PIN NAMES
A0 - A19
Address
DQ0 - DQ15 Data In/Data Out
CE0, CE1
Low Chip Enables
WE
Write Enable
OE
Output Enable
WP
Write Protect
RP
Reset/Power Down
BYTE
Byte Enable
RY/BY
Ready/Busy
V
DD
Power Supply (+3.3V)
V
SS
Ground
N.C.
No Connect
DESCRIPTION:
The DP3Z4MX16PMTY5 / DP3Z4MX16PMBY5 is a 64
megabit 3.3 volt only CMOS Flash EEPROM (Electrically
In-System Programmable and Erasable ROM Memory)
stack. These stacks are constrcted of four 1M x 16
FLASH EEPROM's that are configured as a 4M x 16.
The module features high speed access times with common
data inputs and putputs. The flash devices used in this module
also features BGO (Blank Ground Operations). This feature
allows Program or Erase operations to be performed on one
bank of the deice while a read operation is performed on the
other bank.
FEATURES:
Organizations Available: 4M x 16
Fast Read Access Times: 80ns (V
DD
=3.3 + 0.3V)
90ns (V
DD
2.7~3.6V)
Industrial Temperature:
-40
o
C to + 85
o
C
Low Power:
70 mA Maximum active (16 bit Mode)
20
A Maxinum Standby (CMOS)
100K Program / Erase Sysles
3.3 Volt Only In-System Programming
Package: 56-Pin TSOP Stack
30A243-04
REV. B 5/02
This document contains information on a product presently under development at DPAC Technologies Corp.
DPAC reserves the right to change products or specifications herein without prior notice.
64 Megabit 3.3 Volt CMOS FLASH EEPROM
DP3Z4MX16PMTY5 / DP3Z4MX16PMBY5
P
R
E
L
I
M
I
NAR
Y
DM
CAS
WE
DQ0-DQ3
CS0
RAS
CK
DQS
CS1
CK
A0-A11
VREF
CKE1
CKE0
BA0-BA1
*QFC
(8 Meg x 4 Bi
ts x 4 Banks)
128 Mb DDR SDRAM
(8 Meg x 4 Bi
ts x 4 Banks)
1
PIN-OUT DIAGRAM
FUNCTIONAL BLOCK DIAGRAM
ADVAN C E D C O M P O N E NTS PAC K AG I N G
1
2
3
4
13
14
15
16
24
23
22
21
20
19
43
42
41
40
39
38
37
36
35
34
33
32
31
29
30
44
48
49
50
51
52
53
54
A8
A10
A12
A15
VSS
N.C.
DQ11
A13
DQ2
DQ3
VDD
DQ12
DQ13
DQ14
DQ15/A-1
A4
A3
A2
A1
A0
N.C.
N.C.
N.C.
N.C.
CE3
CE2
CE1
CE0
VSS
DQ8
A6
A5
A7
A18
RY/BY
WP
WE
A9
A11
(TOP VIEW)
10
9
12
11
6
5
8
7
A19
A17
55
47
56
DQ10
DQ1
DQ0
28
25
26
27
A16
N.C.
RP
DQ6
DQ5
N.C.
DQ4
BYTE
DQ9
46
A14
18
OE
45
DQ7
17
56 PIN TSOP STACK
DP
Y5
90
-
SPEED
MEMORY
PREFIX
3Z
4M
X
16
M
PACKAGE
MEMORY
DESIG
MEMORY
TYPE
MEMORY MODULE WITHOUT SUPPORT LOGIC
DEPTH
WIDTH
DESIG
P
MITSUBISHI FLASH
3.3 VOLT FLASH EEPROM
BOUT
x
BOTTOM BOOT BLOCK
16 MEGABIT BASED
90ns
GRADE
CI
CI
-40C to 85C
@ Industrial Temp.
Commercial Processed
B
T
TOP BOOT BLOCK
ORDERING INFORMATION
30A243-04
REV. B 5/01
2
TOP VIEW
SIDE VIEW
BOTTOM VIEW
END VIEW
.020 [.51]
.050 [1.27] TYP.
(.125 [3.18])
(.075 [1.91])
.045 (56X)
.205 [5.21] MAX.
1.000.012
.700.010
[25.4.30]
[17.28.25]
.020 [.51]
[1.14]
DPAC Technologies Products & Services for the Integration Age
7321 Lincoln Way, Garden Grove, CA 92841 Tel 714 898 0007 Fax 714 897 1772
www.dpactech.com Nasdaq: DPAC
2002 DPAC Technologies, all rights reserved. DPAC TechnologiesTM, Memory StackTM, System StackTM, CS StackTM, LP-StackTM are trademarks of DPAC Technologies Corp.
DP3Z4MX16PMTY5 / DP3Z4MX16PMBY5
64 Megabit 3.3 Volt CMOS FLASH EEPROM
P
R
E
L
I
M
I
NAR
Y
MECHANICAL DRAWING
PDF 
ZIP