ChipFind - документация

Электронный компонент: DB302

Скачать:  PDF   ZIP
FEATURES
Data Sheet No. BRDB-300-1C
MECHANICAL SPECIFICATION
Tel.: (310) 767-1052 Fax: (310) 767-7958
DIOTEC ELECTRONICS CORP.
Gardena, CA 90248 U.S.A
18020 Hobart Blvd., Unit B
ACTUAL SIZE
"!$#%
&"'
()
01
2
34
5768
9@$AB
CD
EGF
HIP
QSRRUT
VXWY
`W"acbd
e"ef
gg
hip
q
rUs
t
uUv
w
xy
"
""c
""
dGegfih
jjkh
fmldndlporq
s
tvuGwxdy
zi{
|
}i~
3 AMP SILICON BRIDGE RECTIFIERS
Case:
Terminals: Round silver plated copper pins
Soldering: Per MIL-STD 202 Method 208 guaranteed
Polarity: Marked on top of case; positive lead at beveled corner
Mounting Position: Any. Thru hole provided for #6 screw (NOTE 1)
Weight: 0.13 Ounces (3.6 Grams)
Molded Epoxy (UL Flammability Rating 94V-0)
MECHANICAL DATA
BH
LL
LD
D1
D1
BL
BL
+
_
DT
DB306
SERIES DB300-DB310
+
_
UL RECOGNIZED - FILE #E124962
E13
PRV Ratings from 50 to 1000 Volts
Surge overload rating to 60 Amps peak
Reliable low cost molded epoxy construction
Ideal for printed circuit board applications
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
"
k
k
"
"
"
k
PARAMETER (TEST CONDITIONS)
Maximum DC Blocking Voltage
Maximum Peak Recurrent Reverse Voltage
Working Peak Reverse Voltage
Series Number
V
i
V
V
d
V
SYMBOL
RMS Reverse Voltage
rgrgrgrrrr
UNITS
VOLTS
ϳгѳճ׳ٳ۳ݳ߳U
U
UU
RATINGS
Average Forward Rectified Current
Peak Forward Surge Current.
Tc = 60 C
Single 60Hz Half-Sine Wave
Superimposed on Rated Load (JEDEC Method).
Junction Operating and Storage Temperature Range
T
, T
!#"
I
$
Thermal Energy (Rating for Fusing) t < 8.3mSec
I t
%
I
&('0)
@ T = 60
(Note 2)
1
2
C
@ T = 25 C (Note 3)
3
4
C
5
6687
9A@CB#6D
AMPS
E#F
AMPS
G
SEC
HI
P
Q
V
RTS
C
U
Maximum Forward Voltage (Per Diode) at 1.5 Amps DC
Typical Junction Capacitance (Note 4)
Typical Thermal Resistance
R
VXW`Y
R
aXb(c
Maximum Reverse Current at Rated V
dCe
@ T = 25 C
f
g
@T = 125 C
h
i
I
pCq
Minimum Insulation Breakdown Voltage (Circuit to Case)
V
r
st
Junction to Ambient (Note 3)
Junction to Case (Note 2)
pF
uwv
xy
T00
wTu0v
x
C
VOLTS
A
d
C/W
e
f
g
hig
e
j
k
lwmonpTqCrts
u
viw(xXy
zi{X|
}
~0xiC
z}
}
y
}
xXwz
|
Cy
xoxiX~{
z
C{X|
}
~Xw~xiz
}
0X|
w
xi|XC}
8
zz
|
|
s
viw#|
}
~X0xiX
z
~CxX0
#X
C
u
u
#z
X}
s
u
X
C
vy
o}
X8Xy
z
s
viw#|
}
~X0xiX
z
~CxXiw#xX|
~
#s
v
s
vi
X|
~0
ziu
C0 `~CXy
}
~|
|
wxiy
z
0x
wxiy
z
w
w
0
0
#i
X
ii
w
X0
0
RoHS COMPLIANT
RATING & CHARACTERISTIC CURVES FOR SERIES DB300 - DB310
Data Sheet No. BRDB-300-2C
Tel.: (310) 767-1052 Fax: (310) 767-7958
DIOTEC ELECTRONICS CORP.
Gardena, CA 90248 U.S.A
18020 Hobart Blvd., Unit B
3
1
0
2
4
5
0
50
100
150
FIGURE 1. FORWARD CURRENT DERATING CURVE
Temperature, C
A
verage Forward Current, Io
(Amperes)
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
Number of Cycles at 60 Hz
Peak Forward Surge Current
(Amperes)
X`
`
`
(
`
`
X
3 AMP SILICON BRIDGE RECTIFIERS
NOTE 2
E14
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
Instantaneous Forward Voltage (Volts)
Inst
ant
aneous Forward Current
Amperes
0.4
0.6
08
1.0
1.2
1.4
1.6
1.8
0.01
0.1
1.0
NOTE 3
NOTES
(1) Case Temperature, T
With Bridge Mounted on 4" Sq. x 0.11" Thick
(10.5cm Sq. x 0.3cm) Aluminum Plate
Ambient Temperature, T
With Bridge Mounted on PC Board With
0.5" Sq. (12mm Sq.) Pads and Lead Length of 0.375" (9.5mm)
(2) T = 60 C
(3) T = 25 C; Pulse Width = 300 Sec; 1% Duty Cycle
C
m
(4) T = 25 C; f = 1 MHz; Vsig = 50mVp-p
Inst
ant
aneous Reverse Current, I
(Microamperes)
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
Percent of Rated Peak Reverse Voltage
0
.01
0.1
1.0
.1
10
50
40
Resistive and Inductive Loads
Case, Tc
NOTE 1
Ambient, T
A
Cap
acit
ance, pF
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
Reverse Voltage, (Volts)
X`
X
(
X`
NOTE 4
60Hz