
= 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
22
50
pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
11
25
pF
Reverse Transfer Capacitance
C
rss
2.0
5.0
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
7.0
20
ns
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150
W, V
GEN
= 10V,
R
GEN
= 25
W
Turn-Off Delay Time
t
D(OFF)
11
20
ns
Electrical Characteristics N-CHANNEL - Q
1
, 2N7002 Section
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
BV
DSS
-50
V
V
GS
= 0V, I
D
= -250A
Zero Gate Voltage Drain Current
I
DSS
-15
-60
-100
A
A
nA
V
DS
= -50V, V
GS
= 0V, T
J
= 25
C
V
DS
= -50V, V
GS
= 0V, T
J
= 125
C
V
DS
= -25V, V
GS
= 0V, T
J
= 25
C
Gate-Body Leakage
I
GSS
10
nA
V
GS
=
20V, V
DS
= 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(th)
-0.8
-2.0
V
V
DS
= V
GS
, I
D
= -1mA
Static Drain-Source On-Resistance
R
DS (ON)
10
W
V
GS
= -5V, I
D
= 0.100A
Forward Transconductance
g
FS
.05
S
V
DS
= -25V, I
D
= 0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
45
pF
V
DS
= -25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
25
pF
Reverse Transfer Capacitance
C
rss
12
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
10
ns
V
DD
= -30V, I
D
= -0.27A,
R
GEN
= 50
W, V
GS
= -10V
Turn-Off Delay Time
t
D(OFF)
18
ns
Electrical Characteristics P-CHANNEL - Q
2
, BSS84 Section
Note: 2. Short duration test pulse used to minimize self-heating effect.
@ T
A
= 25
C unless otherwise specified
T
C
U
D
O
R
P
W
E
N
DS30380 Rev. 4 - 2
3 of 5
BSS8402DW
www.diodes.com
0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
V
,
DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 On-Region Characteristics
V
= 10V
GS
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.1V
5.5V
10V
5.0V
2.1V
I
,
DRAIN-SOURCE
CURRENT
(A)
D
0
1
2
3
4
5
0
0.2
I , DRAIN CURRENT (A)
D
Fig. 2 On-Resistance vs Drain Current
V
= 5.0V
GS
T = 25
C
j
V
= 10V
GS
6
7
0.4
0.6
0.8
1.0
1.0
1.5
2.0
2.5
3.0
-55
-30
-5
20
45
70
95
120
145
T , JUNCTION TEMPERATURE (
C)
j
Fig. 3 On-Resistance vs Junction Temperature
V
= 10V,
GS
I = 200mA
D
0
V
, GATE TO SOURCE VOLTAGE (V)
GS
Fig. 4 On-Resistance vs. Gate-Source Voltage
I = 50mA
D
I = 500mA
D
1
2
3
4
5
6
0
2
4
6
8
10
12
14
16
18
0
2
1
4
3
0
0.2
0.4
0.6
0.8
1
V
G
A
T
E
S
OURCE
CURRENT
(V)
GS,
I , DRAIN CURRENT (A)
D
Fig. 5 Typical Transfer Characteristics
6
5
8
7
10
9
V
= 10V
DS
T = -55C
A
T = +25C
A
T = +125C
A
T = +75C
A
0
50
100
150
200
250
0
25
50
75
100
125
150
175
200
P,
P
O
WER
DISSIP
A
T
I
O
N(
m
W
)
d
T , AMBIENT TEMPERATURE (
C)
A
Fig. 6 Max Power Dissipation vs.
Ambient Temperature
N-CHANNEL - 2N7002 SECTION
T
C
U
D
O
R
P
W
E
N
DS30380 Rev. 4 - 2
4 of 5
BSS8402DW
www.diodes.com
T
C
U
D
O
R
P
W
E
N
P-CHANNEL - BSS84 SECTION
-0.0
-1.0
-0.8
-0.6
-0.4
-0.2
0
-2
-3
-4
-1
-8
-7
-6
-5
I
,
DRAIN
CURRENT
(A)
D
V
, GATE-TO-SOURCE VOLTAGE (V)
GS
Fig. 8, Drain Current vs. Gate Source Voltage
T = -55
C
A
T = 25
C
A
T = 125
C
A
0
600
500
400
300
200
100
0
2
1
5
4
3
I
,
DRAIN
SOURCE
CURRENT
(mA)
D
V
, DRAIN SOURCE (V)
DS
Fig. 7, Drain Source Current vs.
Drain Source Voltage
T = 25
C
A
V
= 5V
GS
4.5V
3.5V
3.0V
2.5V
0
3
6
9
12
15
-50
-25
0
25
50
125
100
75
150
T
,
JUNCTION TEMPERATURE (C)
J
Fig. 10, On-Resistance vs. Junction Temperature
V
= -10V
GS
I = -0.13A
D
0
1
2
4
5
3
6
8
7
10
9
0
1
2
3
4
5
V
, GATE TO SOURCE (V)
GS
Fig. 9, On Resistance vs. Gate Source Voltage
T
= 25
C
A
T = 125
C
A
0.0
5.0
10.0
-0.0
-0.2
-0.4
-0.6
-0.8
1.0
I , DRAIN CURRENT (A)
D
Fig. 11, On-Resistance vs. Drain Current
15.0
20.0
25.0
V
= -8V
GS
V
= -10V
GS
V
= -3V
GS
V
= -3.5V
GS
V
= -4V
GS
V
= -4.5V
GS
V
= -6V
GS
V
= -5V
GS
DS30380 Rev. 4 - 2
5 of 5
BSS8402DW
www.diodes.com
Ordering Information
Device
Packaging
Shipping
BSS8402DW-7
SOT-363
3000/Tape & Reel
Notes:
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
4. For Lead Free version (with Lead Free terminal finish) part number, please add "-F" suffix to part number above.
Example: BSS8402DW-7-F.
Marking Information
KNP
YM
KNP = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: R = 2004
M = Month ex: 9 = September
Date Code Key
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
(Note 3)
Year
2003
2004
2005
2006
2007
2008
2009
Code
P
R
S
T
U
V
W
T
C
U
D
O
R
P
W
E
N
PDF 
ZIP