1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gltig, wenn die Anschludrhte in 2 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden
2
01.11.2003
BC 327 / BC 328
General Purpose Transistors
PNP
Si-Epitaxial PlanarTransistors
PNP
Power dissipation Verlustleistung
625 mW
Plastic case
TO-92
Kunststoffgehuse
(10D3)
Weight approx. Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Standard Pinning
1 = C 2 = B 3 = E
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (T
A
= 25
/
C)
Grenzwerte (T
A
= 25
/
C)
BC 327
BC 328
Collector-Emitter-voltage
B open
- V
CE0
45 V
25 V
Collector-Emitter-voltage
B shorted
- V
CES
50 V
30 V
Emitter-Base-voltage
C open
- V
EB0
5 V
Power dissipation Verlustleistung
P
tot
625 mW
1
)
Collector current Kollektorstrom (DC)
- I
C
800 mA
Peak Coll. current Kollektor-Spitzenstrom
- I
CM
1 A
Base current Basisstrom
- I
B
100 mA
Junction temp. Sperrschichttemperatur
T
j
150
/
C
Storage temperature Lagerungstemperatur
T
S
- 65...+ 150
/
C
Characteristics, T
j
= 25
/
C
Kennwerte, T
j
= 25
/
C
Min.
Typ.
Max.
DC current gain Kollektor-Basis-Stromverhltnis
- V
CE
= 1 V, - I
C
= 100 mA
Group -16
h
FE
100
160
250
Group -25
h
FE
160
250
400
Group -40
h
FE
250
400
630
- V
CE
= 1 V, - I
C
= 300 mA
Group -16
h
FE
60
130
Group -25
h
FE
100
200
Group -40
h
FE
170
320
1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gltig, wenn die Anschludrhte in 2 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden
3
01.11.2003
General Purpose Transistors
BC 327 / BC 328
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
Collector-Emitter cutoff current Kollektorreststrom
- V
CE
= 45 V
BC 327
- I
CES
2 nA
100 nA
- V
CE
= 25 V
BC 328
- I
CES
2 nA
100 nA
- V
CE
= 45 V, T
j
= 125
/
C
BC 327
- I
CES
10
:
A
- V
CE
= 25 V, T
j
= 125
/
C
BC 328
- I
CES
10
:
A
Collector-Emitter breakdown voltage
Collector-Emitter Durchbruchspannung
- I
C
= 10 mA
BC 327
- V
(BR)CES
20 V
BC 328
- V
(BR)CES
45 V
- I
C
= 0.1 mA
BC 327
- V
(BR)CES
30 V
BC 328
- V
(BR)CES
50 V
Emitter-Base breakdown voltage
Emitter-Basis-Durchbruchspannung
- I
E
= 0.1 mA
- V
(BR)EB0
5 V
Collector saturation volt. Kollektor-Sttigungsspannung
- I
C
= 500 mA, - I
B
= 50 mA
- V
CEsat
0.7 V
Base-Emitter voltage Basis-Emitter-Spannung
- V
CE
= 1 V, - I
C
= 300 mA
- V
BE
1.2 V
Gain-Bandwidth Product Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 50 MHz
f
T
100 MHz
Collector-Base Capacitance Kollektor-Basis-Kapazitt
- V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
C
CB0
12 pF
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht umgebende Luft
R
thA
200 K/W
1
)
Recommended complementary NPN transistors
Empfohlene komplementre NPN-Transistoren
BC 337 / BC 338
Available current gain groups per type
Lieferbare Stromverstrkungsgruppen pro Typ
BC 327-16
BC 328-16
BC 327-25
BC 328-25
BC327-40
BC328-40
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