Lead-free Green
DS30636 Rev. 3 - 2
1 of 3
MMDT3904VC
www.diodes.com
Diodes Incorporated
MMDT3904VC
DUAL NPN SMALL SIGNAL SURFACE MOUNT
TRANSISTOR
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 4)
"Green Device" (Note 5)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6.0
V
Collector Current - Continuous
I
C
200
mA
Power Dissipation (Note 2)
P
d
200
mW
Thermal Resistance, Junction to Ambient
R
JA
625
C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
C
Features
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
Mechanical Data
Case: SOT-563
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking (See Page 2): APK
Ordering Information: See Below
Date Code Information: See Page 2
Weight: 0.003 grams (approx.)
Device
Packaging
Shipping
MMDT3904VC-7
SOT-563
3000/Tape & Reel
Ordering Information
(Note 3)
C
1
B
2
E
2
C
2
E
1
B
1
SEE NOTE 1
A
M
L
B C
H
K
G
D
C
1
B
2
E
2
C
2
E
1
B
1
SOT-563
Dim
Min
Max
Typ
A
0.15
0.30
0.25
B
1.10
1.25
1.20
C
1.55
1.70
1.60
D
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
K
0.56
0.60
0.60
L
0.10
0.30
0.20
M
0.10
0.18
All Dimensions in mm
Notes:
1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180
rotated, or mixed (both ways).
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
4. No purposefully added lead.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
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SPICE MODEL: MMDT3904VC
DS30636 Rev. 3 - 2
2 of 3
MMDT3904VC
www.diodes.com
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
V
(BR)CBO
60
V
I
C
= 10
A, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
40
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
5.0
V
I
E
= 10
A, I
C
= 0
Collector Cutoff Current
I
CEX
50
nA
V
CE
= 30V, V
EB(OFF)
= 3.0V
Base Cutoff Current
I
BL
50
nA
V
CE
= 30V, V
EB(OFF)
= 3.0V
ON CHARACTERISTICS (Note 6)
DC Current Gain
h
FE
40
70
100
60
30
300
I
C
= 100A, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.20
0.30
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
0.65
0.85
0.95
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
4.0
pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
8.0
pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
1.0
10
k
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
h
re
0.5
8.0
x 10
-4
Small Signal Current Gain
h
fe
100
400
Output Admittance
h
oe
1.0
40
S
Current Gain-Bandwidth Product
f
T
300
MHz
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
Noise Figure
NF
5.0
dB
V
CE
= 5.0V, I
C
= 100
A,
R
S
= 1.0k
,
f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
35
ns
V
CC
= 3.0V, I
C
= 10mA,
V
BE(off)
= - 0.5V, I
B1
= 1.0mA
Rise Time
t
r
35
ns
Storage Time
t
s
200
ns
V
CC
= 3.0V, I
C
= 10mA,
I
B1
= I
B2
= 1.0mA
Fall Time
t
f
50
ns
Notes:
6. Short duration test pulse used to minimize self-heating.
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Date Code Key
Marking Information
APK = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: R = 2004
M = Month ex: 9 = September
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APK YM
Year
2005
2006
2007
2008
2009
Code
S
T
U
V
W
DS30636 Rev. 3 - 2
3 of 3
MMDT3904VC
www.diodes.com
0.1
1
10
0.1
1
10
100
1000
V
,
B
A
S
E
-
E
M
I
T
T
E
R
(
V
)
B
E
(
S
A
T
)
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
I
C
I
B
= 10
0.01
0.1
1
0.1
1
10
100
1000
V
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
(
V
)
C
E
(
S
A
T
)
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Typical Collector-Emitter
Saturation Voltage vs. Collector Current
I
C
I
B
= 10
1
10
1000
100
0.1
1
10
1000
100
h
,
D
C
C
U
R
R
E
N
T
G
A
I
N
F
E
I , COLLECTOR CURRENT (mA)
C
Fig. 3, Typical DC Current Gain vs
Collector Current
T = -25C
A
T = +25C
A
T = 125C
A
V = 1.0V
CE
0
5
15
10
0.1
1
10
100
C
,
I
N
P
U
T
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
I
B
O
C
,
O
U
T
P
U
T
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
O
B
O
V
, COLLECTOR-BASE VOLTAGE (V)
CB
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
Cibo
Cobo
f = 1MHz
-50
0
50
100
150
250
200
150
50
100
0
T , AMBIENT TEMPERATURE (
C)
A
Fig. 1, Derating Curve - Total
P
,
P
O
W
E
R
D
I
S
S
I
P
A
T
I
O
N
(
m
W
)
d
T
C
U
D
O
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P
W
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