DESCRIPTION:
The Memory StackTM series is a family of interchangeable memory devices. The 512 Mb, CMOS DDR Synchronous DRAM, Narrow
Rail assembly utilizes the space saving LP-StackTM technology to increase memory density. This stack is constructed with two
256Mb (64M x 4) DDR SDRAMs.
This 512 Mb LP-StackTM, has been designed to fit in the
same footprint as the 256Mb (64M x 4) DDR SDRAM
TSOPII monolithic. This allows system upgrade without
electrical or mechanical redesign, providing an alternative
low cost memory solution.
FEATURES:
Electrical characteristics meet semiconductor
manufacturers' datasheets
Memory organization:
(2) 256Mb Memory devices. Each device arranged
as 64M x 4 bits (16M x 4 bits x 4 banks)
Memory stack organization:
128M x 4 bits (32M x 4 bits x 4 banks)
JEDEC approved, 2 Rank stack pinout and footprint
(with 2 CSs and 2 CKEs)
Optimized for RDIMMs
IPC-A-610, class 2, manufacturing standards
Lead free manufacturing process
Package: 66-Pin TSOPII Narrow Rail stack
This document contains information on a product that is currently released to production at DPAC Technologies Corp.
DPAC reserves the right to change products or specifications herein without prior notice.
30A235-01
REV. B 2/03
512 Megabit Narrow Rail CMOS DDR SDRAM
DPDD128MX4WSANY5
1
ADVAN C E D C O M P O N E NTS PAC K AG I N G
FUNCTIONAL BLOCK DIAGRAM
DM
CAS
WE
DQ0-DQ3
CS0
(16M x 4 bits x 4 banks)
RAS
CK
DQS
CS1
CK
A0-A12
VREF
CKE1
CKE0
(16M x 4 bits x 4 banks)
BA0-BA1
256 Mb DDR SDRAM
PINOUT DIAGRAM
1
(TOP VIEW)
60
NC
VDD
1
2
54
NC
VDDQ
3
53
NC
4
52
VSSQ
DQ0
5
51
DQS
VSSQ
6
50
DNU
NC
7
49
VREF
8
48
VSS
VDDQ
9
47
NC
10
46
CK
DQ1
11
45
CK
VSSQ
12
44
CKE0
NC
13
43
CKE1
NC
14
42
A12
VDDQ
15
41
A11
NC
16
40
A9
NC
17
39
A8
VDD
18
38
A7
DNU
19
37
A6
NC
20
36
A5
WE
21
35
A4
CAS
22
34
VSS
RAS
23
59
NC
CS0
24
58
VSSQ
CS1
25
57
NC
BA0
26
56
DQ2
BA1
27
55
VDDQ
NC
NC
DM
NC
33
VDD
32
A3
31
A2
30
A1
29
A0
28
A10/AP
VDDQ
61
DQ3
62
NC
63
VSSQ
64
NC
65
VSS
66
PIN NAMES
A0-A12
Row Address:
A0-A12
Column Address:
A0-A9, A11
BA0, BA1
Bank Select Address
A10/AP
Auto Precharge
DQ0-DQ3
Data In/Data Out
CAS
Column Address Strobe
CS0, CS1
Chip Selects
RAS
Row Address Strobe
WE
Data Write Enable
CK, CK
Differential Clock Inputs
CKE0, CKE1
Clock Enables
DQS
Data Strobe
DM
Data Mask
V
DD
Power Supply
V
SS
Ground
V
DDQ
DQ Power Supply
V
SSQ
DQ Ground
VREF
SSTL_2 Reference Voltage
NC
No Connect
DNU
Do Not Use
2
DPAC Technologies Products & Services for the Integration Age
7321 Lincoln Way, Garden Grove, CA 92841 Tel 714 898 0007 Fax 714 897 1772
www.dpactech.com Nasdaq: DPAC
2003 DPAC Technologies, all rights reserved. DPAC TechnologiesTM, Memory StackTM, System StackTM, LP-StackTM, CS-StackTM are trademarks of DPAC Technologies Corp.
DPDD128MX4WSANY5
512 Megabit Narrow Rail CMOS DDR SDRAM
30A235-01
REV. B 2/03
MECHANICAL DIAGRAM
1
.015 [.18]
.0256 [.65
.102 MAX
PIN 1
INDEX
TOP VIEW
SIDE VIEW
BOTTOM VIEW
END VIEW
.478
.891 MAX.
[12.14 ]
[22.63 MAX.]
[2.59 MAX]
TYP
TYP
-.002
+.006
+.15
-.05
Inch [mm]
Lead Toe-to-Toe per device datasheet
COPLANARITY:
.004 [.10] from seating plane
.463 [11.76] TYP
END VIEW DETAIL
ORDERING INFORMATION
DP
X
-
MFR
DOUBLE DATA RATE SYNCHRONOUS DRAM
PREFIX
DD 128M X
4
NY5
PACKAGE
MEMORY
DESIG
MEMORY
TYPE
MEMORY MODULE WITHOUT SUPPORT LOGIC
DEPTH
WIDTH
DESIG
W
256 MEGABIT BASED
STACKABLE TSOP, NARROW RAIL
MANUFACTURER CODE *
XX
-
MFR ID
SUPPLIER
DP
SUPPLIER CODE *
I/O TYPE
S
SSTL INPUTS/OUTPUTS
WIDTH
DEVICE
A
x8 MEMORY BASED
CLOCK
XX
SPEED
REV
REVISION NOT SPECIFIED
MANUFACTURER DIE REVISION
BLANK
X
XX
LATENCY
CAS
CAS LATENCY
CLOCK SPEED (ns)
* Contact your sales representative for supplier and manufacturer codes.
NOTES:
1. AC Parameters of base memory are unchanged from device manufacturers' specifications.
2. DC Parameters may be affected by stacking. Please refer to application note 53A004-00 for further information.
3. For assembly and inspection procedures, refer to application note 53A001-00.
4. Maximum reflow temperature recommendation is 215C.
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