1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
18
01.11.2003
2.
5
ma
x
1.
3
0
.
1
1.1
2.9
0.1
0.4
1
2
3
Type
Code
1.9
BSV 52
Switching Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren fr die Oberflchenmontage
NPN
Power dissipation Verlustleistung
250 mW
Plastic case
SOT-23
Kunststoffgehuse
(TO-236)
Weight approx. Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Dimensions / Mae in mm
1 = B
2 = E
3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25
/
C)
Grenzwerte (T
A
= 25
/
C)
BSV 52
Collector-Emitter-voltage
B open
V
CE0
12 V
Collector-Base-voltage
E open
V
CB0
20 V
Emitter-Base-voltage
C open
V
EB0
5 V
Power dissipation Verlustleistung
P
tot
250 mW
1
)
Collector current Kollektorstrom (dc)
I
C
100 mA
Peak Collector current Kollektor-Spitzenstrom
I
CM
200 mA
Peak Base current Basis-Spitzenstrom
I
BM
100 mA
Junction temp. Sperrschichttemperatur
T
j
150
/
C
Storage temperature Lagerungstemperatur
T
S
- 65...+ 150
/
C
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
Collector-Base cutoff current Kollektorreststrom
I
E
= 0, V
CB
= 20 V
I
CB0
400 nA
I
E
= 0, V
CB
= 20 V, T
j
= 125
/
C
I
CB0
30
:
A
Emitter-Base cutoff current Emitterreststrom
I
C
= 0, V
EB
= 4 V
I
EB0
100 nA
Collector saturation volt. Kollektor-Sttigungsspg.
1
)
I
C
= 10 mA, I
B
= 0.3 mA
V
CEsat
300 mV
I
C
= 10 mA, I
B
= 1 mA
V
CEsat
250 mV
I
C
= 50 mA, I
B
= 5 mA
V
CEsat
400 mV
1
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhltnis
#
2%
2
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
19
01.11.2003
Switching Transistors
BSV 52
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
Base saturation voltage Basis-Sttigungsspannung
1
)
I
C
= 10 mA, I
B
= 1 mA
V
BEsat
700 mV
850 mV
I
C
= 50 mA, I
B
= 5 mA
V
BEsat
1.2 V
DC current gain Kollektor-Basis-Stromverhltnis
1
)
V
CE
= 1 V, I
C
= 1 mA
h
FE
25
V
CE
= 1 V, I
C
= 10 mA
h
FE
40
120
V
CE
= 1 V, I
C
= 50 mA
h
FE
25
Gain-Bandwidth Product Transitfrequenz
V
CE
= 10 V, I
C
= 10 mA, f = 100 MHz
f
T
400 MHz
500 MHz
Collector-Base Capacitance Kollektor-Basis-Kapazitt
V
CB
= 5 V, I
E
= i
e
= 0, f = 1 MHz
C
CB0
4 pF
Emitter-Base Capacitance Emitter-Basis-Kapazitt
V
EB
= 1 V, I
C
= i
c
= 0, f = 1 MHz
C
EB0
4.5 pF
Switching times Schaltzeiten
turn-on time
I
Con
= 10 mA
I
Bon
= 3 mA
- I
Boff
= 1.5 mA
t
on
10 ns
delay time
t
d
4 ns
rise time
t
r
6 ns
turn-off time
t
off
20 ns
storage time
t
s
10 ns
fall time
t
f
10 ns
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht umgebende Luft
R
thA
420 K/W
2
)
Marking - Stempelung
BSV 52 = B2
PDF 
ZIP