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DK13..FX
FEATURES
s
Low Switching Losses At High Frequency
s
Fully Characterised For Operation Up To 20kHz
APPLICATIONS
s
High Power Inverters And Choppers
s
UPS
s
AC Motor Drives
s
Induction Heating
s
Cycloconverters
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, then:-
Add K to type number for 1/2" 20 UNF thread, e.g. DK13 10FXK
or
Add M to type number for M12 thread, e.g. DK13 10FXM.
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
KEY PARAMETERS
V
DRM
1200V
I
T(RMS)
130A
I
TSM
1600A
dVdt
200V/
s
dI/dt
500A/
s
t
q
15
s
DK13..FX
Fast Switching Thyristor
Replaces January 2000 version, DS4411-2.0
DS4411-3.0 July 2001
Outline type code: TO94
See Package Details for further information.
Fig. 1 Package outline
DK13 12FX K or M
DK13 10FX K or M
Conditions
V
RSM
= V
RRM
+ 100V
I
DRM
= I
RRM
= 15mA
at V
RRM
or V
DRM
& T
vj
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
1200
1000
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DK13..FX
SURGE RATINGS
Conditions
t
p
10ms half sine; T
case
= 125
o
C
V
R
= 0% V
RRM
- 1/4 sine
Max.
Units
Symbol
Parameter
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
12.8 x 10
3
A
2
s
1.6
kA
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max.
Units
Symbol
Parameter
-
0.24
o
C/W
Thermal resistance - junction to case
R
th(j-c)
Mounting torque 15.0Nm
with mounting compound
0.08
-
o
C/W
Thermal resistance - case to heatsink
R
th(c-h)
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
-
Mounting torque
12.0
15.0
Nm
-40
150
o
C
-
On-state (conducting)
-
125
o
C
dc
CURRENT RATINGS
Symbol
Parameter
Conditions
Units
Max.
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
Half wave resistive load, T
case
= 80
o
C
83
A
T
case
= 80
o
C
130
A
MEASUREMENT OF RECOVERED CHARGE - Q
RA1
0.5x I
RR
I
RR
Q
RA1
t
p
= 1ms
I
TM
dI
R
/dt
Measurement of Q
RA1
: Q
RA1
= I
RR
x t
RR
2
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DK13..FX
DYNAMIC CHARACTERISTICS
V
TM
Parameter
Symbol
Conditions
Maximum on-state voltage
At 300A peak, T
case
= 25
o
C
I
RRM
/I
DRM
Peak reverse and off-state current
At V
RRM
/V
DRM
, T
case
= 125
o
C
Gate source 20V, 20
t
r
< 0.5
s, T
j
= 125C
dV/dt
Maximum linear rate of rise of off-state voltage
Linear to 60% V
DRM
T
j
= 125
o
C, Gate open circuit
Min.
Max.
Units
-
2.35
V
-
15
mA
-
200
V/
s
Repetitive 50Hz
-
500
A/
s
Non-repetitive
-
800
A/
s
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj
= 125
o
C
r
T
On-state slope resistance
At T
vj
= 125
o
C
1.5
-
V
-
2.83
m
Delay time
t
gd
-
5
s
Total turn-on time
t
(ON)TOT
-
3
s
T
j
= 25C, I
T
= 50A,
V
D
= 300V, I
G
= 1A,
dI/dt =50A/
s, dI
G
/dt = 1A/
s
*Typical value.
I
H
Holding current
T
j
= 25
o
C, I
TM
= 1A, V
D
= 12V
60*
-
mA
T
j
= 125C, I
T
= 100A, V
R
= 50V,
dV/dt = 200V/
s (Linear to 60% V
DRM
),
dI
R
/dt = 30A/
s, Gate open circuit
Turn-off time
t
q
15
-
s
t
q
code: X
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 12V, T
case
= 25
o
C, R
L
= 6
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DRM
= 12V, T
case
= 25
o
C, R
L
= 6
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage
At V
DRM
T
case
= 125
o
C, R
L
= 1k
-
3.0
V
-
200
mA
-
0.2
V
Typ.
Max.
Units
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
Anode positive with respect to cathode
P
GM
Peak gate power
P
G(AV)
Mean gate power
-
5.0
V
-
4
A
-
16
W
-
3.0
W
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DK13..FX
CURVES
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Gate characteristics
Fig.4 Typical recovered charge (for a device rated V
DRM
= 600V, t
q
= 10
s)
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DK13..FX
Fig.5 Transient thermal impedance - junction to case
Fig.6 Non-repetitive sub-cycle surge on-state current and I
2
t rating
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