1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
4
01.11.2003
1
2
3
Type
Code
2.1
0
.
1
2
0.1
1
0.1
1.
2
5
0
.
1
0.3
1.3
BC 807W / BC 808W
General Purpose Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren fr die Oberflchenmontage
PNP
Power dissipation Verlustleistung
225 mW
Plastic case
SOT-323
Kunststoffgehuse
Weight approx. Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Dimensions / Mae in mm
1 = B
2 = E
3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25
/
C)
Grenzwerte (T
A
= 25
/
C)
BC 807W
BC 808W
Collector-Emitter-voltage
B open
- V
CE0
45 V
25 V
Collector-Emitter-voltage
B shorted
- V
CES
50 V
30 V
Collector-Base-voltage
E open
- V
CB0
50 V
30 V
Emitter-Base-voltage
C open
- V
EB0
5 V
Power dissipation Verlustleistung
P
tot
225 mW
1
)
Collector current Kollektorstrom (DC)
- I
C
500 mA
Peak Coll. current Kollektor-Spitzenstrom
- I
CM
1000 mA
Peak Base current Basis-Spitzenstrom
- I
BM
200 mA
Peak Emitter current Emitter-Spitzenstrom
I
EM
1000 mA
Junction temperature Sperrschichttemperatur
T
j
150
/
C
Storage temperature Lagerungstemperatur
T
S
- 65...+ 150
/
C
Characteristics, T
j
= 25
/
C
Kennwerte, T
j
= 25
/
C
Min.
Typ.
Max.
DC current gain Kollektor-Basis-Stromverhltnis
- V
CE
= 1 V, - I
C
= 100 mA
BC807W
BC808W
h
FE
100
600
- V
CE
= 1 V, - I
C
= 500 mA
h
FE
40
- V
CE
= 1 V, - I
C
= 100 mA
Group -16W h
FE
100
160
250
Group -25W h
FE
160
250
400
Group -40W h
FE
250
400
600
1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
5
01.11.2003
General Purpose Transistors
BC 807W / BC 808W
Characteristics, T
j
= 25
/
C
Kennwerte, T
j
= 25
/
C
Min.
Typ.
Max.
Collector saturation voltage Kollektor-Sttigungsspg.
- I
C
= 500 mA, - I
B
= 50 mA
- V
CEsat
0.7 V
Base saturation voltage Basis-Sttigungsspannung
- I
C
= 500 mA, - I
B
= 50 mA
- V
BEsat
1.3 V
Base-Emitter voltage Basis-Emitter-Spannung
- V
CE
= 1 V, - I
C
= 500 mA
- V
BE
1.2 V
Collector-Base cutoff current Kollektorreststrom
I
E
= 0, - V
CB
= 20 V
- I
CB0
100 nA
I
E
= 0, - V
CB
= 20 V, T
j
= 150
/
C
- I
CB0
5
:
A
Emitter-Base cutoff current Emitterreststrom
I
C
= 0, - V
EB
= 4 V
- I
EB0
100 nA
Gain-Bandwidth Product Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 50 MHz
f
T
80 MHz
100 MHz
Collector-Base Capacitance Kollektor-Basis-Kapazitt
- V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
C
CB0
10 pF
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht umgebende Luft
R
thA
620 K/W
1
)
Recommended complementary NPN transistors
Empfohlene komplementre NPN-Transistoren
BC 817W / BC 818W
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom
verstrkungsgruppen pro Typ
BC 807-16W = 5A
BC 807-25W = 5B
BC 807-40W = 5C
BC 807W = 5D
BC 808-16W = 5E
BC 808-25W = 5F
BC 808-40W = 5G
BC 808W = 5H
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