1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
2
) Tested with pulses t
p
= 300 s, duty cycle
2% Gemessen mit Impulsen t
p
= 300 s, Schaltverhltnis
2%
1
2.
5
ma
x
1.
3
0
.
1
1.1
2.9
0.1
0.4
1
2
3
Type
Code
1.9
BAV70
Small Signal Si-Diodes
Surface mount Small Signal Double-Diodes
Kleinsignal-Doppel-Dioden fr die Oberflchenmontage
Version 2004-01-27
Power dissipation Verlustleistung
310 mW
Repetitive peak reverse voltage
70 V
Periodische Spitzensperrspannung
Plastic case
SOT-23
Kunststoffgehuse
(TO-236)
Weight approx. Gewicht ca.
0.01 g
Dimensions / Mae in mm
1 = A1 2 = A2 3 = K1/K2
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25C)
Grenzwerte (T
A
= 25C)
per diode / pro Diode
BAV70
Power dissipation Verlustleistung
P
tot
310 mW
1
)
Max. average forward current (dc)
Dauergrenzstrom
I
FAV
200 mA
1
)
Repetitive peak forward current
Periodischer Spitzenstrom
I
FRM
300 mA
1
)
Peak forward surge current
Stostrom-Grenzwert
t
p
1 s
t
p
1 ms
t
p
1 s
I
FSM
I
FSM
I
FSM
0.5 A
1 A
2 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
70 V
Junction temperature Sperrschichttemperatur
T
j
150C
Storage temperature Lagerungstemperatur
T
S
- 55...+ 150C
Characteristics (T
j
= 25C)
Kennwerte (T
j
= 25C)
Forward voltage - Durchlaspannung
2
)
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
V
F
V
F
V
F
V
F
< 715 mV
< 855 mV
< 1 V
< 1.25 V
Leakage current - Sperrstrom
2
)
V
R
= 70 V
T
j
= 25C
I
R
< 5 A
V
R
= 25 V
V
R
= 70 V
T
j
= 150C
I
R
I
R
< 60 A
< 100 A
1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
2
3
1
2
Small Signal Si-Diodes
BAV70
Characteristics (T
j
= 25C)
Kennwerte (T
j
= 25C)
Max. junction Capacitance Max. Sperrschichtkapazitt
V
R
= 0 V, f = 1 MHz
C
T
1.5 pF
Reverse recovery time - Sperrverzug
I
F
= 10 mA ber / through I
R
= 10 mA bis / to I
R
= 1 mA
t
rr
< 6 ns
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht umgebende Luft
R
thA
420 K/W
1
)
Outline Gehuse
Pinning Anschlubelegung
Marking Stempelung
Double diode, common cathode
Doppeldiode, gemeins. Katode
1 = A1 2 = A2 3 = K1 / K2
BAV70 = A4
or / oder = JJ
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