DS30383 Rev. 1 - 2
1 of 3
DDTB (xxxx) U
www.diodes.com
DDTB
(xxxx)
U
PNP PRE-BIASED 500 mA SOT-323
SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary NPN Types Available
(DDTD)
Built-In Biasing Resistors, R1, R2
Features
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
A
M
J
L
F
D
B C
H
K
G
2
1
3
IN
GND
OUT
Mechanical Data
Case: SOT-323, Molded Plastic
Case material - UL Flammability Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: Date Code and Marking Code
(See Diagrams & Page 3)
Weight: 0.006 grams (approx.)
Ordering Information (See Page 3)
T
C
U
D
O
R
P
W
E
N
(2) IN
R
1
R
2
GND (1)
OUT (3)
P/N
R1 (NOM) R2 (NOM)
MARKING
DDTB113EU
DDTB123EU
DDTB143EU
DDTB114EU
DDTB122JU
DDTB113ZU
DDTB123YU
DDTB133HU
DDTB123TU
DDTB143TU
DDTB114TU
DDTB114GU
1K
2.2K
4.7K
10K
0.22K
1K
2.2K
3.3K
2.2K
4.7K
10K
0
1K
2.2K
4.7K
10K
4.7K
10K
10K
10K
OPEN
OPEN
OPEN
10K
P60
P61
P62
P63
P64
P65
P66
P67
P69
P70
P71
P72
Characteristic
Symbol
Value
Unit
Supply Voltage, (3) to (1)
V
CC
-50
V
Input Voltage, (2) to (1)
DDTB113EU
DDTB123EU
DDTB143EU
DDTB114EU
DDTB122JU
DDTB113ZU
DDTB123YU
DDTB133HU
V
IN
+10 to -10
+10 to -12
+10 to -30
+10 to -40
+5 to -5
+5 to -10
+5 to -12
+6 to -20
V
Input Voltage, (1) to (2)
DDTB123TU
DDTB143TU
DDTB114TU
DDTB114GU
V
EBO (MAX)
-5
V
Output Current All
I
C
-500
mA
Power Dissipation
P
d
200
mW
Thermal Resistance, Junction to Ambient Air (Note 1)
R
qJA
625
C/W
Operating and Storage and Temperature Range
T
j
, T
STG
-55 to +150
C
SOT-323
Dim
Min
Max
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
a
0
8
All Dimensions in mm
Note:
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
DS30383 Rev. 1 - 2
2 of 3
DDTB (xxxx) U
www.diodes.com
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Input Voltage
DDTB113EU
DDTB123EU
DDTB143EU
DDTB114EU
DDTB122JU
DDTB113ZU
DDTB123YU
DDTB133HU
V
l(off)
-0.5
-0.5
-0.5
-0.5
-0.5
-0.3
-0.3
-0.3
V
V
CC
= -5V, I
O
= -100
mA
DDTB113EU
DDTB123EU
DDTB143EU
DDTB114EU
DDTB122JU
DDTB113ZU
DDTB123YU
DDTB133HU
V
l(on)
-3.0
-3.0
-3.0
-3.0
-3.0
-2.0
-2.0
-2.0
V
V
O
= -0.3V, I
O
= -20mA
V
O
= -0.3V, I
O
= -20mA
V
O
= -0.3V, I
O
= -20mA
V
O
= -0.3V, I
O
= -10mA
V
O
= -0.3V, I
O
= -30mA
V
O
= -0.3V, I
O
= -20mA
V
O
= -0.3V, I
O
= -20mA
V
O
= -0.3V, I
O
= -20mA
Output Voltage
V
O(on)
-0.3V
V
I
O
/I
l
= -50mA/-2.5mA
Input Current
DDTB113EU
DDTB123EU
DDTB143EU
DDTB114EU
DDTB122JU
DDTB113ZU
DDTB123YU
DDTB133HU
I
l
-7.2
-3.8
-1.8
-0.88
-28
-7.2
-3.6
-2.4
mA
V
I
= -5V
Output Current
I
O(off)
-0.5
mA
V
CC
= -50V, V
I
= 0V
DC Current Gain
DDTB113EU
DDTB123EU
DDTB143EU
DDTB114EU
DDTB122JU
DDTB113ZU
DDTB123YU
DDTB133HU
G
l
33
39
47
56
47
56
56
56
V
O
= -5V, I
O
= -50mA
Gain-Bandwidth Product*
f
T
200
MHz
V
CE
= -10V, I
E
= -5mA,
f = 100MHz
Electrical Characteristics R1, R2 Types
@ T
A
= 25
C unless otherwise specified
T
C
U
D
O
R
P
W
E
N
* Transistor - For Reference Only
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-50
V
I
C
= -50
mA
Collector-Emitter Breakdown Voltage
BV
CEO
-40
V
I
C
= -1mA
Emitter-Base Breakdown Voltage DDTB123TU
DDTB143TU
DDTB114TU
DDTB114GU
BV
EBO
-5
V
I
E
= -50
mA
I
E
= -50
mA
I
E
= -50
mA
I
E
= -720
mA
Collector Cutoff Current
I
CBO
-0.5
mA
V
CB
= -50V
Emitter Cutoff Current
DDTB123TU
DDTB143TU
DDTB114TU
DDTB114GU
I
EBO
-300
-0.5
-0.5
-0.5
-580
mA
V
EB
= -4V
Collector-Emitter Saturation Voltage
V
CE(sat)
-0.3
V
I
C
= -50mA, I
B
= -2.5mA
DC Current Transfer Ratio
DDTB123TU
DDTB143TU
DDTB114TU
DDTB114GU
h
FE
100
100
100
56
250
250
250
600
600
600
I
C
= -5mA, V
CE
= -5V
Gain-Bandwidth Product*
f
T
200
MHz
V
CE
= -10V, I
E
= 5mA,
f = 100MHz
Electrical Characteristics R1-Only, R2-Only Types
@ T
A
= 25
C unless otherwise specified
* Transistor - For Reference Only
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