1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
2
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhltnis
#
2%
26
01.11.2003
4
3
2
1
3
0.1
6.5
0.2
0.7
3.25
2.3
7
0
.
3
1.65
3.
5
0
.
2
BCP 54, BCP 55, BCP 56
General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren fr die Oberflchenmontage
NPN
Power dissipation Verlustleistung
1.3 W
Plastic case
SOT-223
Kunststoffgehuse
Weight approx. Gewicht ca.
0.04 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Dimensions / Mae in mm
1 = B
2, 4 = C
3 = E
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25
/
C)
Grenzwerte (T
A
= 25
/
C)
BCP 54
BCP 55
BCP 56
Collector-Emitter-voltage
B open
V
CE0
45 V
60 V
80 V
Collector-Base-voltage
E open
V
CB0
45 V
60 V
100 V
Emitter-Base-voltage
C open
V
EB0
5 V
Power dissipation Verlustleistung
P
tot
1.3 W
1
)
Collector current Kollektorstrom (DC)
I
C
1 A
Peak Collector current Koll.-Spitzenstrom
I
CM
1.5 A
Peak Base current Basis-Spitzenstrom
I
BM
200 mA
Junction temp. Sperrschichttemperatur
T
j
150
/
C
Storage temperature Lagerungstemperatur
T
S
- 65...+ 150
/
C
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
Collector-Base cutoff current Kollektorreststrom
I
E
= 0, V
CB
= 30 V
I
CB0
100 nA
I
E
= 0, V
CB
= 30 V, T
j
= 125
/
C
I
CB0
10
:
A
Emitter-Base cutoff current Emitterreststrom
I
C
= 0, V
EB
= 5 V
I
EB0
100 nA
Collector saturation volt. Kollektor-Sttigungsspg.
2
)
I
C
= 500 mA, I
B
= 50 mA
V
CEsat
500 mV
1
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhltnis
#
2%
2
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
27
01.11.2003
General Purpose Transistors
BCP 54, BCP 55, BCP 56
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
DC current gain Kollektor-Basis-Stromverhltnis
1
)
V
CE
= 2 V, I
C
= 150 mA
BCP 5x-6
h
FE
40
100
BCP 5x-10
h
FE
63
160
BCP 5x-16
h
FE
100
250
V
CE
= 2 V, I
C
= 5 mA
BCP 54...
BCP56
h
FE
63
V
CE
= 2 V, I
C
= 500 mA
h
FE
40
Base-Emitter voltage Basis-Emitter-Spannung
1
)
V
CE
= 2 V, I
C
= 500 mA
V
BEon
1 V
Gain-Bandwidth Product Transitfrequenz
V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
f
T
130 MHz
DC current gain ratio of the complement. pairs
Verhltnis der Stromverst. complement. Paare
h
FE1
'
h
FE2
1.6
Thermal resistance Wrmewiderstand
junction to ambient air Sperrschicht zu umgebender Luft
R
thA
95 K/W
2
)
junction to soldering point Sperrschicht zu Ltpad
R
thS
14 K/W
Recommended complementary PNP transistors
Empfohlene komplementre PNP-Transistoren
BCP 51, BCP 52, BCP 53
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