1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gltig, wenn die Anschludrhte in 2 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden
4
01.11.2003
BC 337 / BC 338
General Purpose Transistors
NPN
Si-Epitaxial PlanarTransistors
NPN
Power dissipation Verlustleistung
625 mW
Plastic case
TO-92
Kunststoffgehuse
(10D3)
Weight approx. Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Standard Pinning
1 = C 2 = B 3 = E
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (T
A
= 25
/
C)
Grenzwerte (T
A
= 25
/
C)
BC 337
BC 338
Collector-Emitter-voltage
B open
V
CE0
45 V
25 V
Collector-Base-voltage
E open
V
CB0
50 V
30 V
Emitter-Base-voltage
C open
V
EB0
5 V
Power dissipation Verlustleistung
P
tot
625 mW
1
)
Collector current Kollektorstrom (DC)
I
C
800 mA
Junction temp. Sperrschichttemperatur
T
j
150
/
C
Storage temperature Lagerungstemperatur
T
S
- 55...+ 150
/
C
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
DC current gain Kollektor-Basis-Stromverhltnis
V
CE
= 1 V, I
C
= 100 mA
Group -16
h
FE
100
160
250
Group -25
h
FE
160
250
400
Group -40
h
FE
250
400
630
Collector-Emitter cutoff current Kollektorreststrom
V
CE
= 40 V
BC 337
I
CES
200 nA
V
CE
= 20 V
BC 338
I
CES
200 nA
V
CE
= 40 V, T
j
= 125
/
C
BC 337
I
CES
10
:
A
V
CE
= 20 V, T
j
= 125
/
C
BC 338
I
CES
10
:
A
1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gltig, wenn die Anschludrhte in 2 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden
5
01.11.2003
General Purpose Transistors
BC 337 / BC 338
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
Collector-Emitter breakdown voltage
Collector-Emitter Durchbruchspannung
I
C
= 10 mA
BC 337
V
(BR)CES
40 V
BC 338
V
(BR)CES
20 V
I
C
= 0.1 mA
BC 337
V
(BR)CES
50 V
BC 338
V
(BR)CES
30 V
Emitter-Base breakdown voltage
Emitter-Basis-Durchbruchspannung
I
E
= 10
:
A
V
(BR)EB0
5 V
Collector saturation volt. Kollektor-Sttigungsspannung
I
C
= 500 mA, I
B
= 50 mA
V
CEsat
0.7 V
Base-Emitter voltage Basis-Emitter-Spannung
V
CE
= 1 V, I
C
= 300 mA
V
BE
1.2 V
Gain-Bandwidth Product Transitfrequenz
V
CE
= 5 V, I
C
= 10 mA, f = 50 MHz
f
T
100 MHz
Collector-Base Cap. Kollektor-Basis-Kap.
V
CB
= 10 V, f = 1 MHz
C
CB0
12 pF
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht umgebende Luft
R
thA
200 K/W
1
)
Recommended complementary PNP transistors
Empfohlene komplementre PNP-Transistoren
BC 327 / BC 328
Available current gain groups per type
Lieferbare Stromverstrkungsgruppen pro Typ
BC 337-16
BC 338-16
BC 337-25
BC 338-25
BC337-40
BC338-40
PDF 
ZIP