D
S22006 Rev. H-2 1 of 2 BAV20 / BAV21
BAV20 / BAV21
FAST SWITCHING DIODE
Features
Case: DO-35, Glass
Leads: Solderable per MlL-STD-202,
Method 208
Marking: Cathode Band and Type Number
Weight: 0.13 grams (approx.)
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 8.0mm.
Mechanical Data
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Glass Package for High Reliability
Planar Die Construction
Low Reverse Leakage Current
Also available in Surface Mount Package
(BAV20W and BAV21W)
A
A
B
C
D
DO-35
Dim
Min
Max
A
25.40
--
B
--
4.00
C
--
0.60
D
--
2.00
All Dimensions in mm
Characteristic
Symbol
BAV20
BAV21
Unit
Repetitive Peak Reverse Voltage
V
RRM
200
250
V
Working Peak Reverse Voltage
DC Blocking Voltage
V
RWM
V
R
150
200
V
RMS Reverse Voltage
V
R(RMS)
106
141
V
Forward Continuous Current (Note 1)
I
FM
250
mA
Average Rectified Output Current (Note 1)
I
0
200
mA
Forward Surge Current
@ t = 1.0s
I
FSM
1.0
A
Repetitive Peak Forward Current (Note 1)
I
FRM
625
mA
Power Dissipation (Note 1)
P
d
500
mW
Thermal Resistance, Junction to Ambient Air (Note 1)
R
qJA
300
K/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +175
C
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Maximum Forward Voltage
V
FM
--
--
1.0
V
I
F
= 100mA
Maximum Peak Reverse Current
BAV20
BAV20
BAV21
BAV21
I
R
--
--
100
15
100
15
nA
mA
nA
mA
V
R
= 150V
V
R
= 150V, T
j
= 100
C
V
R
= 200V
V
R
= 200V, T
j
= 100
C
Dynamic Forward Resistance
r
f
--
5.0
--
W
I
F
= 10mA
Junction Capacitance
C
j
--
1.5
--
pF
V
R
= 0, f = 1.0MHz
Reverse Recovery Time
t
rr
--
--
50
ns
I
F
= I
R
= 30mA to I
R
= 3.0mA;
R
L
= 100
W
D
S22006 Rev. H-2 2 of 2 BAV20 / BAV21
1000
100
10
1.0
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
I
,
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(mA)
F
V INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
F,
T = 100 C
j
T = 25 C
j
0
30
60
90
120
150
0
0.1
0.2
0.3
T , AMBIENT TEMPERATURE ( C)
Fig. 2 Forward Current Derating
A
I
,
I
,
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(A)
FO
DC Current I
F
Current (rectif.) I
O
(See Note 1)
0
100
200
T , AMBIENT TEMPERATURE (C)
Fig. 3. Power Dissipation Derating
A
P
,
POWER
DISSIP
A
TION
(mW)
d
0
100
200
300
400
500
(See Note 1)
C
,
CAP
ACIT
ANCE
(pF)
j
T = 25 C
j
V REVERSE VOLTAGE (V)
Fig. 6 Typical Junction Capacitance vs Reverse Voltage
R,
0.1
100
10
1.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
r
,
DYNAMIC
RESIST
ANCE,
(Ohms)
f
1
10
100
10
100
1
I , FORWARD CURRENT (mA)
Fig. 5 Dynamic Forward Resistance vs Forward Current
F
1000
100
10
1
0
200
100
0
Reverse Voltage
BAV20 V = 150V
BAV21 V = 200V
R
R
T JUNCTION TEMPERATURE ( C)
Fig. 4 Relative Reverse Current vs Junction Temperature
J,
REVERSE
CURRENT
RA
TIO
[I
/I
(25
C)]
R(T)
R
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