DS30420 Rev. 1 - 2
1 of 4
DDA (xxxx) H
www.diodes.com
Diodes Incorporated
Epitaxial Planar Die Construction
Complementary NPN Types Available
(DDC)
Built-In Biasing Resistors
Lead-Free Device
Characteristic
Symbol
Value
Unit
Supply Voltage
V
CC
50
V
Input Voltage
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
DDA143TH
DDA114TH
V
IN
+10 to -40
+10 to -40
+10 to -30
+6 to -40
+5 to -12
+10 to -40
+5 Vmax
+5 Vmax
V
Output Current DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
DDA143TH
DDA114TH
I
O
-30
-30
-100
-70
-100
-50
-100
-100
mA
Output Current
All
I
C
(Max)
-100
mA
Power Dissipation
P
d
150
mW
Thermal Resistance, Junction to Ambient Air (Note 3)
R
qJA
833
C/W
Operating and Storage and Temperature Range
T
j
, T
STG
-55 to +150
C
Features
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
A
M
L
B C
H
K
G
D
PXXYM
Mechanical Data
Case: SOT-563, Molded Plastic
Case material - UL Flammability Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Finish - Matte Tin Solderable
per MIL-STD-202, Method 208 (Note 2)
Terminal Connections: See Diagram
Weight: 0.005 grams (approx.)
T
C
U
D
O
R
P
W
E
N
P/N
R1
R2
MARKING
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
DDA143TH
DDA114TH
22K
W
47K
W
4.7K
W
10K
W
2.2K
W
10K
W
4.7K
W
10K
W
22K
W
47K
W
4.7K
W
47K
W
47K
W
10K
W
-
-
P17
P20
P08
P14
P06
P13
P07
P12
R
1
R
1
R
2
R
2
R
1
R
1
R
1
, R
2
R
1
Only
SCHEMATIC DIAGRAM, TOP VIEW
DDA (xxxx) H
PNP PRE-BIASED SMALL SIGNAL SOT-563
DUAL SURFACE MOUNT TRANSISTOR
SOT-563
Dim
Min
Max
Typ
A
0.15
0.30
0.25
B
1.10
1.25
1.20
C
1.55
1.70
1.60
D
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
K
0.56
0.60
0.60
L
0.15
0.25
0.20
M
0.10
0.18
0.11
All Dimensions in mm
SEE NOTE 1
Note: 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180
rotated, or mixed (both ways).
2. If lead-bearing terminal plating is required, please contact your Diodes Inc. sales representative for availability
and minimum order details.
3. Mounted on FR4 Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
SPICE MODELS: DDA124EH DDA144EH DDA143EH DDA114YH DDA123JH DDA114EH DDA143TH DDA114TH
DS30420 Rev. 1 - 2
2 of 4
DDA (xxxx) H
www.diodes.com
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Input Voltage
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
V
l(off)
-0.5
-0.5
-0.5
-0.3
-0.5
-0.5
-1.1
-1.1
-1.1
--
--
-1.1
V
V
CC
= -5V, I
O
= -100
mA
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
V
l(on)
-1.9
-1.9
-1.9
--
--
-1.9
-3.0
-3.0
-3.0
-1.4
-1.1
-3.0
V
O
= -0.3V, I
O
= -5mA
V
O
= -0.3V, I
O
= -2mA
V
O
= -0.3V, I
O
= -20mA
V
O
= -0.3V, I
O
= -1mA
V
O
= -0.3V, I
O
= -5mA
V
O
= -0.3V, I
O
= -10mA
Output Voltage
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
V
O(on)
-0.1
-0.3
V
I
O
/I
l
= -10mA / -0.5mA
I
O
/I
l
= -10mA / -0.5mA
I
O
/I
l
= -10mA / -0.5mA
I
O
/I
l
= -5mA / -0.25mA
I
O
/I
l
= -5mA / -0.25mA
I
O
/I
l
= -10mA / -0.5mA
Input Current
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
I
l
-0.36
-0.18
-1.8
-0.88
-3.6
-0.88
mA
V
I
= -5V
Output Current
I
O(off)
-0.5
mA
V
CC
= -50V, V
I
= -0V
DC Current Gain
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
G
l
56
68
20
68
80
30
V
O
= -5V, I
O
= -5mA
V
O
= -5V, I
O
= -5mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -5mA
Gain-Bandwidth Product*
f
T
250
MHz
V
CE
= -10V, I
E
= -5mA,
f = 100MHz
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
T
C
U
D
O
R
P
W
E
N
* Transistor - For Reference Only
Characteristic (DDA143TH & DDA114TH only)
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-50
V
I
C
= -50
mA
Collector-Emitter Breakdown Voltage
BV
CEO
-50
V
I
C
= -1mA
Emitter-Base Breakdown Voltage
BV
EBO
-5
V
I
E
= -50
mA
Collector Cutoff Current
I
CBO
-0.5
mA
V
CB
= -50V
Emitter Cutoff Current
I
EBO
-0.5
mA
V
EB
= -4V
Collector-Emitter Saturation Voltage
V
CE(sat)
-0.3
V
I
C
/I
B
= -2.5mA / -0.25mA DDA143TH
I
C
/I
B
= -1mA / -0.1mA DDA114TH
DC Current Transfer Ratio
h
FE
100
250
600
I
C
= -1mA, V
CE
= -5V
Gain-Bandwidth Product*
f
T
250
MHz
V
CE
= -10V, I
E
= 5mA, f = 100MHz
DS30420 Rev. 1 - 2
4 of 4
DDA (xxxx) H
www.diodes.com
T
C
U
D
O
R
P
W
E
N
1
1
10
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Input Voltage vs. Collector Current
V = 0.2
O
V
,
INPUT
VOL
T
AGE
(
V)
in
-25C
25C
75
C
0.01
0.1
1
10
100
0
1
2
3
4
8
9
10
I
,
COLLECT
OR
CURRENT
(
mA)
C
V , INPUT VOLTAGE (V)
in
Fig. 5 Collector Current Vs. Input Voltage
75
C
-25C
5
6
7
25C
V = 5V
O
0
2
4
6
10
0
20
30
C
,
C
AP
A
C
IT
AN
C
E
(
pF
)
OB
V , REVERSE BIAS VOLTAGE (V)
R
Fig. 4 Output Capacitance
12
10
5
15
25
8
I = 0mA
E
10
1000
100
1
1
10
100
h
,
DC
CURRENT
GAIN
(NORMALIZED)
FE
I , COLLECTOR CURRENT (mA)
C
Fig. 3 DC Current Gain
V
= 10
CE
75
C
-25
C
25
C
0.001
0.01
0.1
1
0
10
20
30
40
50
V
,
MAXIMUM
C
OLLECT
OR
VOL
T
AGE
(V)
CE(SA
T
)
I , COLLECTOR CURRENT (mA)
C
Fig. 2 V
vs. I
CE(SAT)
C
I /I
= 10
C B
-25
C
75
C
25
C
-50
0
50
100
150
250
200
150
50
100
0
T , AMBIENT TEMPERATURE (
C)
A
Fig. 1 Derating Curve
P
,
POWER
D
ISSIP
A
TION
(mW)
d
TYPICAL CURVES - DDA143EH
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