DS30057 Rev. 3 - 2
1 of 2
MMBT5401
www.diodes.com
MMBT5401
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary NPN Type Available
(MMBT5551)
Ideal for Medium Power Amplification and
Switching
Characteristic
Symbol
MMBT5401
Unit
Collector-Base Voltage
V
CBO
-160
V
Collector-Emitter Voltage
V
CEO
-150
V
Emitter-Base Voltage
V
EBO
-5.0
V
Collector Current - Continuous (Note 1)
I
C
-200
mA
Power Dissipation (Note 1)
P
d
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
qJA
417
C/W
Operating and Storage and Temperature Range
T
j
, T
STG
-55 to +150
C
A
E
J
L
TOP VIEW
M
B C
C
B
E
H
G
D
K
Mechanical Data
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 2): K4M
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0
8
All Dimensions in mm
E
B
C
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V
(BR)CBO
-160
V
I
C
= -100
mA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-150
V
I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5.0
V
I
E
= -10
mA, I
C
= 0
Collector Cutoff Current
I
CBO
-50
nA
mA
V
CB
= -120V, I
E
= 0
V
CB
= -120V, I
E
= 0, T
A
= 100
C
Emitter Cutoff Current
I
EBO
-50
nA
V
EB
= -3.0V, I
C
= 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
50
60
50
240
I
C
= -1.0mA, V
CE
= -5.0V
I
C
= -10mA, V
CE
= -5.0V
I
C
= -50mA, V
CE
= -5.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.2
-0.5
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
Base- Emitter Saturation Voltage
V
BE(SAT)
-1.0
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
6.0
pF
V
CB
= -10V, f = 1.0MHz, I
E
= 0
Small Signal Current Gain
h
fe
40
200
V
CE
= -10V, I
C
= -1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
100
300
MHz
V
CE
= -10V, I
C
= -10mA,
f = 100MHz
Noise Figure
NF
8.0
dB
V
CE
= -5.0V, I
C
= -200
mA,
R
S
= 10
W, f = 1.0kHz
Features
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
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