1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
2
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhltnis
#
2%
56
01.11.2003
2.
5
ma
x
1.
3
0
.
1
1.1
2.9
0.1
0.4
1
2
3
Type
Code
1.9
BCX 70
General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren fr die Oberflchenmontage
NPN
Power dissipation Verlustleistung
250 mW
Plastic case
SOT-23
Kunststoffgehuse
(TO-236)
Weight approx. Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Dimensions / Mae in mm
1 = B
2 = E
3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25
/
C)
Grenzwerte (T
A
= 25
/
C)
BCX 70
Collector-Emitter-voltage
B open
V
CE0
45 V
Collector-Base-voltage
E open
V
CB0
45 V
Emitter-Base-voltage
C open
V
EB0
5 V
Power dissipation Verlustleistung
P
tot
250 mW
1
)
Collector current Kollektorstrom (DC)
I
C
100 mA
Peak Collector current Kollektor-Spitzenstrom
I
CM
200 mA
Peak Base current Basis-Spitzenstrom
I
BM
200 mA
Junction temperature Sperrschichttemperatur
T
j
150
/
C
Storage temperature Lagerungstemperatur
T
S
- 65...+ 150
/
C
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
Collector-Base cutoff current Kollektorreststrom
I
E
= 0, V
CB
= 45 V
I
CB0
20 nA
I
E
= 0, V
CB
= 45 V, T
j
= 150
/
C
I
CB0
20
:
A
Emitter-Base cutoff current Emitterreststrom
I
C
= 0, V
EB
= 4 V
I
EB0
20 nA
Collector saturation volt. Kollektor-Sttigungsspg.
2
)
I
C
= 10 mA, I
B
= 0.25 mA
V
CEsat
50 mV
350 mV
I
C
= 50 mA, I
B
= 1.25 mA
V
CEsat
100 mV
550 mV
1
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhltnis
#
2%
2
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
57
01.11.2003
General Purpose Transistors
BCX 70
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
Base saturation voltage Basis-Sttigungsspannung
1
)
I
C
= 10 mA, I
B
= 0.25 mA
V
BEsat
600 mV
850 mV
I
C
= 50 mA, I
B
= 1.25 mA
V
BEsat
700 mV
1050 mV
DC current gain Kollektor-Basis-Stromverhltnis
1
)
V
CE
= 5 V, I
C
= 10
:
A
BCX 70G
h
FE
BCX 70H
h
FE
30
BCX 70J
h
FE
40
BCX 70K
h
FE
100
V
CE
= 5 V, I
C
= 2 mA
BCX 70G
h
FE
120
220
BCX 70H
h
FE
180
310
BCX 70J
h
FE
250
460
BCX 70K
h
FE
380
630
V
CE
= 1 V, I
C
= 50 mA
BCX 70G
h
FE
50
BCX 70H
h
FE
70
BCX 70J
h
FE
90
BCX 70K
h
FE
100
Base-Emitter voltage Basis-Emitter-Spannung
1
)
V
CE
= 5 V, I
C
= 10
:
A
V
BEon
520 mV
V
CE
= 5 V, I
C
= 2 mA
V
BEon
550 mV
650 mV
700 mV
V
CE
= 1 V, I
C
= 50 mA
V
BEon
780 mV
Gain-Bandwidth Product Transitfrequenz
V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
f
T
100 MHz
250 MHz
Collector-Base Capacitance Kollektor-Basis-Kapazitt
V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
C
CB0
1.7 pF
Emitter-Base Capacitance Emitter-Basis-Kapazitt
V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz
C
EB0
11 pF
Noise figure Rauschzahl
V
CE
= 5 V, I
C
= 200
:
A, R
G
= 2 k
S
,
f = 1 kHz,
)
f = 200 Hz
F
2 dB
6 dB
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht umgebende Luft
R
thA
420 K/W
2
)
Recommended complementary PNP transistors
Empfohlene komplementre PNP-Transistoren
BCX 71 series
Marking
Stempelung
BCX 70G = AG
BCX 70H = AH
BCX 70J = AJ
BCX 70K = AD
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