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Электронный компонент: DCX122TH

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Pb
Lead-free
DS30429 Rev. 2 - 2
1 of 4
DCX (LO-R1) H
www.diodes.com
Diodes Incorporated
Epitaxial Planar Die Construction
Built-In Biasing Resistors
Lead Free By Design/RoHS Compliant (Note 3)
Features
Maximum Ratings NPN Section
@ T
A
= 25
C unless otherwise specified
A
M
L
B C
H
K
G
D
CXXYM
Mechanical Data
Case: SOT-563
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.005 grams (approx.)
T
C
U
D
O
R
P
W
E
N
R
1
R
1
R
2
R
2
R
1
R
1
R
1
, R
2
R
1
Only
DCX (LO-R1) H
COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL
SOT-563 DUAL SURFACE MOUNT TRANSISTOR
SOT-563
Dim
Min
Max
Typ
A
0.15
0.30
0.25
B
1.10
1.25
1.20
C
1.55
1.70
1.60
D
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
K
0.56
0.60
0.60
L
0.15
0.25
0.20
M
0.10
0.18
0.11
All Dimensions in mm
SCHEMATIC DIAGRAM, TOP VIEW
P/N
R1 (NOM) R2 (NOM) MARKING
DCX122LH
DCX142JH
DCX122TH
DCX142TH
0.22K
W
0.47K
W
0.22K
W
0.47K
W
10K
W
10K
W
OPEN
OPEN
C81
C82
C83
C84
Characteristic
Symbol
Value
Unit
Supply Voltage
V
CC
50
V
Input Voltage
DCX122LH
DCX142JH
V
IN
-5 to +6
-5 to +6
V
Input Voltage DCX122TH
DCX142TH
V
EBO (MAX)
5
V
Output Current All
I
C
100
mA
Power Dissipation (Note 1, 2)
P
d
150
mW
Thermal Resistance, Junction to Ambient Air (Note 1)
R
qJA
833
C/W
Operating and Storage and Temperature Range
T
j
, T
STG
-55 to +150
C
Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. NPN Section, PNP Section, or maximum combined.
3. No purposefully added lead.
SPICE MODELS: DCX122LH DCX142JH DCX122TH DCX142TH
DS30429 Rev. 2 - 2
2 of 4
DCX (LO-R1) H
www.diodes.com
Electrical Characteristics NPN Section R1, R2 Types
@ T
A
= 25
C unless otherwise specified
T
C
U
D
O
R
P
W
E
N
Maximum Ratings PNP Section
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Value
Unit
Supply Voltage
V
CC
-50
V
Input Voltage
DCX122LH
DCX142JH
V
IN
+5 to -6
+5 to -6
V
Input Voltage
DCX122TH
DCX142TH
V
EBO (MAX)
-5
V
Output Current All
I
C
-100
mA
Power Dissipation (Note 1, 2)
P
d
150
mW
Thermal Resistance, Junction to Ambient Air (Note 1)
R
qJA
833
C/W
Operating and Storage and Temperature Range
T
j
, T
STG
-55 to +150
C
Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. NPN Section, PNP Section, or maximum combined.
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Input Voltage
DCX122LH
DCX142JH
V
l(off)
0.3
0.3
V
V
CC
= 5V, I
O
= 100
mA
DCX122LH
DCX142JH
V
l(on)
2.0
2.0
V
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
Output Voltage
V
O(on)
0.3V
V
I
O
/I
l
= 5mA/0.25mA
Input Current
DCX122LH
DCX142JH
I
l
28
13
mA
V
I
= 5V
Output Current
I
O(off)
0.5
mA
V
CC
= 50V, V
I
= 0V
DC Current Gain
DDCX122LH
DDCX142JH
G
l
56
56
V
O
= 5V, I
O
= 10mA
Gain-Bandwidth Product*
f
T
200
MHz
V
CE
= 10V, I
E
= 5mA,
f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics NPN Section R1-Only
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BV
CBO
50
V
I
C
= 50
mA
Collector-Emitter Breakdown Voltage
BV
CEO
40
V
I
C
= 1mA
Emitter-Base Breakdown Voltage DCX122TH
DCX142TH
BV
EBO
5
V
I
E
= 50
mA
I
E
= 50
mA
Collector Cutoff Current
I
CBO
0.5
mA
V
CB
= 50V
Emitter Cutoff Current
DCX122TH
DCX142TH
I
EBO
0.5
0.5
mA
V
EB
= 4V
Collector-Emitter Saturation Voltage
V
CE(sat)
0.3
V
I
C
= 5mA, I
B
= 0.25mA
DC Current Transfer Ratio
DCX122TH
DCX142TH
h
FE
100
100
250
250
600
600
I
C
= 1mA, V
CE
= 5V
Gain-Bandwidth Product*
f
T
200
MHz
V
CE
= 10V, I
E
= -5mA,
f = 100MHz
* Transistor - For Reference Only
DS30429 Rev. 2 - 2
3 of 4
DCX (LO-R1) H
www.diodes.com
T
C
U
D
O
R
P
W
E
N
* Transistor - For Reference Only
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Input Voltage
DCX122LH
DCX142JH
V
l(off)
-0.3
-0.3
V
V
CC
= -5V, I
O
= -100
mA
DCX122LH
DCX142JH
V
l(on)
-2.0
-2.0
V
V
O
= -0.3V, I
O
= -20mA
V
O
= -0.3V, I
O
= -20mA
Output Voltage
V
O(on)
-0.3V
V
I
O
/I
l
= -5mA/-0.25mA
Input Current
DCX122LH
DCX142JH
I
l
-28
-13
mA
V
I
= -5V
Output Current
I
O(off)
-0.5
mA
V
CC
= -50V, V
I
= 0V
DC Current Gain
DCX122LH
DCX142JH
G
l
56
56
V
O
= -5V, I
O
= -10mA
Gain-Bandwidth Product*
f
T
200
MHz
V
CE
= -10V, I
E
= -5mA,
f = 100MHz
Electrical Characteristics PNP Section R1, R2 Types
@ T
A
= 25
C unless otherwise specified
Electrical Characteristics R1-Only Types
@ T
A
= 25
C unless otherwise specified
* Transistor - For Reference Only
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-50
V
I
C
= -50
mA
Collector-Emitter Breakdown Voltage
BV
CEO
-40
V
I
C
= -1mA
Emitter-Base Breakdown Voltage DCX122TH
DCX142TH
BV
EBO
-5
V
I
E
= -50
mA
I
E
= -50
mA
Collector Cutoff Current
I
CBO
-0.5
mA
V
CB
= -50V
Emitter Cutoff Current
DCX122TH
DCX142TH
I
EBO
-0.5
-0.5
mA
V
EB
= -4V
Collector-Emitter Saturation Voltage
V
CE(sat)
-0.3
V
I
C
= -5mA, I
B
= -0.25mA
DC Current Transfer Ratio
DCX122TH
DCX142TH
h
FE
100
100
250
250
600
600
I
C
= -1mA, V
CE
= -5V
Gain-Bandwidth Product*
f
T
200
MHz
V
CE
= -10V, I
E
= 5mA,
f = 100MHz
Ordering Information
(Note 4)
Device
Packaging
Shipping
DCX122LH-7
SOT-563
3000/Tape & Reel
DCX142JH-7
SOT-563
3000/Tape & Reel
DCX122TH-7
SOT-563
3000/Tape & Reel
DCX142TH-7
SOT-563
3000/Tape & Reel
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
CXXYM
CXX = Product Type Marking Code (See Page 1)
YM = Date Code Marking
Y = Year ex: P = 2003
M = Month ex: 9 = September
Date Code Key
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Year
2002
2003
2004
2005
2006
2007
2008
2009
Code
N
P
R
S
T
U
V
W
DS30429 Rev. 2 - 2
4 of 4
DCX (LO-R1) H
www.diodes.com
T
C
U
D
O
R
P
W
E
N
-50
0
50
100
150
250
200
150
50
100
0
T , AMBIENT TEMPERATURE (
C)
A
Fig. 1 Derating Curve - Total
P
,
POWER
DISSIP
A
TION
(mW)
d