1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
2
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhltnis
#
2%
10
01.11.2003
4
3
2
1
3
0.1
6.5
0.2
0.7
3.25
2.3
7
0
.
3
1.65
3.
5
0
.
2
BF 720, BF 722
High Voltage Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren fr die Oberflchenmontage
NPN
Power dissipation Verlustleistung
1.5 W
Plastic case
SOT-223
Kunststoffgehuse
Weight approx. Gewicht ca.
0.04 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Dimensions / Mae in mm
1 = B
2, 4 = C
3 = E
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25
/
C)
Grenzwerte (T
A
= 25
/
C)
BF 720
BF 722
Collector-Emitter-voltage
B open
V
CE0
300 V
250 V
Collector-Base-voltage
E open
V
CB0
300 V
250 V
Emitter-Base-voltage
C open
V
EB0
5 V
Power dissipation Verlustleistung
P
tot
1.5 W
1
)
Collector current Kollektorstrom (dc)
I
C
100 mA
Peak Collector current Kollektor-Spitzenstrom
I
CM
200 mA
Peak Base current Basis-Spitzenstrom
I
BM
100 mA
Junction temperature Sperrschichttemperatur
T
j
150
/
C
Storage temperature Lagerungstemperatur
T
S
- 65...+ 150
/
C
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
Collector-Base cutoff current Kollektorreststrom
I
E
= 0, V
CB
= 200 V
I
CB0
10 nA
I
E
= 0, V
CB
= 200 V, T
j
= 150
/
C
I
CB0
10
:
A
Emitter-Base cutoff current Emitterreststrom
I
C
= 0, V
EB
= 5 V
I
EB0
50 nA
Collector saturation volt. Kollektor-Sttigungsspg.
2
)
I
C
= 30 mA, I
B
= 5 mA
V
CEsat
600 mV
1
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhltnis
#
2%
2
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
11
01.11.2003
High Voltage Transistors
BF 820, BF 822
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
DC current gain Kollektor-Basis-Stromverhltnis
1
)
V
CE
= 20 V, I
C
= 25 mA
h
FE
50
Gain-Bandwidth Product Transitfrequenz
V
CE
= 20 V, I
C
= 25 mA, f = 100 MHz
f
T
50 MHz
Collector-Base Capacitance Kollektor-Basis-Kapazitt
V
CB
= 30 V, I
E
= i
e
= 0, f = 1 MHz
C
CB0
1.6 pF
Thermal resistance Wrmewiderstand
junction to ambient air Sperrschicht zu umgebender Luft
R
thA
87 K/W
2
)
junction to soldering point Sperrschicht zu Ltpad
R
thS
27 K/W
Recommended complementary PNP transistors
Empfohlene komplementre PNP-Transistoren
BF 721, BF 723
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