1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
20
2.
5
ma
x
1.
3
0
.
1
1.1
2.9
0.1
0.4
1
2
3
Type
Code
1.9
MMBT2222, MMBT2222A
Switching Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
NPN
Si-Epitaxial PlanarTransistoren fr die Oberflchenmontage
Version 2004-05-04
Power dissipation Verlustleistung
250 mW
Plastic case
SOT-23
Kunststoffgehuse
(TO-236)
Weight approx. Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Dimensions / Mae in mm
1 = B
2 = E
3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25C)
Grenzwerte (T
A
= 25C)
MMBT2222
MMBT2222A
Collector-Emitter-voltage
B open
V
CE0
30 V
40 V
Collector-Base-voltage
E open
V
CB0
60 V
75 V
Emitter-Base-voltage
C open
V
EB0
5 V
6 V
Power dissipation Verlustleistung
P
tot
250 mW
1
)
Collector current Kollektorstrom (dc)
I
C
600 mA
Junction temp. Sperrschichttemperatur
T
j
150C
Storage temperature Lagerungstemperatur
T
S
- 65...+ 150C
Characteristics (T
j
= 25C)
Kennwerte (T
j
= 25C)
Min.
Typ.
Max.
Collector-Base cutoff current Kollektorreststrom
I
E
= 0, V
CB
= 50 V
I
E
= 0, V
CB
= 60 V
MMBT2222
MMBT2222A
I
CB0
I
CB0
10 nA
10 nA
I
E
= 0, V
CB
= 50 V, T
j
= 150C
I
E
= 0, V
CB
= 60 V, T
j
= 150C
MMBT2222
MMBT2222A
I
CB0
I
CB0
10 A
10 A
Emitter-Base cutoff current Emitterreststrom
I
C
= 0, V
EB
= 3 V
MMBT2222A
I
EB0
100 nA
Collector saturation voltage Kollektor-Sttigungsspannung
1
)
I
C
= 150 mA, I
B
= 15 mA
MMBT2222
MMBT2222A
V
CEsat
V
CEsat
400 mV
300 mV
I
C
= 500 mA, I
B
= 50 mA
MMBT2222
MMBT2222A
V
CEsat
V
CEsat
1.6 V
1 V
1
) Tested with pulses t
p
= 300 s, duty cycle
2% Gemessen mit Impulsen t
p
= 300 s, Schaltverhltnis
2%
2
) MMBT2222: I
C
= 1 mA, MMBT2222A: I
C
= 10 mA
3
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
21
Switching Transistors
MMBT2222, MMBT2222A
Characteristics (T
j
= 25C)
Kennwerte (T
j
= 25C)
Min.
Typ.
Max.
Base saturation voltage Basis-Sttigungsspannung
1
)
I
C
= 150 mA, I
B
= 15 mA
MMBT2222
MMBT2222A
V
BEsat
V
BEsat
600 mV
1.3 V
1.2 V
I
C
= 500 mA, I
B
= 50 mA
MMBT2222
MMBT2222A
V
BEsat
V
BEsat
2.6 V
2 V
DC current gain Kollektor-Basis-Stromverhltnis
1
)
V
CE
= 10 V, I
C
= 0.1 mA
V
CE
= 10 V, I
C
= 1 mA
V
CE
= 10 V, I
C
= 10 mA
V
CE
= 10 V, I
C
= 150 mA
V
CE
= 1 V, I
C
= 150 mA
V
CE
= 10 V, I
C
= 500 mA
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
35
50
75
100
50
40
300
h-Parameters at V
CE
= 10V, f = 1 kHz, I
C
= 1 mA / 10 mA
2
)
Small signal current gain
Kleinsignal-Stromverstrkung
MMBT2222
MMBT2222A
h
fe
h
fe
50
75
300
375
Input impedance
Eingangs-Impedanz
MMBT2222
MMBT2222A
h
ie
h
ie
2 k
0.25 k
8 k
1.25 k
Output admittance
Ausgangs-Leitwert
MMBT2222
MMBT2222A
h
oe
h
oe
5 S
25 S
35 S
200 S
Gain-Bandwidth Product Transitfrequenz
V
CE
= 10 V, I
C
= 10 mA, f = 100 MHz
f
T
250 MHz
Collector-Base Capacitance Kollektor-Basis-Kapazitt
V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
C
CB0
4 pF
8 pF
Emitter-Base Capacitance Emitter-Basis-Kapazitt
V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz
C
EB0
20 pF
25 pF
Noise figure Rauschzahl
V
CE
= 10 V, I
C
= 100 A,
R
S
= 1 k
, f = 1 kHz
MMBT2222A
F
4 dB
Switching times Schaltzeiten
delay time
V
CC
= 30 V, - V
BE
= 0.5 V
I
C
= 150 mA, I
B1
= 15 mA
t
d
10 ns
rise time
t
r
25 ns
storage time
V
CC
= 30 V, I
C
= 150 mA
I
B1
= - I
B2
= 15 mA
t
s
225 ns
fall time
t
f
60 ns
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht umgebende Luft
R
thA
420 K/W
3
)
Recommended complementary PNP transistors
Empfohlene komplementre PNP-Transistoren
MMBT2907, MMBT2907A
Marking - Stempelung
MMBT2222 = (M)1B
MMBT2222A = 1P
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