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DCR604SE
FEATURES
s
Double Side Cooling
s
High Surge Capability
s
High Mean Current
s
Fatigue Free
APPLICATIONS
s
High Power Drives
s
High Voltage Power Supplies
s
DC Motor Control
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR604SE20
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
KEY PARAMETERS
V
DRM
2100V
I
T(AV)
706A
I
TSM
8100A
dVdt* 1000V/
s
dI/dt
700A/
s
*Higher dV/dt selections available
DCR604SE
Phase Control Thyristor
Advance Information
Supersedes January 2000 version, DS4450-4.0
DS4450-5.0 July 2001
DCR604SE21
DCR604SE20
DCR604SE19
DCR604SE18
DCR604SE17
Conditions
T
vj
= 0 to 125C,
I
DRM
= I
RRM
= 30mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Lower voltage grades available.
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
2100
2000
1900
1800
1700
Outline type code: E
See Package Details for further information.
Fig. 1 Package outline
2/8
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DCR604SE
CURRENT RATINGS
T
case
= 80C unless stated otherwise.
Symbol
Parameter
Conditions
Double Side Cooled
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Units
Max.
Half wave resistive load
562
A
-
882
A
-
770
A
Half wave resistive load
380
A
-
595
A
-
480
A
CURRENT RATINGS
T
case
= 60C unless stated otherwise.
Symbol
Parameter
Conditions
Double Side Cooled
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Units
Max.
Half wave resistive load
706
A
-
1109
A
-
995
A
Half wave resistive load
487
A
-
766
A
-
646
A
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DCR604SE
SURGE RATINGS
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 125
o
C
V
R
= 0
Max.
Units
Symbol
Parameter
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
0.33 x 10
6
A
2
s
8.1
kA
0.21 x 10
6
A
2
s
6.5
kA
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.074
Anode dc
Clamping force 8.0kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.018
Double side
-
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Clamping force
7.2
8.8
kN
55
125
o
C
-
On-state (conducting)
-
135
o
C
-
0.036
o
C/W
o
C/W
Cathode dc
-
0.092
o
C/W
Double side cooled
-
0.041
o
C/W
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DCR604SE
DYNAMIC CHARACTERISTICS
Parameter
Symbol
Conditions
I
RRM
/I
DRM
Peak reverse and off-state current
At V
RRM
/V
DRM
, T
case
= 125
o
C
From 67% V
DRM
to 1100A
Gate source 20V, 20
t
r
0.5
s, T
j
= 125
o
C
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% V
DRM
T
j
= 125
o
C. Gate open circuit.
Typ.
Max.
Units
-
30
mA
-
1000
V/
s
Repetitive 50Hz
-
350
A/
s
Non-repetitive
-
700
A/
s
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj
= 125
o
C
r
T
On-state slope resistance
At T
vj
= 125
o
C
t
gd
Delay time
I
L
Latching current
T
j
= 25
o
C, V
D
= 5V
I
H
Holding current
T
j
= 25
o
C, V
D
= 5V
0.93
-
V
-
0.667
m
-
1.5
s
V
D
= 67% V
DRM
, Gate source 10V, 5
t
r
= 0.5
s, T
j
= 25
o
C
-
500
mA
-
70
mA
I
T
= 500A, t
p
= 1ms, T
j
= 125C,
V
R
= 50V, dI
RR
/dt = 20A/
s,
V
DR
= 67% V
DRM
, dV
DR
/dt = 20V/
s linear
s
400
300
Turn-off time
t
q
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 5V, T
case
= 25
o
C
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DRM
= 5V, T
case
= 25
o
C
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage
At 67% V
DRM
T
case
= 125
o
C
V
FGM
Peak forward gate voltage
Anode positive with respect to cathode
V
FGN
Peak forward gate voltage
Anode negative with respect to cathode
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
Anode positive with respect to cathode
P
GM
Peak gate power
See table, gate characteristics curve
P
G(AV)
Mean gate power
3.0
V
150
mA
0.25
V
30
V
0.25
V
5
V
10
A
100
W
5
W
Max.
Units
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DCR604SE
CURVES
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Dissipation curves
0.5
1.0
1.5
2.0
Instantaneous on-state voltage, V
T
- (V)
0
400
800
1200
1600
Measured under pulse conditions
T
j
= 125C
Instantaneous on-state current, I
T
- (A)
200
600
1000
1400
0
200
400
600
800
Mean on-state current, I
T(AV)
- (A)
0
200
400
600
800
1000
1200
Mean power dissipation - (W)
d.c.
Half wave
3 phase
6 phase
V
TM
Equation:-
V
TM
= A + Bln (I
T
) + C.I
T
+D.
I
T
Where
A = 1.086551
B = 0.173031
C = 3.307461 x 10
5
D = 0.056345
these values are valid for T
j
= 125C for I
T
500A to 1600A
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DCR604SE
Fig.6 Maximum (limit) transient thermal impedance -
junction to case
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% V
RRM
at T
case
125C)
20
15
10
5
0
Peak half sine wave on-state current - (kA)
1
10
1
2 3 45
50
ms
Cycles at 50Hz
Duration
150
175
200
225
I
2
t value - (A
2
s x 10
3
)
I
2
t
I
2
t =
2
x t
2
10
20 30
0.1
0.01
0.001
Thermal Impedance - junction to case - (
C/W)
0.001
0.01
0.1
1.0
10
Time - (s)
Anode side cooled
Double side cooled
Conduction
Effective thermal resistance
Junction to case C/W
Double side
0.041
0.044
0.051
0.061
Anode side
0.074
0.077
0.084
0.093
d.c.
Halfwave
3 phase 120
6 phase 60
Fig.4 Recovered charge
Fig.5 Gate characteristics
10000
1000
100
Recovered charge, Q
R
- (
C)
0.1
1.0
10
100
Rate of decay of on-state current, dI
T
/dt - (A/s)
I
T
= 1500A
I
T
= 500A
Conditions:
T
j
= 125C
V
R
= 50V
t
p
= 1ms
0.25xI
RM
Q
R
t
p
I
T
dI
T
/dt
I
RM
10
1
0.1
0.01
0.001
Gate trigger current, I
GT
- (A)
100
10
1
0.1
Gate trigger voltage, V
GT
- (V)
100W
50W
20W
10W
5W
Region of certain
triggering
Upper
limit
95%
Lower limit 5%
T
j
= 125
C
T
j
= 25
C
T
j
= -40
C
V
GD
I
FGM
Table gives pulse power P
GM
in Watts
Pulse width
s
20
25
100
500
1ms
10ms
Frequency Hz
50
100
100
100
100
100
10
100
100
100
100
100
50
-
400
100
100
100
25
12.5
-
7/8
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DCR604SE
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes 3.6
0.1 x 2.0
0.1 deep
(One in each electrode)
15
14
Cathode
Anode
25nom.
42max
25nom.
30
15
1.5
Gate
Nominal weight: 82g
Clamping force: 8kN
10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outine type code: E
Cathode tab
8/8
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DCR604SE
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current
capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded
clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of `T' 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance
or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer
Services.
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2001 Publication No. DS4450-5 Issue No. 5.0 July 2001
TECHNICAL DOCUMENTATION NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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