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H
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Peak Forward Surge Current.
Tc = 60 C
P
Single 60Hz Half-Sine Wave
Superimposed on Rated Load (JEDEC Method).
I
Q
Continuous Power Dissipation in V
Region
@ T
=80 C (Heat Sink Temp)
R
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PARAMETER (TEST CONDITIONS)
Maximum DC Blocking Voltage
Maximum Peak Recurrent Reverse Voltage
Working Peak Reverse Voltage
Series Number
V
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RATINGS
FEATURES
Data Sheet No. BRDB-600-1D
ABDB-600-1D
MECHANICAL SPECIFICATION
Tel.: (310) 767-1052 Fax: (310) 767-7958
DIOTEC ELECTRONICS CORP.
Gardena, CA 90248 U.S.A
18020 Hobart Blvd., Unit B
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
ACTUAL SIZE
BL
14.7
15.7
0.58
0.62
BH
5.8
6.9
0.23
0.27
D1
10.3
11.3
0.405
0.445
LL
19.0
n/a
n/a
0.75
LD
1.0
1.1
0.039
0.042
SYM
MILLIMETERS
INCHES
MIN
MIN
MAX
MAX
6 AMP SILICON BRIDGE RECTIFIERS
Case:
Terminals: Round silver plated copper pins
Soldering: Per MIL-STD 202 Method 208 guaranteed
Polarity: Marked on side of case; positive lead at beveled corner
Mounting Position: Any. Through hole provided for #6 screw
Weight: 0.13 Ounces (3.6 Grams)
Molded Epoxy (UL Flammability Rating 94V-0)
MECHANICAL DATA
BH
LL
LD
D1
D1
BL
BL
+
_
+
_
DT
DB602
SERIES DB600 - DB610 and ADB604 - ADB608
UL RECOGNIZED - FILE #E124962
Junction Operating and Storage Temperature Range
T
, T
C
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pF
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01
2
Minimum Avalanche Voltage
Maximum Avalanche Voltage
V
3
46587@9BA
C
V
D
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V
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See Note 5
See Note 5
C
T
Maximum Forward Voltage (Per Diode) at 6 Amps DC
Typical Junction Capacitance (Note 4)
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Typical Thermal Resistance, Junction to Case (Note 2)
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VOLTS
Maximum Reverse Current at Rated V
w6x
@ T = 25 C
y
@T = 125 C
I
6
Minimum Insulation Breakdown Voltage (Circuit to Case)
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E25
BUILT-IN STRESS RELIEF MECHANISM FOR
SUPERIOR RELIABILITY AND PERFORMANCE
SURGE OVERLOAD RATING TO 250 AMPS PEAK
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)
RoHS COMPLIANT
RATING & CHARACTERISTIC CURVES FOR SERIES DB600 - DB610 and SERIES ADB604 - ADB608
Data Sheet No. BRDB-600-2D
ABDB-600-2D
Tel.: (310) 767-1052 Fax: (310) 767-7958
DIOTEC ELECTRONICS CORP.
Gardena, CA 90248 U.S.A
18020 Hobart Blvd., Unit B
6 AMP SILICON BRIDGE RECTIFIERS
u
E26
4.5
1.5
0
3.0
6.0
7.5
9.0
0
50
100
150
FIGURE 1. FORWARD CURRENT DERATING CURVE
Temperature, C
A
verage Forward Current, Io
(Amperes)
Resistive or Inductive Loads
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
Instantaneous Forward Voltage (Volts)
Inst
ant
aneous Forward Current
Amperes
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.01
0.1
1.0
u
u
NOTE 3
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS PER DIODE
Inst
ant
aneous Reverse Current, I
(Microamperes)
Percent of Rated Peak Reverse Voltage
0.1
1.0
10
100
100
uuQz%
%
`
nuQ`
nu`
Case, Tc
NOTE 1
60Hz
NOTES
(1) Case Temperature, T
With Bridge Mounted on 4"Sq. x 0.11" Thick
(10.5cm Sq. x 0.3cm) Aluminum Plate
(2) T = 150 C
(3) T = 25 C; Pulse Width = 300 Sec; 1% Duty Cycle
6
m
(4) T = 25 C; f = 1 MHz; Vsig = 50mVp-p
Cap
acit
ance, pF
NOTE 4
50 - 400V
600 - 1000V
Reverse Voltage, (Volts)
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
!!
Number of Cycles at 60 Hz
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
Peak Forward Surge Current
(Amperes)
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223
456
789
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NOTE 2
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