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DCR820SG
www.dynexsemi.com
FEATURES
s
Double Side Cooling
s
High Surge Capability
APPLICATIONS
s
High Power Drives
s
High Voltage Power Supplies
s
DC Motor Control
s
Welding
s
Battery Chargers
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR820SG62
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
KEY PARAMETERS
V
DRM
6500V
I
T(AV)
387A
I
TSM
6000A
dVdt*
1000V/
s
dI/dt
100A/
s
*Higher dV/dt selections available
DCR820SG
Phase Control Thyristor
Supersedes October 2000 version, DS4214-5.1
DS4214-6.0 July 2001
6500
6400
6300
6200
6100
6000
DCR820SG65
DCR820SG64
DCR820SG63
DCR820SG62
DCR820SG61
DCR820SG60
Conditions
T
vj
= 0 to 125C,
I
DRM
= I
RRM
= 50mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
Respectively
Lower voltage grades available.
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
Outline type code: G.
See Package Details for further information.
Fig. 1 Package outline
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DCR820SG
CURRENT RATINGS
T
case
= 80C unless stated otherwise
Symbol
Parameter
Conditions
Double Side Cooled
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Units
Max.
Half wave resistive load
310
A
-
485
A
-
447
A
Half wave resistive load
204
A
-
321
A
-
279
A
CURRENT RATINGS
T
case
= 60C unless stated otherwise
Symbol
Parameter
Conditions
Double Side Cooled
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Units
Max.
Half wave resistive load
387
A
-
608
A
-
567
A
Half wave resistive load
260
A
-
408
A
-
357
A
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DCR820SG
www.dynexsemi.com
SURGE RATINGS
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 125
o
C
V
R
= 0
Max.
Units
Symbol
Parameter
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
180 x 10
3
A
2
s
6.0
kA
115 x 10
3
A
2
s
4.8
kA
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.064
Anode dc
Clamping force 12.0kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.008
Double side
-
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Clamping force
10.8
13.2
kN
55
150
o
C
-
On-state (conducting)
-
135
o
C
-
0.016
o
C/W
o
C/W
Cathode dc
-
0.064
o
C/W
Double side cooled
-
0.032
o
C/W
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DCR820SG
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 5V, T
case
= 25
o
C
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DRM
= 5V, T
case
= 25
o
C
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage
At V
DRM
T
case
= 125
o
C
V
FGM
Peak forward gate voltage
Anode positive with respect to cathode
V
FGN
Peak forward gate voltage
Anode negative with respect to cathode
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
Anode positive with respect to cathode
P
GM
Peak gate power
See Fig.8/9 Gate characteristics curves and table
P
G(AV)
Mean gate power
-
3.0
V
-
300
mA
-
0.25
V
-
30
V
-
0.25
V
-
5
V
-
10
A
-
100
W
-
5
W
Typ.
Max.
Units
DYNAMIC CHARACTERISTICS
Parameter
Symbol
Conditions
I
RRM
/I
DRM
Peak reverse and off-state current
At V
RRM
/V
DRM
, T
case
= 125
o
C
From 67% V
DRM
to 1000A,
Gate source 10V, 5
t
r
0.5
s. T
j
= 125
o
C.
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% V
DRM
T
j
= 125
o
C.
Min.
Max.
Units
-
50
mA
-
1000
V/
s
Repetitive 50Hz
-
50
A/
s
Non-repetitive
-
100
A/
s
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj
= 125
o
C
r
T
On-state slope resistance
At T
vj
= 125
o
C
t
gd
Delay time
I
L
Latching current
T
j
= 25
o
C, V
D
= 20V.
I
H
Holding current
T
j
= 25
o
C, V
D
= 5V, I
T
= 5A, I
TM
= 500A
1.6
-
V
-
3.5
m
-
3.3
s
V
D
= 67% V
DRM
, Gate source 20V, 10
Rise time 0.5
s, T
j
= 25
o
C
-
1
A
30
120
mA
I
T
= 500A, t
p
= 1ms, T
j
= 125C,
V
RM
= 100V, dI
RR
/dt = 10A/
s,
dV
DR
/dt = 25V/
s to 3000V
s
1200
500
Turn-off time
t
q
Q
S
Stored charge - triangular approximation
through I
RR
and 25% I
RR
I
T
= 320A, -dI
T
/dt = 6A/
s
600
1500
C
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DCR820SG
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CURVES
V
TM
Equation:-
V
TM
= A + Bln (I
T
) + C.I
T
+D.
I
T
Where
A = -0.759775
B = 0.639225
C = 0.004376
D = -0.092153
these values are valid for T
j
= 125C for I
T
100A to 1500A
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Maximum (limit) on-state characteristics
Instantaneous on-state voltage, V
T
- (V)
Instantaneous on-state current, I
T
- (A)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0
250
500
750
1000
1250
1500
T
j
= 125C
Instantaneous on-state voltage, V
T
- (V)
Instantaneous on-state current, I
T
- (A)
0
100
200
300
400
500
600
1
1.5
2.0
2.5
3
3.5
4
T
j
= 125C
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DCR820SG
Fig.4 Sine wave power dissipation curves
Fig.5 Sine wave power dissipation curves
Fig.6 Square wave power dissipation curves
Fig.7 Square wave power dissipation curves
Power loss - (W)
0
200
400
600
800
1000
1200
1400
1600
1800
2000
Mean on-state current, I
T(AV)
- (A)
0
50
100
150
200
250
300
350
400
180
120
90
60
30
15
Conduction angle
Mean on-state current, I
T(AV)
- (A)
Power loss - (W)
180
120
90
60
30
15
0
100
200
300
400
500
600
700
800
0
50
100
150
200
250
Conduction angle
Mean on-state current, I
T(AV)
- (A)
Power loss - (W)
D.C.
180
120
90
60
30
0
100
200
300
400
500
600
0
200
400
600
800
1000
1200
1400
1600
1800
2000
Conduction angle
Mean on-state current, I
T(AV)
- (A)
Power loss (W)
D.C.
180
120
90
60
30
0
100
200
300
400
500
600
700
800
0
50
100
150
200
250
300
350
Conduction angle
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DCR820SG
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Fig.8 Gate characteristics
Fig.9 Gate characteristics
Gate trigger current, I
GT
- (A)
Gate trigger voltage, V
GT
- (V)
0
1
2
3
4
5
6
7
8
9
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
T
j
= 125C
T
j
= 25C
T
j
= -40C
Preferred gate drive area
Upper limit
Lower limit
Pulse Width
s
100
200
500
1000
10000
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
Frequency Hz
Table gives pulse power P
GM
in Watts
Gate trigger current, I
GT
- (A)
Upper Limit
Lower Limit
5W
10W
20W
50W
100W
Gate trigger voltage, V
GT
- (V)
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
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DCR820SG
Fig.10 Stored charge
Fig.12 Surge (non-repetitive) on-state current vs time
(with 50% V
RRM
@ T
case
= 125C)
Fig.13 Maximum (limit) transient thermal impedance
- junction to case
Fig.11 Reverse recovery current
10000
1000
100
Total stored charge, Q
RA3
- (
C)
0.1
1.0
10
Rate of decay of on-state current, dI/dt - (A/
s)
100
I
RR
Q
RA3
I
T
dI/dt
Max
Min
Conditions:
T
j
= 125C
I
T
= 320A
V
R
= 100V
25% I
RR
1000
100
10
Peak reverse recovery current, I
RR
- (A)
0.1
1.0
10
Rate of decay of on-state current, dI/dt - (A/
s)
100
Max
Min
Conditions:
T
j
= 125C
I
T
= 320A
V
R
= 100V
1
10
5
10
1
50
Cycles at 50Hz
ms
Duration
0
5
7.5
10
Peak half sinewave on-state current - (kA)
12.5
0
0.05
I
2
t value for fusing - (A
2
s x 10
6
)
0.1
2.5
I
2
t
0.1
0.01
0.001
Thermal impedance - junction to case, Z
th(j-c)
- (
C/W)
0.001
0.01
0.1
1.0
10
Time - (s)
Anode side cooled
Double side
cooled
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective thermal resistance
Junction to case C/W
Double side
0.032
0.034
0.044
0.057
Single side
0.064
0.066
0.076
0.089
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DCR820SG
www.dynexsemi.com
Hole 3.6x2.0 deep (in both electrodes)
34 nom
27.0
25.4
1.5
Cathode
Gate
Anode
34 nom
58.5 max
Cathode tab
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
Nominal weight: 250g
Clamping force: 12kN
10%
Lead lenght: 420mm
Lead terminal connector: M4 ring
Package outline type code: G
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DCR820SG
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current
capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded
clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of `T' 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance
or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer
Services.
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2001 Publication No. DS4224-6 Issue No. 6.0 July 2001
TECHNICAL DOCUMENTATION NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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