FEATURES
Data Sheet No. BRDB-300-1C
ABDB-300-1C
MECHANICAL SPECIFICATION
Tel.: (310) 767-1052
Fax: (310) 767-7958
DIOTEC ELECTRONICS CORP.
Gardena, CA 90248
U.S.A
18020 Hobart Blvd., Unit B
ACTUAL SIZE
BL
14.7
15.7
0.58
0.62
BH
4.8
5.3
0.19
0.21
D1
10.3
11.3
0.405
0.445
LL
19.0
n/a
n/a
0.75
LD
0.7
0.9
0.028
0.035
SYM
MILLIMETERS
INCHES
MIN
MIN
MAX
MAX
Case: Molded plastic, U/L Flammability Rating 94V-0
Terminals: Round silver plated copper pins
Soldering: Per MIL-STD 202 Method 208 guaranteed (NOTE 1)
Polarity: Marked on top of case; positive lead at beveled corner
Mounting Position: Any. Thru hole provided for #6 screw (NOTE 2)
Weight: 0.13 Ounces (3.6 Grams)
MECHANICAL DATA
BH
LL
LD
D1
D1
BL
BL
+
_
DT
DB306
SERIES DB300-DB310 and ADB304-ADB308
+
_
UL RECOGNIZED - FILE #E124962
E13
PRV Ratings from 50 to 1000 Volts
Surge overload rating to 60 Amps peak
Reliable low cost molded plastic construction
Ideal for printed circuit board applications
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified. Single phase, 60Hz, resistive or inductive load. For capacitive loads, derate current by 20%.
Average Forward Rectified Current
Peak Forward Surge Current.
Tc = 60 C
O
Single 60Hz Half-Sine Wave
Superimposed on Rated Load (JEDEC Method).
Junction Operating and Storage Temperature Range
T
J
, T
STG
I
O
C
-55 to +150
Continuous Power Dissipation in V
Region
@ T
=80 C (Heat Sink Temp)
(BR)
HS
o
PARAMETER (TEST CONDITIONS)
Maximum DC Blocking Voltage
Maximum Peak Recurrent Reverse Voltage
Working Peak Reverse Voltage
Series Number
V
RWM
V
RRM
V
R (RMS)
V
RM
SYMBOL
ADB ADB ADB
DB
DB
DB
DB
DB
DB
DB
AMPS
UNITS
VOLTS
P
RM
P
R
304
306
308
300
301
302
304
306
308
310
1000
400
600
800
50
100
200
400
600
800
RMS Reverse Voltage
300
n/a
n/a
280
420
560
35
70
140
280
420
700
560
Power Dissipation in V
Region for 100 S Square Wave
(BR)
CONTROLLED
AVALANCHE
NON-CONTROLLED
AVALANCHE
1
WATTS
Thermal Energy (Rating for Fusing) t < 8.3mSec
I t
2
15
AMPS
2
SEC
I
FSM
60
@ T = 60
(Note 2)
C
o
C
@ T = 25 C (Note 3)
A
o
3
2
VOLTS
pF
n/a
n/a
Minimum Avalanche Voltage
Maximum Avalanche Voltage
V
(BR) Min
V
(BR) Max
RATINGS
V
FM
See Note 5
See Note 5
C
J
Maximum Forward Voltage (Per Diode) at 1.5 Amps DC
Typical Junction Capacitance (Note 4)
0.95 (Typical < 0.9)
21
Typical Thermal Resistance
R
JA
R
JC
VOLTS
Maximum Reverse Current at Rated V
RM
@ T = 25 C
A
o
@T = 125 C
A
o
I
RM
Minimum Insulation Breakdown Voltage (Circuit to Case)
V
ISO
Junction to Ambient (Note 3)
Junction to Case (Note 2)
1
50
A
2500
o
C/W
3.01 03db
NOTES:
(1) Bolt bridge on heat sink
silicon thermal compound between bridge and mounting surface for maximum heat transfer.
(2) Bridge mounted on 4.0" sq. x 0.11" thick (10.5cm sq. x 0.3cm) aluminum plate
(3) Bridge mounted on PC Board
0.375" (9.5mm)
(4) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(5) These bridges exhibit the avalanche characteristic at breakdown. If your application requires a specific breakdown voltage range, please contact us.
with #6 screw, using
with 0.5" sq. (12mm sq.) copper pads and bridge lead length of
RATING & CHARACTERISTIC CURVES FOR SERIES DB300 - DB310 and SERIES ADB304 - ADB308
Data Sheet No. BRDB-300-2C
Tel.: (310) 767-1052
Fax: (310) 767-7958
DIOTEC ELECTRONICS CORP.
Gardena, CA 90248
U.S.A
18020 Hobart Blvd., Unit B
Temperature, C
o
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
Number of Cycles at 60 Hz
1
10
100
60
50
40
30
20
10
3 AMP SILICON BRIDGE RECTIFIERS
4.97bbrwb200
NOTE 2
E14
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
Instantaneous Forward Voltage (Volts)
0.01
0.1
1.0
10
NOTE 3
NOTES
(1) Case Temperature, T
With Bridge Mounted on 4" Sq. x 0.11" Thick
(10.5cm Sq. x 0.3cm) Aluminum Plate
Ambient Temperature, T
With Bridge Mounted on PC Board With
0.5" Sq. (12mm Sq.) Pads and Lead Length of 0.375" (9.5mm)
(2) T = 60 C
(3) T = 25 C; Pulse Width = 300 Sec; 1% Duty Cycle
C,
A,
C
J
o
o
(4) T = 25 C; f = 1 MHz; Vsig = 50mVp-p
J
o
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
Percent of Rated Peak Reverse Voltage
.01
0.1
1.0
10
50
100
120
140
T = 25 C
J
o
T = 125 C
J
o
20
60
80
Resistive and Inductive Loads
Case, Tc
NOTE 1
Ambient, T
A
ABDB-300-2C
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
Reverse Voltage, (Volts)
5
10
1
100
10
0.1
100
NOTE 4
60Hz
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