FEATURES
Data Sheet No. BRDB-800-1C
MECHANICAL SPECIFICATION
ACTUAL SIZE
E31
8 AMP SILICON BRIDGE RECTIFIERS
BH
LL
LD
D1
D1
BL
BL
+
_
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
!
"
#
$
%&
'
(
)
0
1
"
$
2
$
"
(
%3
4
2
5
6
7
8
2
4
#
)
'
4
!"
#
)
0
9
#
'
'
4
!"
#
)
2
)
'
@
A
6
B0
Average Forward Rectified Current
Peak Forward Surge Current. Single 60Hz Half-Sine Wave
Superimposed on Rated Load (JEDEC Method). T = 150 C
C
D
Junction Operating and Storage Temperature Range
T
E
, T
FHGI
I
P
C
Q
RRTS
UWVYX!R`
Continuous Power Dissipation in V
Region
@ T
=80 C (Heat Sink Temp)
a
bdcfe
ghpi
PARAMETER (TEST CONDITIONS)
Maximum DC Blocking Voltage
Maximum Peak Recurrent Reverse Voltage
Working Peak Reverse Voltage
Series Number
V
qrts
V
ududv
V
wTx
wdy
V
d
SYMBOL
dfegfhifjkmlnpoqsrt
AMPS
UNITS
VOLTS
P
udv
P
w
xyz|{H}~Hf|HHf
H
HHH
RMS Reverse Voltage
H
HHäH;аH
H
H
Power Dissipation in V
Region for 100 S Square Wave
Yf
Ydf
Yf
df
Yf
WATTS
Thermal Energy (Rating for Fusing)
I t
AMPS
SEC
I
@ T = 50 C (Note 1)
@T = 50 C (Note 2)
!
"
#%$
&
Typical Thermal Resistance
R
')(0
R
1)2%3
V
45
Maximum Forward Voltage (Per Diode) at 4 Amps DC
VOLTS
VOLTS
67
8
9A@@CBEDGF
@IH
PAQQCRESGT
QIU
VW
X
Minimum Avalanche Voltage
Maximum Avalanche Voltage
V
Y
`acbdfe
g
V
h
ipcqrEsut
Maximum Reverse Current at Rated V
vw
@ T = 25 C
x
y
@T = 125 C
I
Minimum Insulation Breakdown Voltage (Circuit to Case)
V
Junction to Ambient (Note 2)
Junction to Case (Note 1)
c
cc
d
e
A
fggg
h
C/W
ij
k
l
m
n
oun
p
q
r
sGtAuvwx
RATINGS
INCHES
MILLIMETERS
MIN
6.4
12.2
18.5
SYM
BL
BH
D1
MAX
MAX
7.6
13.2
19.6
MIN
0.73
0.25
0.48
0.77
0.3
0.52
LL
LD
1.2
1.3
0.048
0.052
0.875
22.2
n/a
n/a
+
_
SERIES DB800-DB810 and ADB804-ADB808
DT
DB804
yAz
{A|
UL RECOGNIZED - FILE #E124962
Tel.: (310) 767-1052 Fax: (310) 767-7958
DIOTEC ELECTRONICS CORP.
Gardena, CA 90248 U.S.A
18020 Hobart Blvd., Unit B
}
~uc
%
~~
%f}
~)%
%~)%
%
%%
u
}
%c
G%
%
u}
%
%
f
%
%u
%%
%%%u
%%
%
%G
%u
u%
%%
%
%)ƨ%Ǿ%u
Eu%
f%ƨ
%%ƨ
)
uȨ
ƨɪuu
%
ʵ%˪%u%
uuȪ
%u̻%
%%
u
%
u
)
%)%f
%ƨ%
u
uƨ
uf%%
%)E%
%%Ÿ
)%%
u%
ABDB-800-1C
BUILT-IN STRESS RELIEF MECHANISM FOR
SUPERIOR RELIABILITY AND PERFORMANCE
SURGE OVERLOAD RATING TO 400 AMPS PEAK
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)
Case:
Terminals: Round silver plated copper pins
Soldering: Per MIL-STD 202 Method 208 guaranteed
Polarity: Marked on side of case; positive lead at beveled corner
Mounting Position: Any. Through hole provided for #6 screw
Weight: 0.18 Ounces (5.4 Grams)
Molded Epoxy (UL Flammability Rating 94V-0)
MECHANICAL DATA
RoHS COMPLIANT
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
Cap
acit
ance, pF
)
)
Reverse Voltage, (Volts)
)
%
NOTE 4
RATING & CHARACTERISTIC CURVES FOR SERIES DB800 - DB810 and SERIES ADB804 - ADB808
Data Sheet No. BRDB-800-2C
Tel.: (310) 767-1052 Fax: (310) 767-7958
DIOTEC ELECTRONICS CORP.
Gardena, CA 90248 U.S.A
18020 Hobart Blvd., Unit B
8 AMP SILICON BRIDGE RECTIFIERS
)
E32
NOTES
FIGURE 1. FORWARD CURRENT DERATING CURVE
Temperature, C
A
verage Forward Current, Io
(Amperes)
60Hz Resistive or Inductive Loads
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
Instantaneous Forward Voltage (Volts)
Inst
ant
aneous Forward Current
Amperes
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.01
0.1
1.0
)
)
NOTE 3
Case
Ambient
NOTE 1
Inst
ant
aneous Reverse Current, I
(Microamperes)
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
Percent of Rated Peak Reverse Voltage
)
T = 100 C
T = 25 C
%
ABDB-800-2C
(1) Case Temperature, T
With Bridge Mounted on
4.9" x 4.3" x 0.11" Thick (12.4cm x 10.8cm x 0.3cm)
Aluminum Plate
Ambient Temperature, T
With
(2) T = 150 C
(3) T = 25 C; Pulse Width = 300 Sec; 1% Duty Cycle
Bridge Mounted on
PC Board With 0.5" Sq. (12mm Sq.) Copper Pads
And Bridge Lead Length of 0.375" (9.5mm)
(4) T = 25 C; f = 1 MHz; Vsig = 50mVp-p
m
150
100
50
0
0
2
4
6
8
10
12
Peak Forward Surge Current
(Amperes)
1
10
100
300
350
400
250
200
150
100
50
NOTE 2
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
Number of Cycles at 60 Hz
PDF 
ZIP