DS30311 Rev. 3 - 2
1 of 3
DMMT3904W
www.diodes.com
Epitaxial Planar Die Construction
Intrinsically Matched NPN Pair (Note 1)
Small Surface Mount Package
2% Matched Tolerance, h
FE
, V
CE(SAT)
, V
BE(SAT)
1% Matched Tolerance, Available (Note 2)
Features
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
Mechanical Data
Case: SOT-363, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 2): K4A
Marking Code & Date Code
Information: See Page 2
Weight: 0.015 grams (approx.)
DMMT3904W
MATCHED NPN SMALL SIGNAL SURFACE MOUNT
TRANSISTOR
Characteristic
Symbol
DMMT3904W
Unit
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6.0
V
Collector Current - Continuous
I
C
200
mA
Power Dissipation (Note 3)
P
d
200
mW
Thermal Resistance, Junction to Ambient (Note 3)
R
qJA
625
C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
C
Notes: 1. Built with adjacent die from a single wafer.
2. Contact the Diodes, Inc. Sales department.
3. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
T
C
U
D
O
R
P
W
E
N
Device
Packaging
Shipping
DMMT3904W-7
SOT-363
3000/Tape & Reel
Ordering Information
(Note 4)
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
a
8
All Dimensions in mm
A
M
J
L
D
B C
H
K
G
F
C
2
E
2
E
1
B
2
B
1
C
1
DS30311 Rev. 3 - 2
2 of 3
DMMT3904W
www.diodes.com
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
V
(BR)CBO
60
V
I
C
= 10
mA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
40
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
6.0
V
I
E
= 10
mA, I
C
= 0
Collector Cutoff Current
I
CEX
50
nA
V
CE
= 30V, V
EB(OFF)
= 3.0V
Base Cutoff Current
I
BL
50
nA
V
CE
= 30V, V
EB(OFF)
= 3.0V
ON CHARACTERISTICS (Note 5)
DC Current Gain (Note 6)
h
FE
40
70
100
60
30
300
I
C
= 100A, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage (Note 6)
V
CE(SAT)
0.20
0.30
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage (Note 6)
V
BE(SAT)
0.65
0.85
0.95
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
4.0
pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
8.0
pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
1.0
10
k
W
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
h
re
0.5
8
x 10
-4
Small Signal Current Gain
h
fe
100
400
Output Admittance
h
oe
1.0
40
mS
Current Gain-Bandwidth Product
f
T
300
MHz
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
Noise Figure
NF
5.0
dB
V
CE
= 5.0V, I
C
= 100
mA,
R
S
= 1.0k
W, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
35
ns
V
CC
= 3.0V, I
C
= 10mA,
V
BE(off)
= -0.5V, I
B1
= 1.0mA
Rise Time
t
r
35
ns
Storage Time
t
s
200
ns
V
CC
= 3.0V, I
C
= 10mA,
I
B1
= I
B2
= 1.0mA
Fall Time
t
f
50
ns
Notes:
5. Short duration test pulse used to minimize self-heating effect.
6. The DC current gain, h
FE
, (matched at I
C
= 10mA and V
CE
= 1.0V) Collector Emitter Saturation Voltage, V
CE(SAT)
, and Base
Emitter Saturation Voltage, V
BE(SAT)
are matched with typical matched tolerances of 1% and maximum of 2%.
T
C
U
D
O
R
P
W
E
N
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Date Code Key
KJG = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K4A
YM
Marking Information
Year
2002
2003
2004
2005
2006
2007
2008
Code
N
P
R
S
T
U
V
DS30311 Rev. 3 - 2
3 of 3
DMMT3904W
www.diodes.com
T
C
U
D
O
R
P
W
E
N
0.1
1
10
0.1
1
10
100
1000
V
,
BASE-EMITTER
(
V)
BE(SA
T)
SA
TURA
TION
V
OL
T
A
GE
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
I
C
I
B
= 10
0.01
0.1
1
0.1
1
10
100
1000
V
,
COLLECT
O
R-EMITTER
(
V)
CE(SA
T
)
SA
TURA
TION
V
OL
T
A
GE
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Typical Collector-Emitter
Saturation Voltage vs. Collector Current
I
C
I
B
= 10
1
10
1000
100
0.1
1
10
1000
100
h
,
DC
CURRENT
GAIN
FE
I , COLLECTOR CURRENT (mA)
C
Fig. 3, Typical DC Current Gain vs
Collector Current
T = -25C
A
T = +25C
A
T = 125C
A
V
= 1.0V
CE
0
5
15
10
0.1
1
10
100
C
,
INPUT
C
AP
ACIT
ANCE
(pF)
IBO
C
,
OUTPUT
CAP
A
CIT
A
NCE
(
pF)
OBO
V
, COLLECTOR-BASE VOLTAGE (V)
CB
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
Cibo
Cobo
f = 1MHz
0
50
25
50
75
100
125
150
175
200
P
,
POWER
D
ISSIP
A
TION
(mW)
D
T , AMBIENT TEMPERATURE (C)
A
Fig. 1, Max Power Dissipation vs
Ambient Temperature
100
150
200
0
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