DFB54
1/7
APPLICATIONS
s
Power Supplies
s
Freewheel Diode
s
Battery Chargers
s
D.C. Motor Control
s
Welding
s
Rectification
FEATURES
s
Double Side Cooling
s
High Surge Capability
s
Low Recovery Charge
VOLTAGE RATINGS
KEY PARAMETERS
V
RRM
3500V
I
F(AV)
2135A
I
FSM
20000A
Q
r
1500
C
t
rr
6.5
s
CURRENT RATINGS
Symbol
Parameter
Conditions
Double Side Cooled
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Units
Max.
Half wave resistive load, T
case
= 65
o
C
2135
A
T
case
= 65
o
C
3350
A
T
case
= 65
o
C
3060
A
Half wave resistive load, T
case
= 65
o
C
1320
A
T
case
= 65
o
C
2080
A
T
case
= 65
o
C
1810
A
3500
3400
3300
3200
3100
3000
DFB54 35
DFB54 34
DFB54 33
DFB54 32
DFB54 31
DFB54 30
Conditions
V
RSM
= V
RRM
+ 100V
Lower voltage grades available.
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
Outline type code: DO200AD.
See Package Details for further information.
DFB54
Fast Recovery Diode
Replaces March 1998 version, DS4219-2.4
DS4219-3.0 January 2000
DFB54
2/7
SURGE RATINGS
Conditions
Max.
Units
20.0
kA
2000 x 10
3
A
2
s
I
2
t for fusing
I
2
t
Surge (non-repetitive) forward current
I
FSM
Parameter
Symbol
10ms half sine; with 0% V
RRM,
T
j
= 150
o
C
16
kA
1280 x 10
3
A
2
s
I
2
t for fusing
I
2
t
Surge (non-repetitive) forward current
I
FSM
10ms half sine; with 50% V
RRM,
T
j
= 150
o
C
THERMAL AND MECHANICAL DATA
dc
Conditions
Max.
Units
o
C/W
-
0.025
Anode dc
Clamping force 44kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.003
Double side
-
Single side
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
-
0.006
o
C/W
o
C/W
Cathode dc
-
0.027
o
C/W
Double side cooled
-
0.013
o
C/W
T
stg
Storage temperature range
-55
150
o
C
kN
48.4
39.6
Clamping force
-
T
vj
Virtual junction temperature
Forward (conducting)
-
150
o
C
Min.
t
rr
100
Symbol
Typ.
Units
Parameter
V
FM
Forward voltage
I
RRM
Peak reverse current
Reverse recovery time
Q
RA1
Recovered charge (50% chord)
I
RM
Reverse recovery current
K
Soft factor
V
TO
Threshold voltage
r
T
Slope resistance
V
FRM
Forward recovery voltage
di/dt = 1000A/
s, T
j
= 125
o
C
-
-
V
At T
vj
= 150
o
C
-
0.32
m
At T
vj
= 150
o
C
-
1.15
V
-
-
-
-
450
A
-
1500
C
-
6.5
s
At V
RRM
, T
case
= 150
o
C
-
mA
At 1500A peak, T
case
= 25
o
C
-
1.7
V
Conditions
Max.
I
F
= 1000A, di
RR
/dt = 100A/
s
T
case
= 150
o
C, V
R
= 100V
CHARACTERISTICS
DFB54
3/7
DEFINITION OF K FACTOR AND Q
RA1
0.5x I
RR
I
RR
dI
R
/dt
t
1
t
2
Q
RA1
= 0.5x I
RR
(t
1
+ t
2
)
k = t
1
/t
2
CURVES
0
1000
2000
3000
4000
5000
Instantaneous forward current I
F
- (A)
0.5
1.0
1.5
2.0
2.5
Instantaneous forward voltage V
F
- (V)
Measured under pulse conditions
T
j
= 150C
T
j
= 25C
3.0
Fig.1 Maximum (limit) forward characteristics
DFB54
4/7
1
10
100
1000
Rate of rise of reverse current dI
R
/dt - (A/
s)
1000
100
10000
100000
Reverse recovered charge Q
S
- (
C)
Conditions:
T
j
= 150C,
V
R
= 100V
A: I
F
= 4000A
B: I
F
= 2000A
C: I
F
= 1000A
D: I
F
= 500A
E: I
F
= 200A
A
B
C
D
E
I
RR
QS
t
p
= 1ms
I
F
dI
R
/dt
Q
S
=
50
s
0
Fig.3 Recovered charge
0
100
200
300
400
500
Instantaneous forward current I
F
- (A)
0.8
1.0
1.2
1.4
1.6
Instantaneous forward voltage V
F
- (V)
Measured under
pulse conditions
T
j
= 150C
T
j
= 25C
Fig.2 Maximum (limit) forward characteristics
DFB54
5/7
1
10
100
1000
Rate of rise of reverse current dI
R
/dt - (A/
s)
100
10
1000
10000
Reverse recovery current I
RR
- (A)
Conditions:
T
j
= 150C,
V
R
= 100V
A: I
F
= 2000A
B: I
F
= 1000A
C: I
F
= 500A
D: I
F
= 200A
E: I
F
= 100A
A
B
D
E
C
Fig.4 Typical reverse recovery current vs rate of rise of reverse current
10
1
0.1
0.01
0.001
Time - (s)
0.1
0.01
0.001
0.0001
Thermal impedance - (C/W)
d.c. Double side Cooled
100
Fig.5 Maximum (limit) transient thermal impedance - junction to case - (C/W)
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