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DCR840F
FEATURES
s
Double Side Cooling
s
High Surge Capability
s
Low Turn-on Losses
APPLICATIONS
s
High Power Converters
s
High Voltage Power Supplies
s
DC Motor Control
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR840F48
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
KEY PARAMETERS
V
DRM
4800V
I
T(AV)
840A
I
TSM
10,000A
dVdt*
1000V/
s
dI/dt
300A/
s
*Higher dV/dt selections available
DCR840F
Phase Control Thyristor
Preliminary Information
DS5521-1.1 February 2002
DCR840F48
DCR840F46
DCR840F44
DCR840F42
Conditions
T
vj
= 0 to 125C,
I
DRM
= I
RRM
= 100mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Lower voltage grades available.
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
4800
4600
4400
4200
Outline type code: F
See Package Details for further information.
Fig. 1 Package outline
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DCR840F
CURRENT RATINGS
T
case
= 80C unless stated otherwise.
Symbol
Parameter
Conditions
Double Side Cooled
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Units
Max.
Half wave resistive load
670
A
-
1050
A
-
940
A
Half wave resistive load
470
A
-
740
A
-
630
A
CURRENT RATINGS
T
case
= 60C unless stated otherwise.
Symbol
Parameter
Conditions
Double Side Cooled
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Units
Max.
Half wave resistive load
840
A
-
1320
A
-
1220
A
Half wave resistive load
610
A
-
950
A
-
830
A
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DCR840F
SURGE RATINGS
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 125
o
C
V
R
= 0
Max.
Units
Symbol
Parameter
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
0.78 x 10
6
A
2
s
12.5
kA
0.5 x 10
6
A
2
s
10
kA
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.038
Anode dc
Clamping force 19.5kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.004
Double side
-
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Clamping force
18.0
22.0
kN
55
125
o
C
-
On-state (conducting)
-
135
o
C
-
0.008
o
C/W
o
C/W
Cathode dc
-
0.052
o
C/W
Double side cooled
-
0.022
o
C/W
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DCR840F
DYNAMIC CHARACTERISTICS
Parameter
Symbol
Conditions
Typ.
Max.
Units
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 5V, T
case
= 25
o
C
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DRM
= 5V, T
case
= 25
o
C
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage
At 67% V
DRM
T
case
= 125
o
C
3.5
V
200
mA
0.25
V
Max.
Units
I
RRM
/I
DRM
Peak reverse and off-state current
At V
RRM
/V
DRM
, T
case
= 125
o
C
From 67% V
DRM
to 1000A
Gate source 1.5A
t
r
= 0.5
s. T
j
= 125
o
C.
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% V
DRM
T
j
= 125
o
C.
-
100
mA
-
1000
V/
s
Repetitive 50Hz
-
150
A/
s
Non-repetitive
-
300
A/
s
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj
= 125
o
C
r
T
On-state slope resistance
At T
vj
= 125
o
C
t
gd
Delay time
1.3
-
V
-
0.92
m
-
1.8
s
V
D
= 67% V
DRM
, Gate source 30V, 15
Rise time 0.5
s, T
j
= 25
o
C
I
T
= 1000A, t
p
= 1ms, T
j
= 125C,
V
RM
= 50V, dI
RR
/dt = 10A/
s,
V
DR
= 50% V
DRM
, dV
DR
/dt = 20V/
s linear
s
-
600
Turn-off time
t
q
I
L
Latching current
T
j
= 25
o
C, V
D
= 5V
I
H
Holding current
T
j
= 25
o
C, R
g-k
=
-
1000
mA
-
500
mA
V
FGM
Peak forward gate voltage
Anode positive with respect to cathode
V
FGN
Peak forward gate voltage
Anode negative with respect to cathode
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
Anode positive with respect to cathode
P
GM
Peak gate power
See table, gate characteristics curve
P
G(AV)
Mean gate power
30
V
0.25
V
5
V
30
A
150
W
10
W
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DCR840F
CURVES
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Dissipation curves
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
3.8
4.2
Instantaneous on-state voltage, V
T
- (V)
Instantaneous on-state current, I
T
- (A)
Maximum
Minimum
T
j
= 125C
0
500
1000
1500
2000
2500
0
100
200
300
400
500
600
700
800
900 1000
Mean on-state current, I
T(AV)
- (A)
Mean power dissipation - (W)
1/2 wave
dc
3 phase
6 phase
V
TM
Equation:-
V
TM
= A + Bln (I
T
) + C.I
T
+D.
I
T
Where
A = 6.698580464
B = 1.571103736
C = 0.001210868
D = 0.239948957
these values are valid for T
j
= 125C for I
T
300A to 3000A
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DCR840F
Fig.4 Recovered charge
Fig.5 Reverse recovery current
100
1000
10000
1
10
100
Rate of rise of on-state current, dI/dt - (A/s)
Reverse recovery charge, Q
rr
- (
C)
Maximum
Minimum
10
100
1000
1
10
100
Rate of rise of on-state current, dI/dt - (A/s)
Reverse recovery current, I
rr
- (A)
Maximum
Minimum
Fig.6 Gate characteristics
10
1
0.1
0.01
0.001
Gate trigger current, I
GT
- (A)
100
10
1
0.1
Gate trigger voltage, V
GT
- (V)
100
W
50W
20W
10W
5W
Region of certain
triggering
Upper limit 95%
Lower limit 5%
T
j
= 125
C
T
j
= 25
C
T
j
= -40
C
V
GD
100
200
500
1ms
10ms
Frequency Hz
50
150
150
150
150
20
100
150
150
150
50
-
400
150
125
100
25
-
Pulse width
s
Table gives pulse power P
GM
in Watts
Fig.6 Transient thermal impedance - junction to case
0.1
0.01
0.001
Thermal Impedance - Junction to case - (
C/W)
0.001
0.01
0.1
1.0
10
Time - (s)
Anode side cooled
Double side cooled
Conduction
Effective thermal resistance
Junction to case C/W
Double side
0.022
0.024
0.026
0.027
Anode side
0.038
0.040
0.042
0.043
d.c.
Halfwave
3 phase 120
6 phase 60
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DCR840F
Fig.7 Sub-cycle surge currents
Fig.8 Multi-cycle surge currents
5
10
15
20
25
30
Peak half sine on-state current - (kA)
0
0.2
0.4
0.6
0.8
1.0
1.2
I
2
t value - (A
2
s x 10
6
)
1
10
Pulse length, half sine wave - (ms)
9
8
7
6
5
4
3
2
I
TSM
(V
R
= 0)
I
TSM
(V
R
= 50% V
RRM
)
I
2
t (V
R
= 0)
I
2
t (V
R
= 50% V
RRM
)
0
2
4
6
8
10
12
14
Peak half sine wave on-state current - (kA)
Number of cycles @ 50Hz
0
10
20
30
40
50
60
Surge current (V
R
= 0)
Surge current (V
R
= 50% V
RRM
)
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DCR840F
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Hole 3.6x2.0 deep (in both electrodes)
48 nom
27.0
25.4
1.5
Cathode
Gate
Anode
48 nom
76 max
Nominal weight: 450g
Clamping force: 19.5kN 10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: F
Cathode tab
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DCR840F
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of `T' 23mm and `E' 30mm
discs, and bar clamps right up to 83kN for our `Z' 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
CUSTOMER SERVICE CENTRE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
Rest Of World Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2002 Publication No. DS5521-1 Issue No. 1.1 February 2002
TECHNICAL DOCUMENTATION NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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