DS30388 Rev. 1 - 1
1 of 5
DMN3210
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DMN3210
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
Low Gate Threshold Voltage
Ultra Low On-Resistance
Low Input/Output Capacitance
Low Input/Output Leakage
Fast Switching Speed
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
DMN3210
Units
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GSS
12
V
Drain Current (Note 1)
Continuous
I
D
1.7
A
Pulsed Drain Current (Note 3)
I
DM
15
A
Total Power Dissipation (Note 1)
P
d
540
mW
Thermal Resistance, Junction to Ambient (Note 1) t
10s
R
qJA
230
C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
C
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: U0, See Page 5
Weight: 0.008 grams (approx.)
Ordering Information, See page 5
Mechanical Data
T
C
U
D
O
R
P
W
E
N
Note: 1. Per mounting conditions described in Note 2.
2. The value of R
qJA
is measured with the device mounted on 1 in
2
FR-4 PC board with 2 oz. Copper, in a still air environment at
T
A
= 25
C. The current rating is based on the t 10s Thermal Resistance rating.
3. Repetitive Rating, pulse width limited by junction temperature.
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0
8
All Dimensions in mm
A
E
J
L
TOP VIEW
M
B
C
H
G
D
K
D
G
S
Source
Gate
Drain
UNDER DEVELOPMENT
DS30388 Rev. 1 - 1
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DMN3210
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Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV
DSS
30
V
I
D
= 250
mA, V
GS
= 0V
Zero Gate Voltage Drain Current T
J
= 25
C
T
J
= 55
C
I
DSS
1
5
mA
V
DS
= 24V, V
GS
= 0V
Gate-Body Leakage Current
I
GSS
100
nA
V
DS
= 0V, V
GS
= +12V
Gate Threshold Voltage
V
GS(th)
0.6
1
1.4
V
V
DS
= V
GS
, I
D
= 250
mA
On State Drain Current
I
D (ON)
10
A
V
GS
= 4.5V, V
DS
= 5V
Static Drain-Source On-Resistance
R
DS (ON)
70
80
115
85
100
140
m
W
V
GS
= 10V, I
D
= 4A
V
GS
= 4.5V, I
D
= 3A
V
GS
= 2.5V, I
D
= 2A
Forward Transconductance
g
FS
8
S
V
DS
= 5V, I
D
= 4A
Diode Forward Voltage
V
SD
0.8
1
V
I
S
= 1A, V
GS
= 0V
Maximum Body-Diode Continuous Current
I
S
2.5
A
DYNAMIC PARAMETERS
Input Capacitance
C
iss
390
pF
V
GS
= 0V, V
DS
= 15V, f = 1MHz
Output Capacitance
C
oss
54.5
pF
Reverse Transfer Capacitance
C
rss
41
pF
Gate Resistance
R
g
3
W
V
GS
= 0V, V
DS
= 0V, f = 1MHz
SWITCHING PARAMETERS
Total Gate Charge
Q
g
0.6
nC
V
GS
= 4.5V, V
DS
= 15V, I
D
= 4A
Gate Source Charge
Q
gs
1.38
nC
Gate Drain Charge
Q
gd
4.34
nC
Turn-On Delay Time
t
D(on)
3.3
ns
V
GS
= 10V, V
DS
= 15V,
R
L
= 3.75
W, R
GEN
= 6
W
Turn-On Rise Time
t
r
1
ns
Turn-Off Delay Time
t
D(off)
21.7
ns
Turn-Off Fall Time
t
f
2.1
ns
Body Diode Reverse Recovery Time
t
rr
12
ns
I
F
= 4A, di/dt = 100A/
ms
Body Diode Reverse Recovery Charge
Q
rr
6.3
nC
I
F
= 4A, di/dt = 100A/
ms
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Note: 4. The static characteristics in Figures 1-6, 12, 14 are obtained using 80
ms pulses, duty cycle 0.5% max.
5. These tests are performed with device mounted on 1 in
2
FR-4 PC board with 2 oz. copper, in a still air environment at T
A
= 25
C.
The SOA curve provides a single pulse rating.
T
C
U
D
O
R
P
W
E
N
UNDER DEVELOPMENT
DS30388 Rev. 1 - 1
3 of 5
DMN3210
www.diodes.com
0.0
0.4
0.8
1.0
1.2
I
R
EVERSE
DRAIN
C
URRENT
(A)
S,
V
BODY DIODE FORWARD VOLTAGE (V)
SD,
Fig. 6 Body-Diode Forward Voltage Variation with
Source Current and Temperature
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-05
1.0E-04
0.2
0.6
T = 25C
J
T = 125C
J
0
200
0
2
6
8
10
V
, GATE-SOURCE VOLTAGE (V)
GS
Fig. 5 On-Resistance vs. Gate-Source Voltage
I = 2A
D
4
50
100
150
T = 125C
J
T = 25C
J
0.8
1
1.2
0
50
125
150
175
NORMALIZED
O
N-RESIST
ANCE
T , JUNCTION TEMPERATURE (C)
T
Fig. 4 On-Resistance vs. Junction Temperature
1.4
1.6
1.8
25
75
100
V
= 4.5V
GS
V
= 2.5V
GS
I = 2A
D
V
= 10V
GS
25
50
0
2
6
8
10
I , DRAIN CURRENT (A)
D
Fig. 3 On-Resistance vs. Drain Current and Gate Voltage
75
100
125
150
4
V
= 2.5V
GS
V
= 10V
GS
V
= 4.5V
GS
0
2
4
0
1
2.5
3
3.5
I
DRAIN-SOURCE
CURRENT
(
A)
D,
V
, GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Transfer Characteristics
6
8
10
0.5
1.5
2
T = 125C
J
T = 25C
J
V
= 2.5V
DS
0
15
0
1
3
4
5
I
,
DRAIN-SOURCE
CURRENT
(A)
D
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 On-Region Characteristics
V
= 2V
GS
V
= 3V
GS
V
= 10V
GS
V
= 2.5V
GS
V
= 4.5V
GS
2
12
3
6
9
T
C
U
D
O
R
P
W
E
N
UNDER DEVELOPMENT
DS30388 Rev. 1 - 1
4 of 5
DMN3210
www.diodes.com
T
C
U
D
O
R
P
W
E
N
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
PULSE WIDTH (s)
Fig. 11 Normalized Maximum Transient Thermal Impedance
1000
T
on
T
off
P
D
In descending order
D = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
5
0
10
15
20
0.001
0.01
0.1
1
10
1000
100
P
PEAK
T
RANSIENT
POWER,
(W)
PK,
PULSE WIDTH (s)
Fig. 10 Single Pulse Power Rating Junction-to
Ambient (Note 5)
T
= 150
C
J(MAX)
T = 25
C
A
0.1
1.0
10
100
0.1
1
10
100
V
DRAIN-SOURCE VOLTAGE (V)
DS,
Fig. 9 Maximum Forward Biased Safe
Operating Area (Note 5)
I
,
DRAIN
C
URRENT
(
A
)
D
T = 25
C
A
T
= 150
C
J(MAX)
1ms
DC
R
Limited
DS(ON)
0.1s
1s
10s
10ms
0
5
0
1
3
4
5
V
,
GA
TE-SOURCE
VOL
T
AGE
(
V)
GS
Q GATE CHARGE, (nC)
G,
Fig. 7 Gate-Charge Characteristics
V
= 15V
DS
I = 2.8A
D
2
4
1
2
3
0
100
200
300
400
0
5
CAP
A
CIT
A
NCE
(pF)
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 8 Capacitance Characteristics
500
600
10
15
25
20
30
Crss
Ciss
Coss
UNDER DEVELOPMENT
DS30388 Rev. 1 - 1
5 of 5
DMN3210
www.diodes.com
Marking Information
U0WXY
U0 = Product Type Marking Code
W = Week and Year Code Marking
XY = Lot Code Marking
Y = Assembly Location, Diodes China
Ordering Information
(Note 6)
Device
Packaging
Shipping
DMN3210-7
SOT-23
3000/Tape & Reel
Notes:
6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
T
C
U
D
O
R
P
W
E
N
Week Code Key
Week
0 - 1
2 - 3
4 - 5
6 - 7
8 - 9
10 - 11
12 - 13
14 - 15
16 - 17
Code
A
B
C
D
E
F
G
H
J
Week
18 - 19
20 - 21
22 - 23
24 - 25
26 - 27
28 - 29
30 - 31
32 - 33
34 - 35
Code
K
L
N
O
P
R
S
T
U
Week
36 - 37
38 - 39
40 - 41
42 - 43
44 - 45
46 - 47
48 - 49
50 - 51
52 - 53
Code
V
X
Y
Z
1
2
3
4
5
Year Code Key
Year
2002
2003
2004
2005
Code
W
W
W
W
UNDER DEVELOPMENT
PDF 
ZIP