1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gltig, wenn die Anschludrhte in 2 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden
6
01.11.2003
BC 546 ... BC 549
General Purpose Transistors
NPN
Si-Epitaxial PlanarTransistors
NPN
Power dissipation Verlustleistung
500 mW
Plastic case
TO-92
Kunststoffgehuse
(10D3)
Weight approx. Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Standard Pinning
1 = C 2 = B 3 = E
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (T
A
= 25
/
C)
Grenzwerte (T
A
= 25
/
C)
BC 546
BC 547
BC 548/549
Collector-Emitter-voltage
B open
V
CE0
65 V
45 V
30 V
Collector-Emitter-voltage
B shorted
V
CES
85 V
50 V
30 V
Collector-Base-voltage
E open
V
CB0
80 V
50 V
30 V
Emitter-Base-voltage
C open
V
EB0
6 V
6 V
5 V
Power dissipation Verlustleistung
P
tot
500 mW
1
)
Collector current Kollektorstrom (DC)
I
C
100 mA
Peak Coll. current Kollektor-Spitzenstrom
I
CM
200 mA
Peak Base current Basis-Spitzenstrom
I
BM
200 mA
Peak Emitter current Emitter-Spitzenstrom
- I
EM
200 mA
Junction temp. Sperrschichttemperatur
T
j
150
/
C
Storage temperature Lagerungstemperatur
T
S
- 65...+ 150
/
C
Characteristics, T
j
= 25
/
C
Kennwerte, T
j
= 25
/
C
Group A
Group B
Group C
DC current gain Kollektor-Basis-Stromverhltnis
V
CE
= 5 V, I
C
= 10
:
A
h
FE
typ. 90
typ. 150
typ. 270
V
CE
= 5 V, I
C
= 2 mA
h
FE
110...220
200...450
420...800
V
CE
= 5 V, I
C
= 100 mA
h
FE
typ. 120
typ. 200
typ.400
h-Parameters at V
CE
= 5V, I
C
= 2 mA, f = 1 kHz
Small signal current gain Stromverst.
h
fe
typ. 220
typ. 330
typ. 600
Input impedance Eingangsimpedanz
h
ie
1.6...4.5 k
S
3.2...8.5 k
S
6...15 k
S
Output admittance Ausgangsleitwert
h
oe
18 < 30
:
S
30 < 60
:
S
60 < 110
:
S
Reverse voltage transfer ratio
Spannungsrckwirkung
h
re
typ.1.5 *10
-4
typ. 2 *10
-4
typ. 3 *10
-4
1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gltig, wenn die Anschludrhte in 2 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden
7
01.11.2003
General Purpose Transistors
BC 546 ... BC 549
Characteristics, T
j
= 25
/
C
Kennwerte, T
j
= 25
/
C
Min.
Typ.
Max.
Collector saturation voltage Kollektor-Sttigungsspannung
I
C
= 10 mA, I
B
= 0.5 mA
V
CEsat
80 mV
200 mV
I
C
= 100 mA, I
B
= 5 mA
V
CEsat
200 mV
600 mV
Base saturation voltage Basis-Sttigungsspannung
I
C
= 10 mA, I
B
= 0.5 mA
V
BEsat
700 mV
I
C
= 100 mA, I
B
= 5 mA
V
BEsat
900 mV
Base-Emitter voltage Basis-Emitter-Spannung
V
CE
= 5 V, I
C
= 2 mA
V
BE
580 mV
660 mV
700 mV
V
CE
= 5 V, I
C
= 10 mA
V
BE
720 mV
Collector-Emitter cutoff current Kollektorreststrom
V
CE
= 80 V
BC 546
I
CES
0.2 nA
15 nA
V
CE
= 50 V
BC 547
I
CES
0.2 nA
15 nA
V
CE
= 30 V
BC 548
I
CES
0.2 nA
15 nA
V
CE
= 30 V
BC 549
I
CES
0.2 nA
15 nA
Collector-Emitter cutoff current Kollektorreststrom
V
CE
= 80 V, T
j
= 125
/
C
BC 546
I
CES
4
:
A
V
CE
= 50 V, T
j
= 125
/
C
BC 547
I
CES
4
:
A
V
CE
= 30 V, T
j
= 125
/
C
BC 548
I
CES
4
:
A
V
CE
= 30 V, T
j
= 125
/
C
BC 549
I
CES
4
:
A
Gain-Bandwidth Product Transitfrequenz
V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
f
T
300 MHz
Collector-Base Capacitance Kollektor-Basis-Kapazitt
V
CB
= 10 V, f = 1 MHz
C
CB0
3.5 pF
6 pF
Emitter-Base Capacitance Emitter-Basis-Kapazitt
V
EB
= 0.5 V, f = 1 MHz
C
EB0
9 pF
Noise figure Rauschma
V
CE
= 5 V, I
C
= 200
:
A
BC 547
F
2 dB
10 dB
R
G
= 2 k
S
f = 1 kHz,
BC 548
F
1.2 dB
4 dB
)
f = 200 Hz
BC 549
F
1.2 dB
4 dB
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht umgebende Luft
R
thA
250 K/W
1
)
Recommended complementary PNP transistors
Empfohlene komplementre PNP-Transistoren
BC 556 ... BC 559
Available current gain groups per type
Lieferbare Stromverstrkungsgruppen pro Typ
BC 546A
BC 547A
BC 548A
BC 546B
BC 547B
BC 548B
BC 549B
BC 547C
BC 548C
BC 549C
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