Lead-free Green
DS30652 Rev. 2 - 2
1 of 4
DMN601K
www.diodes.com
Diodes Incorporated
DMN601K
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
60
V
Gate-Source Voltage
V
GSS
20
V
Drain Current (Note 1)
Continuous
Pulsed (Note 3)
I
D
300
800
mA
Total Power Dissipation (Note 1)
P
d
350
mW
Thermal Resistance, Junction to Ambient
R
JA
357
C/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
C
Note: 1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width
10
S, Duty Cycle
1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Mechanical Data
A
E
J
L
TOP VIEW
M
B
C
H
G
D
K
D
G
S
Source
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Gate
Drain
T
C
U
D
O
R
P
W
E
N
Case: SOT-23
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Finish
Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking: See Last Page
Ordering & Date Code Information: See Last Page
Weight: 0.008 grams (approximate)
Low On-Resistance: R
DS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant
(Note
2)
ESD Protected Up To 2kV
"Green" Device (Note 4)
Features
Maximum Ratings
@ T
A
= 25C unless otherwise specified
ESD protected up to 2kV
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
0
8
All Dimensions in mm
DS30652 Rev. 2 - 2
2 of 4
DMN601K
www.diodes.com
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
60
V
V
GS
= 0V, I
D
= 10
A
Zero Gate Voltage Drain Current
I
DSS
1.0
A
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
10
A
V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
1.0
1.6
2.5
V
V
DS
= 10V, I
D
= 1mA
Static Drain-Source On-Resistance
R
DS (ON)
2.0
3.0
V
GS
= 10V, I
D
= 0.5A
V
GS
= 5V, I
D
= 0.05A
Forward Transfer Admittance
|Y
fs
|
80
ms
V
DS
=10V, I
D
= 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
50
pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
25
pF
Reverse Transfer Capacitance
C
rss
5.0
pF
T
C
U
D
O
R
P
W
E
N
0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
V
,
DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Characteristics
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
1.2
1.4
3V
4V
6V
8V
10V
V
= 10V
GS
8V
6V
5V
4V
3V
5V
V
, GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
0.01
0.10
1.00
1
1.5
2
2.5
3
3.5
4
4.5
5
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
T = 125
C
A
T = 25
C
A
T = -25
C
A
T = 75
C
A
V
= 10V
DS
Pulsed
T , CHANNEL TEMPERATURE (C)
ch
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
0
0.5
1
1.5
2
-50
-25
0
25
50
75
100
125
150
V
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
G
S
(
t
h
)
,
V
= 10V
DS
I = 1mA
D
Pulsed
0.1
I
,
DRAIN CURRENT
(A)
D
Fig. 4 Static Drain-Source On-Resistance
Vs. Drain Current
1
10
0.001
0.01
0.1
1
T = 150
C
A
T = 125
C
A
T = 85
C
A
T = -55
C
A
T = 25
C
A
T = 0
C
A
T = -25
C
A
V
= 10V
GS
Pulsed
Notes:
5. Short duration test pulse used to minimize self-heating effect.
DS30652 Rev. 2 - 2
3 of 4
DMN601K
www.diodes.com
1
I , DRAIN CURRENT (A)
D
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
10
0.1
1
0.001
0.01
0.1
V
= 5V
GS
Pulsed
T = 150
C
A
T = 125
C
A
T = 85
C
A
T = -55
C
A
T = 25
C
A
T = -25
C
A
T = 0
C
A
0
V
GATE SOURCE VOLTAGE (V)
GS,
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
1
2
3
4
5
6
7
0
2
4
6
8
10
12
14
16
18
20
I = 300mA
D
I = 150mA
D
T = 25
C
A
Pulsed
T
C
U
D
O
R
P
W
E
N
I
,
R
E
V
E
R
S
E
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
R
0.001
0.01
0.1
1
0
0.5
1
1.5
V
, SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Reverse Drain Current
vs. Source-Drain Voltage
V
= 0V
GS
Pulsed
T
= -55
C
A
T = 150
C
A
T = 125
C
A
T = 85
C
A
T = 25
C
A
T = 0
C
A
T = -25
C
A
0
Tch, CHANNEL TEMPERATURE (
C)
Fig. 7
Static Drain-Source On-State Resistance
vs. Channel Temperature
0.5
1
1.5
2
2.5
-75 -50
-25
0
25
50
75
100 125 150
V
= 10V
GS
Pulsed
I = 300mA
D
I = 150mA
D
1
I , DRAIN CURRENT (A)
D
Fig.10 Forward Transfer Admittance
vs. Drain Current
|
Y
|
,
F
O
R
W
A
R
D
T
R
A
N
S
F
E
R
A
D
M
I
T
T
A
N
C
E
(
S
)
f
s
0.001
0.01
0.1
0.001
0.01
0.1
1
V
= 10V
GS
Pulsed
T = 25
C
A
T = -55
C
A
T = 150
C
A
T = 85
C
A
1
0.001
0.01
0.1
1
0
0.5
I
,
R
E
V
E
R
S
E
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
R
V
, SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 9 Reverse Drain Current
vs. Source-Drain Voltage
V
= 0V
GS
V
= 10V
GS
T = 25C
A
Pulsed
DS30652 Rev. 2 - 2
4 of 4
DMN601K
www.diodes.com
T
C
U
D
O
R
P
W
E
N
K7K
Y
M
K7K = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
Date Code Key
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Year
2005
2006
2007
2008
2009
Code
S
T
U
V
W
Notes: 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Device
Packaging
Shipping
DMN601K-7
SOT-23
3000/Tape & Reel
Ordering Information
Marking Information
(Note 6)
PDF 
ZIP