DS30384 Rev. 1 - 2
1 of 3
DDTD (xxxx) C
www.diodes.com
DDTD
(xxxx)
C
NPN PRE-BIASED 500 mA SOT-23
SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary PNP Types Available
(DDTB)
Built-In Biasing Resistors, R1, R2
Features
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
A
E
J
L
TOP VIEW
M
B C
H
G
D
K
OUT
3
2
1
IN
GND
Mechanical Data
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: Date Code and Marking Code
(See Diagrams & Page 3)
Weight: 0.008 grams (approx.)
Ordering Information (See Page 3)
T
C
U
D
O
R
P
W
E
N
(2) IN
R
1
R
2
GND (1)
OUT (3)
P/N
R1 (NOM) R2 (NOM)
MARKING
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
1K
2.2K
4.7K
10K
0.22K
1K
2.2K
3.3K
2.2K
4.7K
10K
0
1K
2.2K
4.7K
10K
4.7K
10K
10K
10K
OPEN
OPEN
OPEN
10K
N60
N61
N62
N63
N64
N65
N66
N67
N69
N70
N71
N72
Characteristic
Symbol
Value
Unit
Supply Voltage, (3) to (1)
V
CC
50
V
Input Voltage, (2) to (1)
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
V
IN
-10 to +10
-10 to +12
-10 to +30
-10 to +40
-5 to +5
-5 to +10
-5 to +12
-6 to +20
V
Input Voltage, (1) to (2)
DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
V
EBO (MAX)
5
V
Output Current All
I
C
500
mA
Power Dissipation
P
d
200
mW
Thermal Resistance, Junction to Ambient Air (Note 1)
R
qJA
625
C/W
Operating and Storage and Temperature Range
T
j
, T
STG
-55 to +150
C
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.89
1.00
L
0.45
0.61
M
0.085
0.110
a
0
8
All Dimensions in mm
Note:
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
DS30384 Rev. 1 - 2
2 of 3
DDTD (xxxx) C
www.diodes.com
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Input Voltage
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
V
l(off)
0.5
0.5
0.5
0.5
0.5
0.3
0.3
0.3
V
V
CC
= 5V, I
O
= 100
mA
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
V
l(on)
3.0
3.0
3.0
3.0
3.0
2.0
2.0
2.0
V
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 10mA
V
O
= 0.3V, I
O
= 30mA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
Output Voltage
V
O(on)
0.3V
V
I
O
/I
l
= -50mA/-2.5mA
Input Current
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
I
l
7.2
3.8
1.8
0.88
4.5
7.2
3.6
2.4
mA
V
I
= 5V
Output Current
I
O(off)
0.5
mA
V
CC
= 50V, V
I
= 0V
DC Current Gain
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
G
l
33
39
47
56
47
56
56
56
V
O
= 5V, I
O
= 50mA
Gain-Bandwidth Product*
f
T
200
MHz
V
CE
= 10V, I
E
= 5mA,
f = 100MHz
Electrical Characteristics R1, R2 Types
@ T
A
= 25
C unless otherwise specified
T
C
U
D
O
R
P
W
E
N
* Transistor - For Reference Only
Electrical Characteristics R1-Only, R2-Only Types
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BV
CBO
50
V
I
C
= 50
mA
Collector-Emitter Breakdown Voltage
BV
CEO
40
V
I
C
= 1mA
Emitter-Base Breakdown Voltage DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
BV
EBO
5
V
I
E
= 50
mA
I
E
= 50
mA
I
E
= 50
mA
I
E
= 720
mA
Collector Cutoff Current
I
CBO
0.5
mA
V
CB
= 50V
Emitter Cutoff Current
DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
I
EBO
300
0.5
0.5
0.5
580
mA
V
EB
= 4V
Collector-Emitter Saturation Voltage
V
CE(sat)
0.3
V
I
C
= 50mA, I
B
= 2.5mA
DC Current Transfer Ratio
DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
h
FE
100
100
100
56
250
250
250
600
600
600
I
C
= 5mA, V
CE
= 5V
Gain-Bandwidth Product*
f
T
200
MHz
V
CE
= 10V, I
E
= -5mA,
f = 100MHz
* Transistor - For Reference Only
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