1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
2
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhltnis
#
2%
34
01.11.2003
2.
5
ma
x
1.
3
0
.
1
1.1
2.9
0.1
0.4
1
2
3
Type
Code
1.9
BCW 29, BCW 30
General Purpose Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren fr die Oberflchenmontage
PNP
Power dissipation Verlustleistung
250 mW
Plastic case
SOT-23
Kunststoffgehuse
(TO-236)
Weight approx. Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Dimensions / Mae in mm
1 = B
2 = E
3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25
/
C)
Grenzwerte (T
A
= 25
/
C)
BCW 29, BCW 30
Collector-Emitter-voltage
B open
- V
CE0
32 V
Collector-Base-voltage
E open
- V
CB0
32 V
Emitter-Base-voltage
C open
- V
EB0
5 V
Power dissipation Verlustleistung
P
tot
250 mW
1
)
Collector current Kollektorstrom (DC)
- I
C
100 mA
Peak Collector current Kollektor-Spitzenstrom
- I
CM
200 mA
Peak Base current Basis-Spitzenstrom
- I
BM
200 mA
Junction temperature Sperrschichttemperatur
T
j
150
/
C
Storage temperature Lagerungstemperatur
T
S
- 65...+ 150
/
C
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
Collector-Base cutoff current Kollektorreststrom
I
E
= 0, - V
CB
= 32 V
- I
CB0
100 nA
I
E
= 0, - V
CB
= 32 V, T
j
= 100
/
C
- I
CB0
10
:
A
Emitter-Base cutoff current Emitterreststrom
I
C
= 0, - V
EB
= 5 V
- I
EB0
100 nA
Collector saturation volt. Kollektor-Sttigungsspg.
2
)
- I
C
= 10 mA, - I
B
= 0.5 mA
- V
CEsat
80 mV
300 mV
- I
C
= 50 mA, - I
B
= 2.5 mA
- V
CEsat
150 mV
1
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhltnis
#
2%
2
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
35
01.11.2003
General Purpose Transistors
BCW 29, BCW 30
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
Base saturation voltage Basis-Sttigungsspannung
1
)
- I
C
= 10 mA, - I
B
= 0.5 mA
- V
BEsat
720 mV
- I
C
= 50 mA, - I
B
= 2.5 mA
- V
BEsat
810 mV
DC current gain Kollektor-Basis-Stromverhltnis
1
)
- V
CE
= 5 V, - I
C
= 10
:
A
BCW 29
h
FE
90
BCW 30
h
FE
150
- V
CE
= 5 V, - I
C
= 2 mA
BCW 29
h
FE
120
260
BCW 30
h
FE
215
500
Base-Emitter voltage Basis-Emitter-Spannung
1
)
- V
CE
= 5 V, - I
C
= 2 mA
- V
BEon
600 mV
750 mV
Gain-Bandwidth Product Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 100 MHz
f
T
100 MHz
Collector-Base Capacitance Kollektor-Basis-Kapazitt
- V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
C
CB0
4.5 pF
Noise figure Rauschzahl
- V
CE
= 5 V, - I
C
= 200
:
A, R
G
= 2 k
S
,
f = 1 kHz,
)
f = 200 Hz
F
10 dB
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht umgebende Luft
R
thA
420 K/W
2
)
Recommended complementary NPN transistors
Empfohlene komplementre NPN-Transistoren
BCW 31, BCW 32
Marking Stempelung
BCW 29 = C1
BCW 30 = C2
PDF 
ZIP