DS30372 Rev. 2 - 2
1 of 3
SDM03MT40
www.diodes.com
Diodes Incorporated
SDM03MT40
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
Low Forward Voltage Drop
Guard Ring Die Construction for
Transient Protection
Ideal for low logic level applications
Low Capacitance
Mechanical Data
Case: SOT-26, Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture Sensitivity: Level 1 per J-STD-020A
Polarity: See Diagram
Leads: Solderable per MIL-STD-202,
Method 208
Marking: Marking Code & Date Code (See Page 3)
Marking Code: KSR
Weight: 0.016 grams (approx.)
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40
V
RMS Reverse Voltage
V
R(RMS)
28
V
Forward Continuous Current (Note 2)
I
FM
30
mA
Non-Repetitive Peak Forward Surge Current @8.3ms
Single half sine-wave superimposed on rated load
(JEDEDC method)
I
FSM
200
mA
Power Dissipation (Note 2)
P
d
225
mW
Thermal Resistance, Junction to Ambient Air
R
qJA
444
C/W
Operating and Storage Temperature Range
T
j,
T
STG
-40 to +125
C
Electrical Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 1)
V
(BR)R
40
V
I
R
= 10uA
Forward Voltage Drop (Note 1)
V
F
370
mV
I
F
= 1mA
Leakage Current (Note 1)
I
R
1
mA
V
R
= 10V
Total Capacitance
C
T
2
pF
V
R
= 1V f = 1.0 MHz
@ T
A
= 25
C unless otherwise specified
T
C
U
D
O
R
P
W
E
N
A
M
J
L
D
F
B C
H
K
TOP VIEW
SOT-26
Dim
Min
Max
Typ
A
0.35
0.50
0.38
B
1.50
1.70
1.60
C
2.70
3.00
2.80
D
0.95
F
0.55
H
2.90
3.10
3.00
J
0.013 0.10
0.05
K
1.00
1.30
1.10
L
0.35
0.55
0.40
M
0.10
0.20
0.15
a
0
8
All Dimensions in mm
Notes: 1. Short duration test pulse to minimize self-heating effect.
2. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
SPICE MODELS: SDM03MT40
DS30372 Rev. 2 - 2
2 of 3
SDM03MT40
www.diodes.com
0
5
10
15
20
25
30
35
I
,
INST
ANT
A
NEOUS
R
EVERSE
C
URRENT
(A)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Fig. 3 Typical Reverse Characteristics
T = +125C
A
T = 75C
A
T = 25C
A
T = -25C
A
100n
10n
1n
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
,
INST
ANT
A
NEOUS
FOR
W
A
RD
CURRENT
(
A
)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 2 Typical Forward Characteristics
T = +125C
A
T = +75C
A
T = +25C
A
100m
1m
10m
1
0
75
0
25
50
75
100
125
P
,
POWER
D
ISSIP
A
TION
(mW)
D
T , AMBIENT TEMPERATURE (
C)
A
Fig. 1 Derating Curve
150
300
225
0.1
1
10
100
0
5
10
15
20
25
C
,
T
O
T
A
L
C
AP
ACIT
ANCE
(pF)
T
V , REVERSE VOLTAGE (V)
R
Fig. 4 Total Capacitance vs. DC Voltage
f = 1MHz
0.1
0.2
0.5
1
5
2
10
0
4
8
12
16
20
24
28
t
,
REVERSE
RECOVER
Y
TIME
(
ns)
rr
I , FORWARD CURRENT (mA)
F
Fig. 5 Typical Reverse Recovery Time Characteristics
T
C
U
D
O
R
P
W
E
N
DS30372 Rev. 2 - 2
3 of 3
SDM03MT40
www.diodes.com
T
C
U
D
O
R
P
W
E
N
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Date Code Key
KSR = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
KSR
YM
Marking Information
Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Device
Packaging
Shipping
SDM03MT40-7
SOT-26
3000/Tape & Reel
Ordering Information
(Note 3)
Year
2002
2003
2004
2005
2006
2007
2008
2009
Code
N
P
R
S
T
U
V
W
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