1
) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gltig, wenn die Anschludrhte in 5 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden
28
TIP32, TIP32A ... C
General Purpose Transistors
PNP
Si-Epitaxial PlanarTransistors
PNP
Version 2004-06-29
Collector current Kollektorstrom
3 A
Plastic case
TO-220AB
Kunststoffgehuse
Weight approx. Gewicht ca.
2.2 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
1 = B 2 = C 3 = E
Standard packaging in tubes
Standard Lieferform in Stangen
Maximum ratings (T
A
= 25C)
Grenzwerte (T
A
= 25C)
TIP32
TIP32A
TIP32B
TIP32C
Collector-Emitter-voltage
B open
- V
CE0
40 V
60 V
80 V
100 V
Collector-Emitter-voltage
B shorted - V
CES
40 V
60 V
80 V
100 V
Emitter-Base-voltage
C open
- V
EB0
5 V
Power dissipation Verlustleistung
without cooling ohne Khlung
P
tot
2 W
1
)
with cooling mit Khlung
T
C
=25C P
tot
40 W
Collector current Kollektorstrom
- I
C
3 A (dc)
Peak Collector current
Kollektor-Spitzenstrom
- I
CM
5 A
Base current Basisstrom
- I
B
1 A
Junction temp. Sperrschichttemp.
T
j
150C
Storage temp. Lagerungstemperatur
T
S
- 65...+ 150C
Characteristics, T
j
= 25C
Kennwerte, T
j
= 25C
Min.
Typ.
Max.
Collector saturation volt. Kollektor-Sttigungsspannung
- I
C
= 3 A, - I
B
= 375 mA
- V
CEsat
1.2 V
Base-Emitter voltage Basis-Emitter-Spannung
- V
CE
= 4 V, - I
C
= 3 A
- V
BEon
1.8
DC current gain Kollektor-Basis-Stromverhltnis
- V
CE
= 4 V, - I
C
= 1 A
- V
CE
= 4 V, - I
C
= 3 A
h
FE
h
FE
25
10
50
1
) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gltig, wenn die Anschludrhte in 5 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden
29
General Purpose Transistors
TIP32, TIP32A ... C
Characteristics (T
j
= 25C)
Kennwerte (T
j
= 25C)
Min.
Typ.
Max.
Collector-Emitter cutoff current Kollektorreststrom
- V
CE
= 30 V
TIP32
TIP32A
- I
CE0
- I
CE0
300 nA
300 nA
- V
CE
= 60 V
TIP32B
TIP32C
- I
CE0
- I
CE0
300 nA
300 nA
- V
CE
= rated V
CE0
- I
CES
200 nA
h-Parameters at - V
CE
= 10 V, - I
C
= 0.5 A, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstrkung
h
fe
20
Gain-Bandwidth Product Transitfrequenz
- V
CE
= 10 V, - I
C
= 0.5 A, f = 1 MHz
f
T
3 MHz
Switching times Schaltzeiten
turn-on time
- I
Con
= 1 A,
- I
Bon
= I
Boff
= 100 mA
t
on
300 ns
turn-off time
t
off
1 s
Thermal resistance Wrmewiderstand
junction to ambient air Sperrschicht zu umgebender Luft
junction to case Sperrschicht zu Gehuse
R
thA
62 K/W
1
)
R
thC
3 K/W
Admissible torque for mounting
Zulssiges Anzugsdrehmoment
M 4
9 10% lb.in.
1 10% Nm
Recommended complementary NPN transistors
Empfohlene komplementre NPN-Transistoren
TIP31, TIP31A
TIP31B, TIP31C
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